CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN4N60FP Spec. No. : C408FP Issued Date : 2008.09.02 Revised Date :2009.04.20 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS(ON) : 2.2Ω ID : 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • BVDSS=650V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Open Framed Power Supply • Adapter • STB Symbol Outline MTN4N60FP G：Gate D：Drain S：Source MTN4N60FP TO-220FP G D S CYStek Product Specification Spec. No. : C408FP Issued Date : 2008.09.02 Revised Date :2009.04.20 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS ID ID IDM EAS IAR EAR dv/dt 600 ±30 4* 2.4* 16* 58.6 4 3.3 4.5 V V A A A mJ A mJ V/ns TL 300 °C TPKG 260 °C Pd 33 0.26 -55~+150 W W/°C °C Tj, Tstg *Drain current limited by maximum junction temperature Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=4A, VDD=50V, L=8mH, VG=10V, starting TJ=+25℃. 3. ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN4N60FP Symbol Rth,j-c Rth,j-a Value 3.79 62.5 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C408FP Issued Date : 2008.09.02 Revised Date :2009.04.20 Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 600 2.0 - 650 0.6 700 10 - 4.0 ±100 1 10 2.2 V V V/°C V V S nA μA μA Ω VGS=0, ID=250μA, Tj=25℃ VGS=0, ID=250μA, Tj=150℃ Reference to 25°C, ID=250μA VGS=0, ID=4A VDS = VGS, ID=250μA VDS =15V, ID=4A VGS=±30 VDS =600V, VGS =0 VDS =480V, VGS =0, Tj=125°C VGS =10V, ID=2.4A 18.5 3.98 8.19 10.8 6.9 25.7 9.6 810 73 9 - nC ID=4A, VDD=300V, VGS=10V ns VDD=300V, ID=4A, VGS=10V, RG=10Ω, RD=75Ω pF VGS=0V, VDS=25V, f=1MHz 452 26.5 1.5 4 16 - V IS=4A, VGS=0V Static BVDSS BVDSS ∆BVDSS/∆Tj BVDS VGS(th) *GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - A ns μC VGS=0, IF=4A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN4N60FP MTN4N60FP Package TO-220FP (RoHS compliant) Shipping Marking 50 pcs/tube, 20 tubes/box, 4 boxes / carton 4N60 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C408FP Issued Date : 2008.09.02 Revised Date :2009.04.20 Page No. : 4/9 Characteristic Curves MTN4N60FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C408FP Issued Date : 2008.09.02 Revised Date :2009.04.20 Page No. : 5/9 Characteristic Curves(Cont.) MTN4N60FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C408FP Issued Date : 2008.09.02 Revised Date :2009.04.20 Page No. : 6/9 Characteristic Curves(Cont.) MTN4N60FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C408FP Issued Date : 2008.09.02 Revised Date :2009.04.20 Page No. : 7/9 Test Circuits and Waveforms MTN4N60FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C408FP Issued Date : 2008.09.02 Revised Date :2009.04.20 Page No. : 8/9 Test Circuits and Waveforms(Cont.) MTN4N60FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C408FP Issued Date : 2008.09.02 Revised Date :2009.04.20 Page No. : 9/9 TO-220FP Dimension Marking: Device Name 4N60 □□□□ Date Code Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Inches Min. Max. 0.169 0.185 0.051 REF 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.069 0.059 0.020 0.030 DIM A A1 A2 A3 b b1 b2 c Millimeters Min. Max. 4.300 4.700 1.300 REF 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F Φ L L1 L2 Inches Min. Max. 0.408 0.392 0.583 0.598 0.100 TYP 0.106 REF 0.138 REF 1.102 1.118 0.067 0.075 0.075 0.083 Millimeters Min. Max. 10.360 9.960 14.800 15.200 2.540 TYP 2.700 REF 3.500 REF 28.000 28.400 1.700 1.900 1.900 2.100 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN4N60FP CYStek Product Specification