Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO General Description Features The AP2138/2139 series are CMOS-based positive voltage regulator ICs. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage and a current limit circuit for current protection. · · · · · The difference between AP2138 and AP2139 is the AP2139 has an enable circuit with a quick discharge function. · · · These ICs feature high output voltage accuracy, extremely low quiescent current and low dropout voltage which make them ideal for use in various power sources for portable applications. · · · The AP2138/2139 series have 1.2V, 1.4V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V and 3.3V fixed output voltage versions. Ultra-low Quiescent Current: 1.0µA Typical Output Voltages: 1.2V, 1.4V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V and 3.3V High Output Voltage Accuracy: ±2% Output Current: 250mA Low Dropout Voltage: 25mV Typical at IOUT=10mA and VOUT=3V 200mV Typical at IOUT=100mA and VOUT=3V Line Regulation: 6mV Typical Load Regulation: 25mV Typical Low Output Voltage Temperature Coefficient: ±100ppm/oC Low Standby Current: 0.1µA Typical (AP2139) Active Quick Output Discharge (AP2139) Logic-controlled Enable (AP2139) Applications The AP2138 series is available in SOT-23-3 and SOT89 packages, AP2139 series is available in SOT-23-5 package. SOT-23-3 AP2138/2139 · · · · · · · Battery Powered Equipment Reference Voltage Sources Cameras, Video Cameras Portable AV Systems Mobile Phones Communication Tools Portable Games SOT-23-5 SOT-89 Figure 1. Package Types of AP2138/2139 Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 1 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Pin Configuration K Package (SOT-23-5) N Package (SOT-23-3) 2 VIN VOUT 3 1 VIN 1 GND 2 CE 3 GND 5 VOUT 4 NC R Package (SOT-89) 3 VOUT 2 VIN 1 GND Figure 2. Pin Configuration of AP2138/2139 (Top View) Pin Description Pin Number Pin Name Function SOT-23-3 SOT-89 SOT-23-5 1 1 2 GND Ground 2 3 5 VOUT Regulated output voltage 3 2 1 VIN Input voltage 3 CE Active high enable input. Logic high=enable, logic low=shutdown 4 NC No connection Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 2 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Functional Block Diagram 3 (2) VIN 2 (3) VOUT 1 (1) GND VREF CURRENT LIMIT A(B) A: SOT-23-3 B: SOT-89 AP2138 1 VIN 5 VOUT VREF CURRENT LIMIT CE 3 2 GND AP2139 Figure 3. Functional Block Diagram of AP2138/2139 Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 3 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Ordering Information AP213X - Circuit Type G1: Green 8: AP2138 9: AP2139 TR: Tape and Reel 1.2: 1.4: 1.5: 1.8: 2.5: 2.8: 3.0: 3.3: A: Active High with Built-in Resistor Blank: No Enable Function Package N: SOT-23-3 K: SOT-23-5 R: SOT-89 Package Temperature Range SOT-23-3 SOT-89 -40 to 85oC -40 to 85oC Condition Part Number Fixed Output 1.2V Fixed Output 1.4V Fixed Output 1.5V Fixed Output 1.8V Fixed Output 2.5V Fixed Output 2.8V Fixed Output 3.0V Fixed Output 3.3V Marking ID Packing