2N3906 2N3906 Si-Epitaxial-Planar Switching Transistors Si-Epitaxial-Planar Schalttransistoren PNP PNP Version 2006-09-12 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) 2N3906 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 40 V Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 40 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (dc) - IC 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. 60 80 100 60 30 – – – – – – – 300 – – – – – – 0.25 V 0.40 V 0.65 V – – – 0.85 V 0.95 V DC current gain – Kollektor-Basis-Stromverhältnis 2) - IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 50 mA, 100 mA, - VCE VCE VCE VCE VCE = = = = = 1 1 1 1 1 V V V V V hFE hFE hFE hFE hFE Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - VCEsat - VCEsat Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA 1 2 - VBEsat - VBEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 2N3906 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - ICBX – – 50 nA - IEBV – –- 50 nA fT 250 MHz – – CCBO – – 4.5 pF CEBO – – 10 pf F – – 4 dB - VCC = 3 V, - VBE = 0.5 V - IC = 10 mA, - IB1 = 1mA td – – 35 ns tr – – 35 ns - VCC = 3 V, - IC = 10 mA, - IB1 = - IB2 = 1 mA ts – – 225 ns tf – – 75 ns Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 30 V, - VEB = 3 V Emitter-Base cutoff current – Emitter-Basis-Reststrom - VCE = 30 V, - VEB = 3 V Gain-Bandwidth Product – Transitfrequenz - IC = 10 mA, - VCE = 20 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 100 µA, RG = 1 kΩ, f = 1 kHz Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren 1 2 RthA < 200 K/W 1) 2N3904 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG