HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W (PEP) • Omnigold™ Metalization System • Common Emitter configuration C E FULL R Ø.125 NOM. C B B E H E D G F I J K MAXIMUM RATINGS DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM IC 10 A VCBO 110 V B C .245 / 6.22 .255 / 6.48 55 V D .720 / 18.28 .7.30 / 18.54 VCEO VEBO .125 / 3.18 .125 / 3.18 E 4.0 V PDISS 233 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.75 °C/W F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 K L CHARACTERISTICS ORDER CODE: ASI10612 TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 110 V BVCES IC = 100 mA 110 V BVCEO IC = 100 mA 55 V BVEBO IE = 10 mA 4.0 V ICEO VCE = 30 V 5 mA ICES VCE = 60 V 5 mA hFE VCE = 6 V 43.5 --- Cob VCB = 50 V 220 pF -30 dB dBc % GP IMD3 ηC IC = 1.4 A 18 f = 1.0 MHz 14 VCE = 50 V ICQ =100 mA f1 = 30.000 MHz POUT = 150 W (PEP) f2 = 30.001 MHz 37 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1