UHBS30-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-1 is Designed for Class C, FM Base Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° B C 2XØ.130 4X .025 R • Internal Input Matching Network • PG = 7.5 dB at 30 W/900 MHz • Omnigold™ Metalization System .115 .430 D E F .125 G H I MAXIMUM RATINGS J K IC 9.0 A VCBO 50 V VCEO 30 V VEBO 4.0 V PDISS 100 W @ TC = 25 °C -65 °C to +200 °C TJ TSTG -65 °C to +150 °C θJC 1.5°C/W CHARACTERISTICS MINIMUM inches / mm inches / mm A .355 / 9.02 .365 / 9.27 B .115 / 2.92 .125 / 3.18 C .075 / 1.91 .085 / 2.16 D .225 / 5.72 .235 / 5.97 E .090 / 2.29 .110 / 2.79 F .720 / 18.29 .730 / 18.54 G .970 / 24.64 .980 / 24.89 H .355 / 9.02 .365 / 9.27 I .004 / 0.10 .006 / 0.15 J .120 / 3.05 .130 / 3.30 K .160 / 4.06 .180 / 4.57 L .230 / 5.84 .260 / 6.60 MAXIMUM ORDER CODE: ASI10670 TC = 25 °C NONETEST CONDITIONS SYMBOL DIM L MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA BVCES IC = 50 mA BVEBO IE = 10 mA ICBO VCE = 15 V 5 mA ICES VCE = 24 V 10 mA hFE VCE = 5.0 V --- --- Cob VCB = 25 V 50 pF PG ηC VCE = 24 V RBE = 10 Ω IC = 1.0 A 30 V 50 V 4.0 V 10 f = 1.0 MHz POUT = 30 W f = 900 GHz 7.5 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. B 1/1