CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C405FP Issued Date : 2008.12.01 Revised Date : 2009.04.20 Page No. : 1/8 BVDSS : 500V RDS(ON) : 0.48Ω MTN13N50FP ID : 13A Description The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • BVDSS=550V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Symbol Outline MTN13N50FP G：Gate D：Drain S：Source MTN13N50FP TO-220FP G D S CYStek Product Specification Spec. No. : C405FP Issued Date : 2008.12.01 Revised Date : 2009.04.20 Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=3mH, ID=13Amps, VDD=50V Avalanche Current (Note 2) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature Symbol Limits Unit VDS VGS ID ID IDM EAS IAR dv/dt 500 ±30 13* 8* 52* 250 13 3.0 V V A A A mJ A V/ns TL 300 °C TPKG 260 °C Pd 48 0.4 -55~+150 W W/°C °C Tj, Tstg *Drain current limited by maximum junction temperature Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=10A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN13N50FP Symbol Rth,j-c Rth,j-a Value 2.58 100 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405FP Issued Date : 2008.12.01 Revised Date : 2009.04.20 Page No. : 3/8 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Static BVDSS 500 BVDSS ∆BVDSS/∆Tj VGS(th) 2.0 *GFS IGSS IDSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - Typ. Max. Unit Test Conditions 550 0.5 15 0.38 4.0 ±100 20 200 0.48 V V V/°C V S nA μA μA Ω VGS=0, ID=250μA VGS=0, ID=250μA, Tj=150°C Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=6.5A VGS=±30 VDS =500V, VGS =0 VDS =400V, VGS =0, Tj=125°C VGS =10V, ID=7.8A 40 10 15 16 30 48 34 2222 180 17 - nC ID=13A, VDD=250V, VGS=10V ns VDD=250V, ID=13A, VGS=10V, RG=9.1Ω pF VGS=0V, VDS=25V, f=1MHz 392 3529 1.5 13 52 - V IS=13A, VGS=0V A VD=VG=0, VS=1.3V ns nC VGS=0, IF=13A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN13N50FP MTN13N50FP Package TO-220FP (RoHS compliant) Shipping Marking 50 pcs/tube, 20 tubes/box, 4 boxes / carton 13N50 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405FP Issued Date : 2008.12.01 Revised Date : 2009.04.20 Page No. : 4/8 Characteristic Curves MTN13N50FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405FP Issued Date : 2008.12.01 Revised Date : 2009.04.20 Page No. : 5/8 Characteristic Curves(Cont.) MTN13N50FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405FP Issued Date : 2008.12.01 Revised Date : 2009.04.20 Page No. : 6/8 Test Circuit and Waveforms MTN13N50FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405FP Issued Date : 2008.12.01 Revised Date : 2009.04.20 Page No. : 7/8 Test Circuit and Waveforms(Cont.) MTN13N50FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C405FP Issued Date : 2008.12.01 Revised Date : 2009.04.20 Page No. : 8/8 TO-220FP Dimension Marking: Device Name 13N50 □□□□ Date Code Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220FP Plastic Package CYStek Package Code: FP *: Typical Inches Min. Max. 0.169 0.185 0.051 REF 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.069 0.059 0.020 0.030 DIM A A1 A2 A3 b b1 b2 c Millimeters Min. Max. 4.300 4.700 1.300 REF 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F Φ L L1 L2 Inches Min. Max. 0.408 0.392 0.583 0.598 0.100 TYP 0.106 REF 0.138 REF 1.102 1.118 0.067 0.075 0.075 0.083 Millimeters Min. Max. 10.360 9.960 14.800 15.200 2.540 TYP 2.700 REF 3.500 REF 28.000 28.400 1.700 1.900 1.900 2.100 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN13N50FP CYStek Product Specification