Type 1.2V AP2138N-1.2TRG1 GA3 Tape & Reel 1.4V AP2138N-1.4TRG1 GG1 Tape & Reel 1.5V AP2138N-1.5TRG1 GG2 Tape & Reel 1.8V AP2138N-1.8TRG1 GG4 Tape & Reel 2.5V AP2138N-2.5TRG1 GG5 Tape & Reel 2.8V AP2138N-2.8TRG1 GG6 Tape & Reel 3.0V AP2138N-3.0TRG1 GG3 Tape & Reel 3.3V AP2138N-3.3TRG1 GG7 Tape & Reel 1.2V AP2138R-1.2TRG1 G42C Tape & Reel 1.4V AP2138R-1.4TRG1 G42D Tape & Reel 1.5V AP2138R-1.5TRG1 G42E Tape & Reel 1.8V AP2138R-1.8TRG1 G42F Tape & Reel 2.5V AP2138R-2.5TRG1 G42G Tape & Reel 2.8V AP2138R-2.8TRG1 G42H Tape & Reel 3.0V AP2138R-3.0TRG1 G42J Tape & Reel 3.3V AP2138R-3.3TRG1 G42K Tape & Reel Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 4 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Ordering Information (Continued) Package Temperature Range Condition Active High with Built-in Resistor SOT-23-5 -40 to 85oC Part Number Packing Type Marking ID AP2139AK-1.2TRG1 G7R Tape & Reel Active High with Built-in Resistor AP2139AK-1.4TRG1 G6L Tape & Reel Active High with Built-in Resistor AP2139AK-1.5TRG1 G6M Tape & Reel Active High with Built-in Resistor AP2139AK-1.8TRG1 G6N Tape & Reel Active High with Built-in Resistor AP2139AK-2.5TRG1 G6P Tape & Reel Active High with Built-in Resistor AP2139AK-2.8TRG1 G6Q Tape & Reel Active High with Built-in Resistor AP2139AK-3.0TRG1 G6J Tape & Reel Active High with Built-in Resistor AP2139AK-3.3TRG1 G6R Tape & Reel BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 5 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 7.0 V Enable Input Voltage (AP2139) VCE -0.3 to VIN+0.3 V TLEAD 260 o TJ 150 o Storage Temperature Range TSTG -65 to 150 oC ESD (Machine Model) ESD 350 V ESD (Human Body Model) ESD 2000 V Thermal Resistance (Note 2) θJA Lead Temperature Junction Temperature C C SOT-23-3 250 SOT-23-5 250 SOT-89 165 oC/W Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage VIN 2.5 6.6 V Operating Ambient Temperature Range TA -40 85 oC Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 6 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Electrical Characteristics AP2138/2139-1.2 Electrical Characteristics (VIN=2.5V, VCE=2.5V (AP2139),TJ=25oC, IOUT=40mA, CIN=COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Input Voltage Output Voltage Symbol Conditions Min Typ Max Unit 6.6 V 1.200 1.224 V VIN 1.176 VOUT IQ IOUT=0 1.0 1.5 µA Standby Current (AP2139) ISTD VCE=0 0.1 1 µA Output Current IOUT Quiescent Current 250 mA Load Regulation VRLOAD 1mA≤IOUT≤100mA 25 40 mV Line Regulation VRLINE 2.2V≤VIN≤6V 6 18 mV IOUT=10mA 100 300 IOUT=30mA 400 700 IOUT=100mA 700 1000 IOUT=250mA 1000 1300 Dropout Voltage Output Voltage Temperature Coefficient Short Circuit Current VDROP ∆VOUT/∆T ±140 µV/oC (∆VOUT/VOUT)/∆T ±100 ppm/oC 50 mA 0.2 µA ISHORT CE Pull-down Constant Current (AP2139) IPD CE Input Logic-high Voltage (AP2139) VIH CE Input Logic-low Voltage (AP2139) VIL Thermal Resistance mV θJC VOUT=0 1.2 V 0.3 SOT-23-3 81.9 SOT-23-5 81.9 SOT-89 51.1 Jul. 2011 Rev. 2. 