140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT 4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN GROUNDED EMITTER CONFIGURATION DESCRIPTION: THE SD1127 IS A 12.5 VOLT SILICON NPN PLANAR TRANSISTOR DESIGNED FOR ECONOMICAL VHF COMMUNICATIONS. THE TRANSISTOR CHIP IS MOUNTED ON A BERYLLIUM OXIDE TAB TO ISOLATE THE COLLECTOR LEAD ALLOWING A GROUNDED EMITTER CONFIGURATION FOR HIGH GAIN AND EXCELLENT HEAT DISSIPATION. ABSOLUTE MAXIMUM RATINGS (Tcase = 25ºC) Symbol PDISS Parameter Total Power Dissipation * VCBO Collector-base Voltage VCEO Collector-emitter Voltage (IB=0) IC Collector Current * T STG Storage Temperature TJ Junction Temperature *At RF Conditions Value Unit 8.0 W 36 18 0.64 -65 to 200 200 V V A ºC ºC 21.9 °C/W Thermal Data RTH(J-C) Thermal Resistance Junction-case ) MSC0936.PDF 10-15-98 SD1127 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° 25° C) STATIC Symbol Bvceo Bvces Bvebo Cob HFE Test Conditions IC = 10 mA IC = 5 mA IE = 1 mA VCB=15V IC = 50 mA VCE=5V Min. Value Typ. Max. Unit 18 36 4.0 --5.0 ----------- ------0.25 --- V V V mA --- Min. Value Typ. DYNAMIC Symbol Test Conditions Max. Unit Pout f=175 MHz VCE=12.5V 4.0 --- --- W GP f=175 MHz VCE=12.5V 10 12 --- dB f=1 MHz VCE=15V --- --- 20 pF Cob IMPEDANCE DATA ZIN(Ω) FREQ 175 MHz PIN=0.2W 4.1- j 5.6 VCE=12.5V MSC0936.PDF 10-15-98 ZCL(Ω) 13.5- j 20.0 IE= 0 mA SD1127 PACKAGE MECHANICAL DATA 1. Collector 2. Base 3. Emitter MSC0936.PDF 10-15-98