VMB40-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VMB40-12F is Designed for 12.5 V, Medium Band Class C Applications. B .112 x 45° A Ø.125 NOM. FULL R J FEATURES: .125 • Common Emitter • PG = 10 dB @ 40W/175MHz • Omnigold™ Metalization System C D E F G H I MAXIMUM RATINGS IC 5.0 A VCBO 36 V VCEO VEBO 18 V PDISS 70 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.5 °C/W inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 MAXIMUM C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 .385 / 9.78 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 I .240 / 6.10 J .255 / 6.48 ORDER CODE: ASI10743 TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM E 4.0 V CHARACTERISTICS DIM MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCES IC = 50 mA 36 V BVCEO IC = 50 mA 18 V BVEBO IE = 10 mA 4.0 V ICES VCE = 12.5 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCC = 12.5 V IC = 5.0 A 20 f = 1.0 MHz POUT = 40 W f = 88 MHz 10 mA 200 --- 165 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 % REV. A 1/1