SRF820H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SRF820H is Designed for High Power Class C Amplifier applications, in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG 2 B PDISS TJ 30 V -65 °C to +200 °C inches / m m A .150 / 3.43 .160 / 4.06 1.25 °C/W CHARACTERISTICS .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 .725 / 18.42 J .970 / 24.64 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .980 / 24.89 .120 / 3.05 .135 / 3.43 .285 / 7.24 M 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER ORDER CODE: ASI10474 TC = 25 °C NONETEST CONDITIONS SYMBOL .045 / 1.14 C N θJC M A XIM UM inches / m m I 220 W @ TC = 25 °C L M INIM UM H 4.0 V -65 °C to +150 °C J I DIM B 60 V TSTG M K H 8.0 A VEBO 3 E .725/18,42 F G MAXIMUM RATINGS VCEO 2x ØN D • Internal Input Matching Network • PG = 8.4 dB at 70 W/400 MHz • Omnigold™ Metalization System • Available in matched pairs and quads VCBO 1 FU LL R FEATURES: IC A C 4 MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 30 V BVCBO IC = 50 mA 60 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 28 V PG POUT VCC = 28 V IC = 2.0 A 20 f = 1.0 MHz PIN = 70 W f = 400 MHz 8.4 70 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 80 --- 80 pF dB W REV. A 1/1