HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 100 W/30 MHz • High linear power output • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System • 28 V CE operation E L C FULL R Ø.125 NOM. C B B E H E D G F I J MAXIMUM RATINGS K MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 IC 20 A VCBO 65 V VCEO 36 V E F .970 / 24.64 .980 / 24.89 VEBO 4.0 V G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 PDISS 270 W @ TC = 25 °C I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 TJ -65 °C to +200 °C K .980 / 24.89 1.050 / 26.67 TSTG -65 °C to +150 °C θJC 0.65 °C/W .125 / 3.18 B CHARACTERISTICS .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 .280 / 7.11 L ORDER CODE: ASI10608 TC = 25 °C NONETEST CONDITIONS SYMBOL C MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 35 V BVCES IC = 100 mA 65 V BVCBO IC = 100 mA 65 BVEBO IE = 10 mA 4.0 ICES VCE = 30 V hFE VCE = 5.0 V Cob VCB = 30 V GP VCE = 28 V IMD3 15 mA 10 200 --- f = 1.0 MHz --- 285 pF PPUT = 100 W 15 IC = 5.0 A PIN = 3.16 W f1 = 30.000 MHz ICQ = 100 mA V f2 = 30.001 MHz -34 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB 16 -30 dBc REV. D 1/2 HF100-28 ERROR! REFERENCE SOURCE NOT FOUND. TEST CIRCUIT SAFE OPERATING AREA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. D 2/2