SMD Switching Diode CDSH6-16-G RoHS Device Features SOT-563 -Fast Switching Speed 0.067(1.70) 0.059(1.50) -For general purpose switching applications. -High conductance. 0.051(1.30) 0.043(1.10) Mechanical data -Case: SOT-563, Molded Plastic 0.022(0.55) 0.018(0.45) -Terminals: Solderable per MIL-STD-202, Method 208 0.024(0.60) 0.021(0.52) 0.006(0.16) 0.004(0.09) 0.067(1.70) 0.059(1.50) Marking: KAM Circuit diagram C1 NC A2 A1 NC C2 0.011(0.27) 0.007(0.17) 0.012(0.30) 0.004(0.10) 0.002(0.05)max Dimensions in inches and (millimeters) Maximum Ratings (at TA=25°C unless otherwise noted) Symbol Max Unit Non-repetitive peak reverse voltage VRM 100 V Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR 75 V VR(RMS) 53 V Forward continuous current IFM 300 mA Averaged rectified output current IO 200 mA IFSM 2 1 A PD 150 mW RθJA 833 TJ 150 O C -65 to +150 O C Parameter RMS reverse voltage Peak forward surge current @t=1.0μs @T=1.0s Power dissipation Thermal resistance, junction to air Junction temperature Storage temperature TSTG O C/W Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Unit Min Max 75 A V IR 1 25 μA nA V Reverse breakdown voltage IR=100μA VBR Reverse voltage leakage current VR=75V VR=20V Forward voltage IF=1mA IF=10mA IF=50mA IF=150mA VF 0.715 0.855 1 1.25 Diode capacitance VR=0V, f=1MHz CT 2 pF Reverse recovery time IF=IR=10mA, Irr=0.1×IR, RL=100Ω trr 4 nS REV:B Page 1 QW-B0042 Comchip Technology CO., LTD. SMD Switching Diode Typical Characteristics (CDSH6-16-G) Fig.1 - Forward Power Derating Curve Fig.2 - Typical Forward Characteristics 1 IF, Instantaneous Forward Current (A) PD, Power Dissipation (mW) 250 200 150 100 50 0 0 50 100 150 O TA=150 C 0.1 O TA=75 C TA=25 OC O TA=0 C 0.01 TA=-40 OC 0.001 0 200 0.5 1.5 1 TA, Ambient Temperature (°C) VF, Instantaneous Forward Voltage (V) Fig.3 - Typical Diode Capacitance Characteristics Fig.4 - Typical Reverse Current Characteristics 2.0 10000 TA=150 OC O TA=125 OC 1.6 IR, Reverse Current (nA) CT, Diode Capacitance (pF) TJ=25 C f=1MHz 1.2 0.8 0.4 1000 TA=75 OC 100 TA=25 OC 10 O TA=0 C 1 O TA=-40 C 0.1 0 0 10 20 30 40 0 20 40 60 80 100 VR, Reverse Voltage (V) VR, Reverse Voltage (V) REV:B Page 2 QW-B0042 Comchip Technology CO., LTD.