TI LF411_11

LF411
LF411 Low Offset, Low Drift JFET Input Operational Amplifier
Literature Number: SNOSBH6C
LF411
Low Offset, Low Drift JFET Input Operational Amplifier
General Description
Features
These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input offset voltage drift. They require low supply
current yet maintain a large gain bandwidth product and fast
slew rate. In addition, well matched high voltage JFET input
devices provide very low input bias and offset currents. The
LF411 is pin compatible with the standard LM741 allowing
designers to immediately upgrade the overall performance of
existing designs.
These amplifiers may be used in applications such as high
speed integrators, fast D/A converters, sample and hold
circuits and many other circuits requiring low input offset
voltage and drift, low input bias current, high input impedance, high slew rate and wide bandwidth.
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Typical Connection
Connection Diagrams
Internally trimmed offset voltage:
Input offset voltage drift:
Low input bias current:
Low input noise current:
Wide gain bandwidth:
High slew rate:
Low supply current:
High input impedance:
Low total harmonic distortion:
Low 1/f noise corner:
Fast settling time to 0.01%:
0.5 mV(max)
10 µV/˚C(max)
50 pA
0.01 pA/√Hz
3 MHz(min)
10V/µs(min)
1.8 mA
1012Ω
≤0.02%
50 Hz
2 µs
Metal Can Package
00565505
Note: Pin 4 connected to case.
00565501
Top View
Order Number LF411ACH
or LF411MH/883 (Note 11)
See NS Package Number H08A
Dual-In-Line Package
Ordering Information
LF411XYZ
X indicates electrical grade
Y indicates temperature range
“M” for military
“C” for commercial
Z indicates package type
“H” or “N”
00565507
Top View
Order Number LF411ACN, LF411CN
See NS Package Number N08E
BI-FET II™ is a trademark of National Semiconductor Corporation.
© 2004 National Semiconductor Corporation
DS005655
www.national.com
LF411 Low Offset, Low Drift JFET Input Operational Amplifier
August 2000
LF411
Absolute Maximum Ratings (Note 1)
H Package
Tjmax
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
LF411A
LF411
± 22V
± 38V
± 18V
± 30V
Supply Voltage
Differential Input Voltage
θjA
N Package
150˚C
115˚C
162˚C/W (Still Air)
120˚C/W
65˚C/W (400
LF/min
Air Flow)
θ jC
Input Voltage Range
20˚C/W
Operating Temp.
± 19V
(Note 2)
± 15V
Range
Output Short Circuit
(Note 4)
(Note 4)
Storage Temp.
Duration
Continuous Continuous
−65˚C≤TA≤150˚C −65˚C≤TA≤150˚C
Range
Lead Temp.
H Package
N Package
(Soldering,
10 sec.)
670 mW
670 mW
ESD Tolerance
Power Dissipation
(Notes 3, 10)
DC Electrical Characteristics
Symbol
Parameter
260˚C
260˚C
Rating to be determined.