0 V o C/W BCD Semiconductor Manufacturing Limited 7 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Electrical Characteristics(Continued) AP2138/2139-1.4 Electrical Characteristics (VIN=2.5V, VCE=2.5V (AP2139),TJ=25oC, IOUT=40mA, CIN=COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Input Voltage Output Voltage Symbol Conditions Min Typ Max Unit 6.6 V 1.400 1.428 V VIN 1.372 VOUT IQ IOUT=0 1.0 1.5 µA Standby Current (AP2139) ISTD VCE=0 0.1 1 µA Output Current IOUT Quiescent Current 250 mA Load Regulation VRLOAD 1mA≤IOUT≤100mA 25 40 mV Line Regulation VRLINE 2.4V≤VIN≤6V 6 18 mV IOUT=10mA 100 300 IOUT=30mA 400 700 IOUT=100mA 600 900 IOUT=250mA 1000 1300 Dropout Voltage Output Voltage Temperature Coefficient Short Circuit Current VDROP ∆VOUT/∆T ±140 µV/oC (∆VOUT/VOUT)/∆T ±100 ppm/oC 50 mA 0.2 µA ISHORT CE Pull-down Constant Current (AP2139) IPD CE Input Logic-high Voltage (AP2139) VIH CE Input Logic-low Voltage (AP2139) VIL Thermal Resistance mV θJC VOUT=0 1.2 V 0.3 SOT-23-3 81.9 SOT-23-5 81.9 SOT-89 51.1 Jul. 2011 Rev. 2. 0 V o C/W BCD Semiconductor Manufacturing Limited 8 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Electrical Characteristics (Continued) AP2138/2139-1.5 Electrical Characteristics (VIN=2.5V, VCE=2.5V (AP2139),TJ=25oC, IOUT=40mA, CIN=COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Input Voltage Output Voltage Symbol Conditions Min Typ Max Unit 6.6 V 1.500 1.530 V VIN VOUT 1.470 IQ IOUT=0 1.0 1.5 µA Standby Current (AP2139) ISTD VCE=0 0.1 1 µA Output Current IOUT Quiescent Current 250 mA Load Regulation VRLOAD 1mA≤IOUT≤100mA 25 40 mV Line Regulation VRLINE 2.5V≤VIN≤6V 6 18 mV IOUT=10mA 100 300 IOUT=30mA 200 400 IOUT=100mA 600 900 IOUT=250mA 1000 1300 Dropout Voltage Output Voltage Temperature Coefficient Short Circuit Current VDROP ∆VOUT/∆T ±150 µV/oC (∆VOUT/VOUT)/∆T ±100 ppm/oC 50 mA 0.2 µA ISHORT CE Pull-down Constant Current (AP2139) IPD CE Input Logic-high Voltage (AP2139) VIH CE Input Logic-low Voltage (AP2139) VIL Thermal Resistance mV θJC VOUT=0 1.2 V 0.3 SOT-23-3 81.9 SOT-23-5 81.9 SOT-89 51.1 Jul. 2011 Rev. 2. 0 V o C/W BCD Semiconductor Manufacturing Limited 9 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Electrical Characteristics (Continued) AP2138/2139-1.8 Electrical Characteristics (VIN=2.8V, VCE=2.8V (AP2139),TJ=25oC, IOUT=40mA, CIN=COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Input Voltage Output Voltage Symbol Conditions Min Typ Max Unit 6.6 V 1.800 1.836 V VIN VOUT 1.764 IQ IOUT=0 1.0 1.5 µA Standby Current (AP2139) ISTD VCE=0 0.1 1 µA Output Current IOUT Quiescent Current 250 mA Load Regulation VRLOAD 1mA≤IOUT≤100mA 25 40 mV Line Regulation VRLINE 2.8V≤VIN≤6V 6 18 mV IOUT=10mA 25 100 IOUT=30mA 120 250 IOUT=100mA 400 700 IOUT=250mA 850 1100 Dropout Voltage Output Voltage Temperature Coefficient Short Circuit Current VDROP ∆VOUT/∆T ±180 µV/oC (∆VOUT/VOUT)/∆T ±100 ppm/oC 50 mA 0.2 µA ISHORT CE Pull-down Constant Current (AP2139) IPD CE Input Logic-high Voltage (AP2139) VIH CE Input Logic-low Voltage (AP2139) VIL Thermal Resistance mV θJC VOUT=0 1.2 V 0.3 SOT-23-3 81.9 SOT-23-5 81.9 SOT-89 51.1 Jul. 2011 Rev. 2. 0 V o C/W BCD Semiconductor Manufacturing Limited 10 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Electrical Characteristics (Continued) AP2138/2139-2.5 Electrical Characteristics (VIN=3.5V, VCE=3.5V (AP2139), TJ=25oC, IOUT=40mA, CIN=COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Input Voltage Output Voltage Symbol Conditions Min Typ Max Unit 6.6 V 2.500 2.550 V VIN VOUT 2.450 IQ IOUT=0 1.0 1.5 µA Standby Current (AP2139) ISTD VCE=0 0.1 1 µA Output Current IOUT Quiescent Current 250 mA Load Regulation VRLOAD 1mA≤IOUT≤100mA 25 40 mV Line Regulation VRLINE 3.5V≤VIN≤6V 6 18 mV IOUT=10mA 25 100 IOUT=30mA 100 250 IOUT=100mA 250 500 IOUT=250mA 650 1000 Dropout Voltage Output Voltage Temperature Coefficient Short Circuit Current VDROP ∆VOUT/∆T ±250 µV/oC (∆VOUT/VOUT)/∆T ±100 ppm/oC 50 mA 0.2 µA ISHORT CE Pull-down Constant Current (AP2139) IPD CE Input Logic-high Voltage (AP2139) VIH CE Input Logic-low Voltage (AP2139) VIL Thermal Resistance mV θJC VOUT=0 1.2 V 0.3 SOT-23-3 81.9 SOT-23-5 81.9 SOT-89 51.1 Jul. 2011 Rev. 2. 0 V o C/W BCD Semiconductor Manufacturing Limited 11 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Electrical Characteristics (Continued) AP2138/2139-2.8 Electrical Characteristics (VIN=3.8V, VCE=3.8V (AP2139), TJ=25oC, IOUT=40mA, CIN=COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Input Voltage Output Voltage Symbol Conditions Min Typ Max Unit 6.6 V 2.800 2.856 V VIN VOUT 2.744 IQ IOUT=0 1.0 1.5 µA Standby Current (AP2139) ISTD VCE=0 0.1 1 µA Output Current IOUT Quiescent Current 250 mA Load Regulation VRLOAD 1mA≤IOUT≤100mA 25 40 mV Line Regulation VRLINE 3.8V≤VIN≤6V 6 18 mV IOUT=10mA 25 100 IOUT=30mA 70 200 IOUT=100mA 250 500 IOUT=250mA 500 800 Dropout Voltage Output Voltage Temperature Coefficient Short Circuit Current VDROP ∆VOUT/∆T ±280 µV/oC (∆VOUT/VOUT)/∆T ±100 ppm/oC 50 mA 0.2 µA ISHORT CE Pull-down Constant Current (AP2139) IPD CE Input Logic-high Voltage (AP2139) VIH CE Input Logic-low Voltage (AP2139) VIL Thermal Resistance mV θJC VOUT=0 1.2 V 0.3 SOT-23-3 81.9 SOT-23-5 81.9 SOT-89 51.1 Jul. 2011 Rev. 2. 0 V o C/W BCD Semiconductor Manufacturing Limited 12 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Electrical Characteristics (Continued) AP2138/2139-3.0 Electrical Characteristics (VIN=4V, VCE=4V (AP2139), TJ=25oC, IOUT=40mA, CIN=COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Input Voltage Output Voltage Symbol Conditions Min Typ Max Unit 6.6 V 3.000 3.060 V VIN 2.940 VOUT IQ IOUT=0 1.0 1.5 µA Standby Current (AP2139) ISTD VCE=0 0.1 1 µA Output Current IOUT Quiescent Current 250 mA Load Regulation VRLOAD 1mA≤IOUT≤100mA 25 40 mV Line Regulation VRLINE 4V≤VIN≤6V 6 18 mV IOUT=10mA 25 100 IOUT=30mA 70 200 IOUT=100mA 200 400 IOUT=250mA 450 700 Dropout Voltage Output Voltage Temperature Coefficient Short Circuit Current VDROP ∆VOUT/∆T ±300 µV/oC (∆VOUT/VOUT)/∆T ±100 ppm/oC 50 mA 0.2 µA ISHORT CE Pull-down Constant Current (AP2139) IPD CE Input Logic-high Voltage (AP2139) VIH CE Input Logic-low Voltage (AP2139) VIL Thermal Resistance mV θJC VOUT=0 1.2 V 0.3 SOT-23-3 81.9 SOT-23-5 81.9 SOT-89 51.1 Jul. 2011 Rev. 2. 