COMCHIP CDBQR54

SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBQR54(RoHS Device)
Io = 200 mA
V R = 30 Volts
Features
0402(1005)
Low forward voltage.
0.041(1.05)
0.037(0.95)
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
0.026(0.65)
0.022(0.55)
Mechanical data
Case: 0402(1005) standard package,
molded plastic.
0.022(0.55)
0.018(0.45)
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
0.012(0.30) Typ.
Marking Code: Cathode band & BF
Mounting position: Any
Weight: 0.001 gram(approx.).
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Peak reverse voltage
Reverse voltage
RMS reverse voltage
Average forward rectified current
Repetitive peak forward current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power dissipation
V RM
30
V
VR
30
V
V R(RMS)
21
V
IO
200
mA
I FRM
0.3
A
I FSM
0.6
A
PD
125
mW
Storage temperature
T STG
Junction temperature
Tj
-65
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Forward voltage
I F = 0.1mA
I F = 1mA
I F = 10mA
I F = 30mA
I F = 100mA
Reverse current
Symbol Min Typ Max Unit
VF
0.24
0.32
0.4
0.5
1
V
V R = 25V
IR
2
uA
Capacitance between terminals
f = 1 MHz, and 1 VDC reverse voltage
CT
10
pF
Reverse recovery time
I F =I R =10mA,Irr=0.1xIR,RL=100 Ohm
T rr
5
nS
REV:B
Page 1
QW-A1122
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBQR54)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
1m
1000
Reverse current ( A )
100
10
O
75 C
1u
O
25 C
C
100n
O
C
10u
-25
O
25
C
O
125
75 C
1
O
Forward current (mA )
O
125 C
100u
O
-25 C
0.1
10n
0
0.2
0.4
0.6
0.8
0
5
15
20
30
25
Reverse voltage (V)
Forward voltage (V)
Fig.3 - Capacitance between
terminals characteristics
Fig.4 - Current derating curve
120
14
Mounting on glass epoxy PCBs
f=1MHz
O
T A =25 C
12
Average forward current(%)
Capacitance between terminals ( P F)
10
10
8
6
4
2
100
80
60
40
20
0
0
0
5
10
15
20
25
30
0
25
50
75
100
125
150
O
Reverse voltage (V)
Ambient temperature ( C)
REV:B
Page 2
QW-A1122
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
Polarity
P
C
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
QR/0402
QR/0402
SYMBOL
A
B
C
d
D
D1
D2
(mm)
0.75 ± 0.10
1.15 ± 0.10
0.60 ± 0.10
1.55 ± 0.10
178 ± 1
60.0 MIN.
13.0 ± 0.20
(inch)
0.026 ± 0.004
0.045 ± 0.004
0.024 ± 0.004
0.061 ± 0.004
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
0.22 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:B
Page 3
QW-A1122
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Part Number
Marking Code
CDBQR54
BF
BF
Suggested PAD Layout
QR/0402
SIZE
(mm)
(inch)
A
0.750
0.030
B
0.500
0.020
C
0.700
0.028
D
1.250
0.049
E
0.250
0.010
D
A
E
C
B
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
5000
7
Case Type
QR/0402
REV:B
Page 4
QW-A1122
Comchip Technology CO., LTD.