CHENMKO ENTERPRISE CO.,LTD CHIMD1PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. * * * * SC-74/SOT-457 Low colloector-emitter saturation. High saturation current capability. Both the CHDTA124T & CHDTC124T in one package. Built in bias resistor(R1=22kΩ, Typ. ) (1) (6) 0.95 1.7~2.1 2.7~3.1 0.95 (3) (4) 0.25~0.5 1.4~1.8 0.935~1.3 0.08~0.2 0~0.15 0.3~0.6 CIRCUIT 1 3 2.6~3.0 R1 R1 6 4 SC-74/SOT-457 Dimensions in millimeters CHDTA124T LIMITING VALUES In accordance with the Absolute Maximum Rating System . SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage -50 V VCEO Collector-Emitter voltage -50 V VEBO Emitter-Base voltage -5 V IC Coll ector current -100 mA PC Collector Power dissipation 300 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-04 CHDTC124T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 50 V VCEO Collector-Emitter voltage 50 V VEBO Emitter-Base voltage 5 V IC(Max.) Coll ector current 100 mA 150 mW Tamb ≤ 25 C, Note 1 O PD Power dissipation TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C RθJ-S Thermal resistance , Note 1 140 O C/W junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. CHDTA124T CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage BVCEO Collector-Emitter breakdown voltage IC= -1mA BVEBO Emitter-Base breakdown voltage IE= -50uA VCE(sat) Collector-Emitter Saturation voltage ICBO IC= -50uA MIN. TY P . -50.0 − -50.0 − − MAX. V − V − V − -0.3 V − -0.5 uA − -0.5 uA 250 600 IC= -5mA; IB= -0.5mA -5.0 − Collector-Base current VCB= -50V − IEBO Emitter-Base current VEB= -4V − hFE DC current gain IC= -1mA; VCE= -5.0V 100 R1 fT Input resistor Transition frequency 15.4 − 22 250 26.6 − IE=5mA, VCE= -10.0V f=100MHz = UNIT − KΩ MHz Not e 1.Pulse test: tp≤300uS; δ ≤0.02. CHDTC124T CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS BVCBO Collector-base breakdown voltage BVCEO Collector-emitter breakdown voltage IC=1.0mA IC=50uA MIN. TYP. MAX. UNIT 50 − − V 50 − − V BVEBO Emitter-base breakdown voltage IE=50uA 5.0 − − V ICBO Collector cutoff current VCB=50V − − 0.5 uA IEBO Emitter cutoff current VEB=4V − − 0.5 uA VCE(sat) Collector-emitter saturation voltage IC/IB=5mA/0.5mA − − 0.3 V hFE DC current gain IC=1mA; VCE=5.0V 100 250 600 R1 fT Input resistor Transition frequency 15.4 − 22 250 28.6 − Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=5mA, VCE=10.0V f=100MHz KΩ MHz RATING CHARACTERISTIC CURVES ( CHIMD1PT) Fig.1 DC current gain vs. collector current 1k VCE=-5V DC CURRENT GAIN : hFE 500 200 100 50 Ta=100OC 25OC -40OC 20 10 5 2 1 -100u −1m -5m -10m -50m -100m COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) CHDTA124T Typical Electrical Characteristics Fig.2 Collector-emitter saturation voltage vs. collector current -1 lC/lB=10 -500m -200m -100m 100OC 25OC -40 OC -50m -20m -10m -5m -2m -1m -10u -50u -100u -500u -1m COLLECTOR CURRENT : IC (A) -5m -10m RATING CHARACTERISTIC CURVES ( CHIMD1PT) CHDTC124T Typical Electrical Characteristics Fig.1 DC current gain vs. collector current VCE = 5V DC CURRENT GAIN : hFE 500 200 100 Ta=100OC 25OC -40OC 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) COLLECsaturationTOR VOLTAGE : VCE(sat) (V) 1k Fig.2 Collector-emitter voltage vs. collector current 1 lO/lI=10 500m 200m Ta=100OC 25OC -40 OC 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (uA)