0 V o C/W BCD Semiconductor Manufacturing Limited 13 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Electrical Characteristics (Continued) AP2138/2139-3.3 Electrical Characteristics (VIN=4.3V, VCE=4.3V (AP2139),TJ=25oC, IOUT=40mA, CIN=COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Input Voltage Output Voltage Symbol Conditions Min Typ Max Unit 6.6 V 3.300 3.366 V VIN 3.234 VOUT IQ IOUT=0 1.0 1.5 µA Standby Current (AP2139) ISTD VCE=0 0.1 1 µA Output Current IOUT Quiescent Current 250 mA Load Regulation VRLOAD 1mA≤IOUT≤100mA 25 40 mV Line Regulation VRLINE 4.3V≤VIN≤6V 6 18 mV IOUT=10mA 20 100 IOUT=30mA 50 200 IOUT=100mA 160 300 IOUT=250mA 400 600 Dropout Voltage Output Voltage Temperature Coefficient Short Circuit Current VDROP ∆VOUT/∆T ±330 µV/oC (∆VOUT/VOUT)/∆T ±100 ppm/oC 50 mA 0.2 µA ISHORT CE Pull-down Constant Current (AP2139) IPD CE Input Logic-high Voltage (AP2139) VIH CE Input Logic-low Voltage (AP2139) VIL Thermal Resistance mV θJC VOUT=0 1.2 V 0.3 SOT-23-3 81.9 SOT-23-5 81.9 SOT-89 51.1 Jul. 2011 Rev. 2. 0 V o C/W BCD Semiconductor Manufacturing Limited 14 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Typical Performance Characteristics 3.40 4.0 AP2138-3.3 No load 3.5 IOUT=10mA AP2138-3.3 3.38 IOUT=100mA 3.36 IOUT=150mA 3.34 IOUT=200mA Output Voltage (V) Output Voltage (V) 3.0 2.5 2.0 1.5 o TJ=-40 C o TJ=25 C 1.0 IOUT=250mA 3.32 3.30 3.28 3.26 o 3.24 TJ=85 C 0.5 3.22 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 3.20 -40 6.5 -20 0 60 80 100 120 Figure 5. Output Voltage vs. Junction Temperature 3.40 1.6 AP2138-3.3 VIN=4.3V 3.38 3.36 AP2138-3.3 No Load 1.4 o TJ=25 C 1.2 Quiescent Current(µA) 3.34 Output Voltage (V) 40 Junction Temperature( C) Figure 4. Output Voltage vs. Input Voltage 3.32 3.30 3.28 3.26 3.24 1.0 0.8 0.6 o TJ=-40 C 0.4 o TJ=25 C o TJ=85 C 0.2 3.22 3.20 20 o Input Voltage (V) 0 25 50 75 100 125 150 175 200 225 0.0 250 Output Current (mA) 0 1 2 3 4 5 6 7 8 Input Voltage (V) Figure 6. Output Voltage vs. Output Current Figure 7. Quiescent Current vs. Input Voltage Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 15 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Typical Performance Characteristics (Continued) 2.0 50 1.8 45 No Load 40 1.4 Quiescent Current (µA) Quiescent Current (µA) 1.6 AP2138-3.3 VIN=4.3V 1.2 1.0 0.8 0.6 0.4 35 30 25 20 15 o TJ=-40 C 10 0.2 o TJ=25 C 5 0.0 -40 -20 0 20 40 60 0 80 o Junction Temperature( C) o TJ=85 C 0 25 50 75 100 125 150 175 225 250 Figure 9. Quiescent Current vs. Output Current 4.0 4.0 AP2138-3.3 VIN=4.3V 3.5 AP2138-3.3 o TJ=25 C 3.5 3.0 Output Voltage (V) 3.0 2.5 2.0 1.5 2.5 2.0 1.5 VIN=3.8V o TJ=-40 C 1.0 VIN=4.3V 1.0 VIN=6V o TJ=25 C TJ=85 C 0.0 0 50 100 150 200 250 300 350 400 450 500 550 VIN=6.5V 0.5 o 0.5 0.0 200 Output Current (mA) Figure 8. Quiescent Current vs. Junction Temperature Output Voltage (V) AP2138-3.3 VIN=4.3V 600 Output Current (mA) 0 50 100 150 200 250 300 350 400 450 500 550 600 Output