BSV 52 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.9 Dimensions / Maße in mm 1=B 2=E 3=C NPN SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BSV 52 Collector-Emitter-voltage B open VCE0 12 V Collector-Base-voltage E open VCB0 20 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 100 mA Junction temp. – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 20 V ICB0 – – 400 nA IE = 0, VCB = 20 V, Tj = 125/C ICB0 – – 30 :A IEB0 – – 100 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 4 V 1 Collector saturation volt. – Kollektor-Sättigungsspg. ) 1 IC = 10 mA, IB = 0.3 mA VCEsat – – 300 mV IC = 10 mA, IB = 1 mA VCEsat – – 250 mV IC = 50 mA, IB = 5 mA VCEsat – – 400 mV ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 18 01.11.2003 Switching Transistors BSV 52 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) IC = 10 mA, IB = 1 mA VBEsat 700 mV – 850 mV IC = 50 mA, IB = 5 mA VBEsat – – 1.2 V DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 1 V, IC = 1 mA hFE 25 – – VCE = 1 V, IC = 10 mA hFE 40 – 120 VCE = 1 V, IC = 50 mA hFE 25 – – fT 400 MHz 500 MHz – – – 4 pF CEB0 – – 4.5 pF turn-on time ton – – 10 ns delay time td – – 4 ns tr – – 6 ns toff – – 20 ns ts – – 10 ns tf – – 10 ns Gain-Bandwidth Product – Transitfrequenz VCE = 10 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 5 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 1 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten rise time turn-off time storage time ICon = 10 mA IBon = 3 mA - IBoff = 1.5 mA fall time Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Marking - Stempelung RthA 420 K/W 2) BSV 52 = B2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 19