ASI VMB40

VMB40-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .380 4L FLG
The ASI VMB40-12F is Designed for
12.5 V, Medium Band Class C
Applications.
B
.112 x 45°
A
Ø.125 NOM.
FULL R
J
FEATURES:
.125
• Common Emitter
• PG = 10 dB @ 40W/175MHz
• Omnigold™ Metalization System
C
D
E
F
G
H I
MAXIMUM RATINGS
IC
5.0 A
VCBO
36 V
VCEO
VEBO
18 V
PDISS
70 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.5 °C/W
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.785 / 19.94
MAXIMUM
C
.720 / 18.29
.730 / 18.54
D
.970 / 24.64
.980 / 24.89
.385 / 9.78
F
.004 / 0.10
.006 / 0.15
G
.085 / 2.16
.105 / 2.67
H
.160 / 4.06
.180 / 4.57
.280 / 7.11
I
.240 / 6.10
J
.255 / 6.48
ORDER CODE: ASI10743
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MINIMUM
E
4.0 V
CHARACTERISTICS
DIM
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
36
V
BVCES
IC = 50 mA
36
V
BVCEO
IC = 50 mA
18
V
BVEBO
IE = 10 mA
4.0
V
ICES
VCE = 12.5 V
hFE
VCE = 5.0 V
COB
VCB = 12.5 V
PG
ηC
VCC = 12.5 V
IC = 5.0 A
20
f = 1.0 MHz
POUT = 40 W
f = 88 MHz
10
mA
200
---
165
pF
dB
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5.0
%
REV. A
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