(Note 5)
Conditions
LF411A
Min
LF411
Typ
Max
Min
Units
Typ
Max
VOS
Input Offset Voltage
RS=10 kΩ, TA=25˚C
0.3
0.5
0.8
2.0
mV
∆VOS/∆T
Average TC of Input
RS=10 kΩ (Note 6)
7
10
7
20
µV/˚C
Offset Voltage
IOS
Input Offset Current
(Note 6)
VS= ± 15V
Tj=25˚C
(Notes 5, 7)
Tj=70˚C
VS= ± 15V
Tj=25˚C
(Notes 5, 7)
Tj=70˚C
4
4
nA
Tj=125˚C
50
50
nA
25
Input Bias Current
RIN
AVOL
VO
VCM
Input Resistance
Tj=25˚C
25
2
Tj=125˚C
IB
100
25
50
200
50
1012
100
pA
2
nA
25
nA
200
pA
1012
Ω
200
V/mV
Large Signal Voltage
VS= ± 15V, VO= ± 10V,
Gain
RL=2k, TA=25˚C
Over Temperature
25
200
15
200
V/mV
Output Voltage Swing
VS= ± 15V, RL=10k
± 12
± 16
± 13.5
± 12
± 11
± 13.5
V
50
Input Common-Mode
Voltage Range
CMRR
Common-Mode
PSRR
Supply Voltage
200
25
+19.5
−16.5
+14.5
V
−11.5
V
RS≤10k
80
100
70
100
dB
(Note 8)
80
100
70
100
dB
Rejection Ratio
Rejection Ratio
IS
Supply Current
1.8
AC Electrical Characteristic
Symbol
Parameter
2.8
1.8
3.4
mA
(Note 5)
Conditions
LF411A
Min
Typ
LF411
Max
Min
Typ
Units
Max
SR
Slew Rate
VS= ± 15V, TA=25˚C
10
15
8
15
V/µs
GBW
Gain-Bandwidth Product
VS= ± 15V, TA=25˚C
3
4
2.7
4
MHz
en
Equivalent Input Noise Voltage
TA=25˚C, RS=100Ω,
f=1 kHz
in
Equivalent Input Noise Current
TA=25˚C, f=1 kHz
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2
25
25
0.01
0.01
Symbol
Parameter
LF411
AC Electrical Characteristic
(Note 5) (Continued)
Conditions
LF411A
Min
THD
Total Harmonic Distortion
AV=+10, RL=10k,
VO=20 Vp-p,
BW=20 Hz−20 kHz
Typ
LF411
Max
Min
< 0.02
Typ
Units
Max
< 0.02
%
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 3: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θjA.
Note 4: These devices are available in both the commercial temperature range 0˚C≤TA≤70˚C and the military temperature range −55˚C≤TA≤125˚C. The
temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an “M”
indicates the military temperature range. The military temperature range is available in “H” package only.
Note 5: Unless otherwise specified, the specifications apply over the full temperature range and for VS= ± 20V for the LF411A and for VS= ± 15V for the LF411. VOS,
IB, and IOS are measured at VCM=0.
Note 6: The LF411A is 100% tested to this specification. The LF411 is sample tested to insure at least 90% of the units meet this specification.
Note 7: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, PD. Tj=TA+θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is
recommended if input bias current is to be kept to a minimum.
Note 8: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice, from
± 15V to ± 5V for the LF411 and from ± 20V to ± 5V for the LF411A.
Note 9: RETS 411X for LF411MH and LF411MJ military specifications.
Note 10: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate
outside guaranteed limits.
Typical Performance Characteristics
Input Bias Current
Input Bias Current
00565511
00565512
3
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LF411
Typical Performance Characteristics
(Continued)
Positive Common-Mode
Input Voltage Limit
Supply Current
00565513
00565514
Negative Common-Mode
Input Voltage Limit
Positive Current Limit
00565515
00565516
Negative Current Limit
Output Voltage Swing
00565517
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00565518
4
LF411
Typical Performance Characteristics
(Continued)
Output Voltage Swing
Gain Bandwidth
00565519
00565520
Bode Plot
Slew Rate
00565522
00565521
Undistorted Output
Voltage Swing
Distortion vs Frequency
00565523
00565524
5
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LF411
Typical Performance Characteristics
(Continued)
Open Loop Frequency
Response
Common-Mode Rejection
Ratio
00565525
00565526
Power Supply
Rejection Ratio
Equivalent Input Noise
Voltage
00565527
00565528
Open Loop Voltage Gain
Output Impedance
00565529
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00565530
6
LF411
Typical Performance Characteristics
(Continued)
Inverter Settling Time
00565531
Pulse Response
RL=2 kΩ, CL10 pF
Large Signal Inverting
Small Signal Inverting
00565541
00565539
Large Signal Non-Inverting
Small Signal Non-Inverting
00565542
00565540
7
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LF411
Pulse Response RL=2 kΩ, CL10 pF
(Continued)
Current Limit (RL=100Ω)
00565543
The LF411 will drive a 2 kΩ load resistance to ± 10V over the
full temperature range. If the amplifier is forced to drive
heavier load currents, however, an increase in input offset
voltage may occur on the negative voltage swing and finally
reach an active current limit on both positive and negative
swings.
