VHB10-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28F is an NPN RF power transistor designed for 138-175 MHz VHF communications applications. It utilizes emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45° • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System A E C Ø.125 NOM. FULL R J .125 B E C D MAXIMUM RATINGS IC 1.0 A VCBO 65 V VCEO VEBO E F I GH 35 V 4.0 V MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 .385 / 9.78 E PDISS 13.0 W @ TC = 25 ° C G .085 / 2.16 .105 / 2.67 TJ -65 °C to +200 °C H .160 / 4.06 .180 / 4.57 TSTG -65 °C to +150°C J .240 / 6.10 .255 / 6.48 θJC 13.5 °C/W .280 / 7.11 I CHARACTERISTICS ORDER CODE: ASI10721 TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 200 mA 65 V BVCES IC = 200 mA 65 V BVCEO IC = 200 mA 35 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 30 V PG ηC VCC = 28 V PIN = 1.0 W IC = 200 mA 5.0 f = 1.0 MHz POUT = 10 W f = 175 MHz 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 200 --- 15 pF dB % REV. C 1/1