MRF326 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF326 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 8.5 dB at 40 W/400 MHz • Omnigold™ Metalization System 2x ØN FU LL R D B MAXIMUM RATINGS G IC 8.0 A VCBO 60 V VCEO 30 V VCES 60 V VEBO 4.0 V 140 W @ TC = 25 °C J -65 °C to +150 °C θJC 1.25 °C/W CHARACTERISTICS inche s / m m inche s / m m A .150 / 3.43 .160 / 4.06 M AX IM U M .045 / 1.14 C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 .725 / 18.42 I J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .120 / 3.05 .135 / 3.43 .285 / 7.24 N TC = 25 °C NONETEST CONDITIONS SYMBOL L M IN IM U M M TSTG I D IM B -65 °C to +200 °C TJ M K H H PDISS E .725/18,42 F MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 30 V BVCES IC = 50 mA 60 V BVEBO IE = 5.0 mA 4.0 V ICBO VCE = 30 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 28 V IC = 2.0 A 10 f = 1.0 MHz POUT = 40 W f = 400 MHz 8.5 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 80 --- 80 pF dB % REV. A 1/1