COMCHIP SMD Switching Diode Arrays SMD Diodes Specialist CDSV6-99BR-G Forward Current: 0.15A Reverse Voltage: 75V RoHS Device Features SOT-363 -Fast switching speed. 0.087(2.20) 0.071(1.80) -Ultra small surface mount package. -For general purpose swicthing applications. 0.053(1.35) 0.045(1.15) -High conductance. Marking: KGJ Diagram: AC C1 0.006(0.15) 0.003(0.08) 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) 0.096(2.45) 0.085(2.15) C2 1 0.014(0.35) 0.006(0.15) A1 A2 0.004(0.10)max 0.010(0.25)min Dimensions in inches and (millimeters) AC 2 Maximum Rating (at T A =25 C unless otherwise noted) O Symbol Limits Unit V RRM V RWM VR 75 V Forward continuous current I FM 300 mA Averaged rectified output current IO 150 mA I FSM 2.0 1.0 A PD 200 mW RθJA 625 TJ 150 O C T STG -65 ~ +150 O C Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Non-repetitive peak forward surge current @t=1.0μS @t=1.0S Power dissipation Thermal resistance, junction to ambient air Operation junction temperature Storage temperature range O C/W Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Reverse breakdown voltage I R =2.5μA Forward voltage I F =1mA I F =10mA I F =50mA I F =150mA Reverse leakage current Symbol Min Typ Max Unit V (BR)R 75 V VF 0.715 0.855 1.000 1.250 V V R =75V V R =20V IR 2.5 0.025 μA Junction capacitance V R =0V, f=1.0MHz CT 2 pF Reverse recovery time I F =I R =10mA, I rr =0.1×I R , R L =100Ω t rr 4 nS REV:A QW-B0037 Page 1 COMCHIP SMD Switching Diode Arrays SMD Diodes Specialist ELECTRICAL CHARACTERISTIC CURVES (CDSV6-99BR-G) Fig.2 Reverse Characteristics 1 T A =150 OC 0.1 O T A =25 C T A =75 OC O T A =0 C 0.01 T A =-40 OC 0.001 0 0.5 1.5 1.0 I R , Instantaneous Reverse Current (nA) I F , Instantaneous Forward Current (A) Fig.1 Forward Characteristics 10000 O O 100 T A =75 C O T A =25 C 10 T A =0 OC 1 O T A =-40 C 0.1 0 20 40 60 80 100 V R , Instantaneous Reverse Voltage (V) V F , Instantaneous Forward Voltage (V) Fig.3 Capacitance Between Terminals Characteristics Fig.4 Power Derating Curve 2.0 300 f=1MHz P D , Power Dissipation (mW) C T , Capacitance Between Terminals (pF) T A =125 C O T A =150 C 1000 1.6 1.2 0.8 0.4 0 250 200 150 100 50 0 0 10 20 30 V R , Reverse Voltage (V) 40 0 25 50 75 100 125 150 T A , Ambient Temperature ( OC) REV:A QW-B0037 Page 2