VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB50-28S is Designed for .112x45° FEATURES: A B • • • Omnigold™ Metalization System ØC D H MAXIMUM RATINGS J G #8-32 UNC-2A IC 6.5 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS F E 75 W TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θ JC 2.3 OC/W CHARACTERISTICS SYMBOL I MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10730 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 28 V O ICES VCE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V fT VCE = 10 V IC = 500 mA f = 100 MHz VCE = 28 V POUT = 50 W f = 150 MHz PG ηC TC = 125 C IC = 500 mA 5.0 f = 1.0 MHz 2.0 mA 10 mA --- --- 80 pF 200 MHz 6.0 dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. % REV. A 1/1