Current (mA) Figure 11. Output Voltage vs. Output Current Figure 10. Output Voltage vs. Output Current Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 16 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Typical Performance Characteristics (Continued) 550 600 AP2138-3.3 o TJ=-40 C 550 500 450 IOUT=200mA 400 o Dropout Voltage (mV) TJ=85 C 400 350 300 250 200 150 350 IOUT=150mA 300 250 IOUT=100mA 200 150 100 100 IOUT=10mA 50 50 0 IOUT=250mA AP2138-3.3 o TJ=25 C 450 Dropout Voltage (mV) 500 0 25 50 75 100 125 150 175 200 225 0 -40 250 -20 0 20 40 60 80 o Output Current (mA) Junction Temperature ( C) Figure 12. Dropout Voltage vs. Output Current Figure 13. Dropout Voltage vs. Junction Temperature VOUT 1V/div VIN 500mV VOUT 200mV/div IOUT 50mA/div Time 2ms/div Time 100µs/div Figure 14. Line transient (VIN=4.3 to 5.3V, IOUT=10mA) Jul. 2011 Rev. 2. 0 Figure 15. Load transient (VIN=4.3V, IOUT=1mA to150mA) BCD Semiconductor Manufacturing Limited 17 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Typical Performance Characteristics (Continued) VIN 1V/div VIN 1V/div VOUT 1V/div VOUT 1V/div Time 200µs/div Time 200µs/div Figure 17. Enable Input Response Figure 16. Start-up Response Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 18 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Typical Application AP2138-1.4 VIN=2.4V VIN VIN VOUT=1.4V VOUT GND VOUT COUT 1µF CIN 1µF AP2139-3.0 VIN=4V VIN VIN VOUT=3V VOUT VOUT GND CE COUT NC 1µF CIN 1µF Note: Filter capacitors are required at the AP2138/2139's input and output. 1µF capacitor is required at the input. The minimum output capacitance required for stability should be more than 1µF with ESR from 0.01Ω to 100Ω. Ceramic capacitors are recommended. Figure 18. Typical Application of AP2138/2139 Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 19 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Mechanical Dimensions SOT-23-3 Jul. 2011 Rev. 2. 0 Unit: mm(inch) BCD Semiconductor Manufacturing Limited 20 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Mechanical Dimensions (Continued) SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.700(0.067) 1.500(0.059) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 0.000(0.000) MAX 1.450(0.057) 0.950(0.037) TYP 0.100(0.004) 0.900(0.035) 1.300(0.051) Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 21 Preliminary Datasheet ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139 Mechanical Dimensions (Continued) SOT-89 1.550(0.061)REF Unit: mm(inch) 4.400(0.173) 4.600(0.181) 1.400(0.055) 1.600(0.063) 1.030(0.041)REF 45 2.300(0.091) 2.600(0.102) 3.950(0.156) 4.250(0.167) 2.060(0.081)REF 3 0.900(0.035) 1.100(0.043) 0.320(0.013) 0.520(0.020) 0.480(0.019) 0.320(0.013) 0.520(0.020) 10 0.350(0.014) 0.450(0.018) 3.000(0.118) TYP 1.500(0.059) 1.800(0.071) 0.320(0.013)REF 3 2.210(0.087)REF 1.620(0.064)REF R0.150(0.006) 10 Jul. 2011 Rev. 2. 0 BCD Semiconductor Manufacturing Limited 22 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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