SMD Efficient Fast Recovery Rectifiers CEFA201-G Thru. CEFA203-G Reverse Voltage: 50 to 200 Volts Forward Current: 2.0 Amp RoHS Device Features DO-214AC (SMA) -Ideal for surface mount applications. -Easy pick and place. 0.180(4.57) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.110(2.79) 0.086(2.18) 0.067(1.70) 0.051(1.29) -Super fast recovery time for high efficient. -Built-in strain relief. -Low forward voltage drop. 0.209(5.31) 0.185(4.70) Mechanical data -Case: JEDEC DO-214AC, molded plastic. 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) -Terminals: solderable per MIL-STD-750, method 2026. 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10) -Polarity: Color band denotes cathode end. -Approx. weight: 0.063 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Parameter Symbol CEFA201-G CEFA202-G CEFA203-G Units Max. repetitive peak reverse voltage VRRM 50 100 200 V Max. DC blocking voltage VDC 50 100 200 V Max. RMS voltage VRMS 35 70 140 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 50 A Max. average forward current IO 2.0 A Max. instantaneous forward voltage at 2.0A VF 0.92 V Reverse recovery time Trr 25 nS IR 5.0 100 μA RθJL 55 TJ 150 O C TSTG -55 to +150 O C Max. DC reverse current at TA=25 rated DC blocking voltage TA=100 Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature O C C O O C/W Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper2 pad area. REV:A Page 1 QW-BE002 Comchip Technology CO., LTD. SMD Efficient Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (CEFA201-G thru CEFA203-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 100 10 1 F o r w a rd C u rren t(A) Rever s e C urr e n t (μA ) 10 O TJ=125 C 1 TJ=75 OC TJ=25 OC 0.1 0.01 0.1 O TJ=25 C Pulse width 300μS 4% duty cycle 0.01 0.001 0 20 40 60 80 100 120 0 140 0.4 0.8 1.6 1.2 2.0 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig.3 Current Derating Curve Fig.4 Non-repetitive Forward Surge Current 2.8 50 Peak F or ward Surge C ur re nt A ( ) O A v e ra ge d F o r ward C u rr e n t(A ) 2.4 2.0 1.6 1.2 0.8 Single phase Half wave 60Hz 0.4 TJ=25 C 8.3ms single half sine wave, JEDEC method 40 30 20 10 0 0 0 25 50 75 100 125 Ambient Temperature ( 150 O 175 1 10 100 Number of Cycles at 60Hz C) Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 50Ω NONINDUCTIVE trr 10Ω NONINDUCTIVE +0.5A (+) 25Vdc (approx.) (-) (-) D.U.T. 1Ω NONINDUCTIVE PULSE GENERATOR (NOTE 2) 0 -0.25A (+) OSCILLLISCOPE (NOTE 1) NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF. 2. Rise time=10ns max., input impedance=50Ω. -1.0A 1cm Set time base for 50 / 10nS / cm REV:A Page 2 QW-BE002 Comchip Technology CO., LTD.