CHENMKO CH715TSPT

CHENMKO ENTERPRISE CO.,LTD
CH715TSPT
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
VOLTAGE 40 Volts CURRENT 0.03 Ampere
APPLICATION
* General purpose detection
* High speed switching
SC-75/SOT-416
FEATURE
* Small surface mounting dual element linear type.
(SC-75/SOT-416)
* Low VF and low IR.
* High reliability
(2)
0.1
0.2±0.05
(3)
CONSTRUCTION
(1)
1.0±0.1
0.1
0.3±0.05
0.5 1.6±0.2
0.5
0.1
0.2±0.05
0.8±0.1
* Silicon epitaxial planar
MARKING
* TI
0.6~0.9
0.15±0.05
0~0.1
0.1Min.
(2)
CIRCUIT
1.6±0.2
(1)
Dimensions in millimeters
(3)
SC-75/SOT-416
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
CH715TSPT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
40
Volts
Maximum RMS Voltage
VRMS
28
Volts
Maximum DC Blocking Voltage
VDC
40
Volts
IO
0.03
Amps
IFSM
0.2
Amps
pF
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 8.3 mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
CJ
2.0
Maximum Operating Temperature Range
TJ
+125
o
C
TSTG
-40 to +125
o
C
Storage Temperature Range
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
CH715TSPT
UNITS
Maximum Instantaneous Forward Voltage at IF= 1mA
CHARACTERISTICS
VF
0.37
Volts
Maximum Average Reverse Current at VR= 10V
IR
1.0
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 1.0 volts.
2. ESD sensitive product handling required.
uAmps
2004-10
RATING CHARACTERISTIC CURVES ( CH715TSPT)
FIG. 2 - REVERSE CHARACTERISTICS
FIG. 1 - FORWARD CHARACTERISITICS
1
100u
Typ.
pulse measurement
REVERSE CURRENT, (A)
FORWARD CURRENT, (A)
100m
Ta =125oC
10m
75oC
1m
o
25 C
100u
- 25oC
10u
Ta =125oC
10u
75oC
1u
25oC
100n
-25oC
10n
1n
1u
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
FORWARD VOLTAGE, (V)
15
20
25
30
35
REVERSE VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
FIG. 4 REVERSE RECOVERY TIME CHARACTERISTICS
10
REVERSE RECOVERY TIME, (nS)
100
JUNCTION CAPACITANCE, (pF)
10
10
1
0.1
5
2
1
0.5
0.2
0.1
0
5
10
15
REVERSE VOLTAGE, (V)
20
25
0
4
8
12
16
20
FORWARD CURRENT, (mA)
24
28