Precautions should be taken to ensure that the power supply
for the integrated circuit never becomes reversed in polarity
or that the unit is not inadvertently installed backwards in a
socket as an unlimited current surge through the resulting
forward diode within the IC could cause fusing of the internal
conductors and result in a destroyed unit.
As with most amplifiers, care should be taken with lead
dress, component placement and supply decoupling in order
to ensure stability. For example, resistors from the output to
an input should be placed with the body close to the input to
minimize “pick-up” and maximize the frequency of the feedback pole by minimizing the capacitance from the input to
ground.
Application Hints
The LF411 series of internally trimmed JFET input op amps
( BI-FET II™ ) provide very low input offset voltage and
guaranteed input offset voltage drift. These JFETs have
large reverse breakdown voltages from gate to source and
drain eliminating the need for clamps across the inputs.
Therefore, large differential input voltages can easily be
accommodated without a large increase in input current. The
maximum differential input voltage is independent of the
supply voltages. However, neither of the input voltages
should be allowed to exceed the negative supply as this will
cause large currents to flow which can result in a destroyed
unit.
Exceeding the negative common-mode limit on either input
will force the output to a high state, potentially causing a
reversal of phase to the output. Exceeding the negative
common-mode limit on both inputs will force the amplifier
output to a high state. In neither case does a latch occur
since raising the input back within the common-mode range
again puts the input stage and thus the amplifier in a normal
operating mode.
Exceeding the positive common-mode limit on a single input
will not change the phase of the output; however, if both
inputs exceed the limit, the output of the amplifier may be
forced to a high state.
The amplifier will operate with a common-mode input voltage
equal to the positive supply; however, the gain bandwidth
and slew rate may be decreased in this condition. When the
negative common-mode voltage swings to within 3V of the
negative supply, an increase in input offset voltage may
occur.
The LF411 is biased by a zener reference which allows
normal circuit operation on ± 4.5V power supplies. Supply
voltages less than these may result in lower gain bandwidth
and slew rate.
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A feedback pole is created when the feedback around any
amplifier is resistive. The parallel resistance and capacitance
from the input of the device (usually the inverting input) to AC
ground set the frequency of the pole. In many instances the
frequency of this pole is much greater than the expected
3 dB frequency of the closed loop gain and consequently
there is negligible effect on stability margin. However, if the
feedback pole is less than approximately 6 times the expected 3 dB frequency, a lead capacitor should be placed
from the output to the input of the op amp. The value of the
added capacitor should be such that the RC time constant of
this capacitor and the resistance it parallels is greater than or
equal to the original feedback pole time constant.
8
LF411
Typical Applications
High Speed Current Booster
00565509
PNP=2N2905
NPN=2N2219 unless noted
TO-5 heat sinks for Q6-Q7
9
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LF411
Typical Applications
(Continued)
10-Bit Linear DAC with No VOS Adjust
00565532
where AN=1 if the AN digital input is high
AN=0 if the AN digital input is low
Single Supply Analog Switch with Buffered Output
00565533
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10
LF411
Simplified Schematic
00565506
Note 11: Available per JM38510/11904
Detailed Schematic
00565534
11
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LF411
Physical Dimensions
inches (millimeters) unless otherwise noted
Metal Can Package (H)
Order Number LF411MH/883 or LF411ACH
NS Package Number H08A
Molded Dual-In-Line Package (N)
Order Number LF411ACN or LF411CN
NS Package Number N08E
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12
LF411 Low Offset, Low Drift JFET Input Operational Amplifier
Notes
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