SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. MAXIMUM RATINGS IC 0.64A VCB 36 V VCE 18 V PDISS 8 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 21.9 °C/W CHARACTERISTICS 1 = COLLECTOR 2 = BASE 3 = EMITTER TRANS1.SYM TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 18 V BVCES IC = 5 mA 36 V BVEBO IC = 1.0 mA 4.0 V ICBO VCE = 15 V HFE VCE = 5.0 V COB VCE = 15 V f = 1.0 MHz GPE VCE = 12.5 V f = 175 MHz η VCE = 12.5 V PPUT = 4.0 W f = 175 MHz VCC = 12.6 V PIN = 0.2 W f = 136 MHZ ZIN = 3.0 – j3.8 ZCL = 12.8 – j11 IMPEDANCE VCC = 12.6 V PIN = 0.2 W f = 155 MHZ ZIN = 4.0 – j2.0 ZCL = 11 – j14.8 VCC = 12.6 V PIN = 0.2 W f = 175 MHZ ZIN = 4.3 – j5.8 ZCL = 13 – j20 IC = 50 mA 10 .25 mA 100 --- 20 pf 12 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. Ω REV. B 1/1