S15AYD2 ... S15MYD2 S15AYD2 ... S15MYD2 Surface Mount Silicon Rectifier Diodes – Single Diode Silizium-Gleichrichterdioden für die Oberflächenmontage– Einzeldiode Version 2011-05-25 1.2 4.5 10.25 ± 0.2 Nominal current Nennstrom ±0.5 4 Repetitive peak reverse voltage Periodische Spitzensperrspannung Type Typ 1 2 1.3 TO-263AB D2PAK Weight approx. Gewicht ca. 5.08 1.6 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 1 2/4 3 Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ 50...1000 V Plastic case Kunststoffgehäuse 3 0.8 0.4 15 A Grenz- und Kennwerte Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) Forward voltage Durchlass-Spannung VF [V] Tj = 25°C IF = 5 A IF = 15 A S15AYD2 50 50 < 1.0 < 1.3 S15BYD2 100 100 < 1.0 < 1.3 S15DYD2 200 200 < 1.0 < 1.3 S15GYD2 400 400 < 1.0 < 1.3 S15JYD2 600 600 < 1.0 < 1.3 S15KYD2 800 800 < 1.0 < 1.3 S15MYD2 1000 1000 < 1.0 < 1.3 Max. average forward current, R-load Dauergrenzstrom mit R-Last TC = 100°C IFAV 15 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 80 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 400/450 A 1) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 800 A2s 1) Tj -50...+150°C -50...+175°C Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 TS Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 S15AYD2 ... S15MYD2 Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C VR = VRRM Tj = 125°C VR = VRRM Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse IR IR < 10 µA < 100 µA RthC < 2.1 K/W 10 2 120 [%] [A] 100 10 80 Tj = 125°C Tj = 25°C 1 60 40 10-1 20 IF IFAV 0 -2 0 TC 50 100 150 [°C] 0.4 Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur 2 200a-(5a-0.95v) 10 http://www.diotec.com/ VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) © Diotec Semiconductor AG