VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45° • Common Emitter – Class-C • PG = 10 dB at 30 W/150 MHz • Omnigold™ Metalization System A E C Ø.125 NOM. FULL R J .125 B E C D E F MAXIMUM RATINGS I GH IC 4.0 A VCBO 65 V VEBO 4.0 V VCEO 35 V PDISS 40 W @ TC = 25 °C MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 .385 / 9.78 E -65 °C to +200 °C TJ MAXIMUM DIM .280 / 7.11 I J TSTG -65 °C to +150 °C θJC 4.4 °C/W CHARACTERISTICS ORDER CODE: ASI10724 TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VBE = 30 V hFE VCE = 5.0 V Cob VCB = 28 V fT VCE = 28 V PG ηC VCC = 28 V IC = 200 mA 35.0 f = 1.0 MHz IC = 200 mA POUT = 25 W f = 100 MHz f = 175 MHz 50 mA --- --- 250 pF MHz 8.5 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.0 dB % REV. E 1/1