SMD Schottky Barrier Diodes CDBW0520L-G Thru. CDBW0540-G Reverse Voltage: 20 to 40 Volts Forward Current: 0.5 Amp RoHS Device Features SOD-123 -Low turn on voltage. 0.110(2.80) 0.098(2.50) -Fast switching. -PN junction guard ring for transient and ESD protection. 0.071(1.80) 0.055(1.40) 0.028(0.70) 0.019(0.50) Mechanical data 0.154(3.90) 0.141(3.60) -Case: SOD-123, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. 0.053(1.35) 0.037(0.95) -Polarity: Color band denotes cathode end. 0.008(0.20) Max. 0.016(0.40) Min. 0.005(0.12) Max. -Weight: 0.0097 gram(approx.). Marking CDBW0520L-G: SD Dimensions in inches and (millimeter) CDBW0530-G: SE CDBW0540-G: SF Maximum Ratings and Electrical Characteristics (At Ta=25°C, unless otherwise noted) Parameter Symbol CDBW0520L-G CDBW0530-G CDBW0540-G Units Max. repetitive peak reverse voltage VRRM 20 30 40 V Max. DC blocking voltage VDC 20 30 40 V Max. RMS voltage VRMS 14 21 28 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 5.5 A Max. average forward current IO 0.5 A Max. forward voltage VF 0.3@IF=0.1A 0.385@IF=0.5A 0.375@IF=0.1A 0.430@IF=0.5A 0.51@IF=0.5A 0.62@IF=1.0A V Max. reverse current IR 0.075@VR=10V 0.25@VR=20V 0.02@VR=15V 0.13@VR=30V 0.01@VR=20V 0.02@VR=40V mA Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature RθJA RθJL 206 150 °C/W TJ 125 °C TSTG -55 to +125 °C 2 Notes: 1. Thermal resistance from junction to ambient and junction to lead, mounted on P.C.B. with 0.2×0.2 inch copper pad area. REV:B Page 1 QW-BB001 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes RATING AND CHARACTERISTIC CURVES (CDBW0520L-G thru CDBW0540-G) Fig.1 Forward Characteristics Fig.2 Current Derating Curve 10 A v e ra ge Rec t ifi e d Curr e n t(A ) 1.2 F o r w a rdC u rr e n t (A ) CDBW0540-G 1 CDBW0520L-G 0.1 CDBW0530-G 0.01 Mounted on glass epoxy PCB 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 0 Forward voltage (V) 25 50 75 100 125 150 Lead Temperature (°C) Fig.3 Total Capacitance vs. Reverse voltage 1000 To ta lC a p a c i ta n c e ( p F ) f=1.0MHz 100 10 1 0.1 0 5 10 15 20 25 Reverse Voltage (V) REV:B Page 2 QW-BB001 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes Reel Taping Specification d P0 P1 T E Index hole F W B C Polarity P A 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOD-123 SOD-123 SYMBOL A B C d D D1 D2 (mm) 1.90 ± 0.10 4.00 ± 0.10 1.50 ± 0.10 1.55 ± 0.10 178 ± 1.00 50.0 MIN. 13.0 ± 0.20 (inch) 0.075 ± 0.04 0.157 ± 0.04 0.059 ± 0.04 0.061 ± 0.04 7.00 ± 0.039 1.968 MIN. 0.512 ± 0.079 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.30 14.4 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 ± 0.011 0.567 MAX REV:B Page 3 QW-BB001 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes Marking Code Part Number Marking Code CDBW0520L-G SD CDBW0530-G SE CDBW0540-G SF XX xx = Product type marking code Suggested PAD Layout SOD-123 SIZE D (mm) (inch) A 3.35 0.132 B 0.80 0.032 C 1.00 0.039 D 5.02 0.198 E 1.67 0.066 A E C B Standard Packaging REEL PACK Case Type SOD-123 REEL Reel Size ( pcs ) (inch) 3,000 7 REV:B Page 4 QW-BB001 Comchip Technology CO., LTD.