ASI SD1899

SD1899
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1899 is a Common Base
Device Designed for class C
Applications.
PACKAGE STYLE .250 2L FG
FEATURES INCLUDE:
• Gold Metalization
• Input/Output Matching
• Diffused Ballast Resistors
MAXIMUM RATINGS
IC
3.8 A
VCBO
50 V
VCEO
25 V
PDISS
66 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
6.5 °C/W
CHARACTERISTICS
SYMBOL
1 = COLLECTOR
2 = EMITTER
3 = BASE
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 25 mA
50
V
BVEBO
IE = 10 mA
3.5
V
ICEO
VCE = 25 V
hFE
VCE = 8.0 V
IC = 400 mA
COB
PG
ηC
20
f = 1.0 MHz
VCC = 28 V
Pout = 30 W
f = 1.6 – 1.7 GHz
60
25
mA
100
--pF
24
7.0
8.2
40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
dB
%
REV. A
1/1