ASI VHB10

VHB10-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB10-28S is an NPN power transistor
designed for 138-175 MHz VHF communications.
It utilizes emitter ballasting to provide high VSWR
handling capability.
PACKAGE STYLE .380 4L STUD
FEATURES:
.112x45°
• Common Emitter, 28 V operation
• PG = 10 dB at 10W/175 MHz
• Omnigold™ Metalization System
• High VSWR capability
E
B
D
H
I
J
65 V
VCEO
35 V
VEBO
4.0 V
#8-32 UNC-2A
F
13.0 W
O
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
.450 / 11.43
.490 / 12.45
.100 / 2.54
TJ
-65 ° C to +200 °C
G
H
.090 / 2.29
TSTG
-65 °C to +150 °C
I
.155 / 3.94
θJC
13.5 °C/W
CHARACTERISTICS
G
E
VCBO
.175 / 4.45
.750 / 19.05
J
ORDER CODE: ASI10723
TC = 25°C
NONETEST CONDITIONS
SYMBOL
E
ØC
1.0 A
PDISS
C
B
MAXIMUM RATINGS
IC
A
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 200 mA
65
V
BVCES
IC = 200 mA
65
V
BVCEO
IC = 200 mA
35
V
BVEBO
IE = 10 mA
4.0
V
ICBO
VCB = 30 V
hFE
VCE = 5.0 V
Cob
VCB = 30 V
PG
ηC
VCC = 28 V
PIN = 1.0 W
IC = 200 mA
5.0
f = 1.0 MHz
POUT = 10 W
f = 175 MHz
10
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
1.0
mA
200
---
15
pF
dB
%
REV. C
1/1