EN29GL256H/L EN29GL256 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Write operation status bits indicate program and erase operation completion • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Support for CFI (Common Flash Interface) • High performance - Access times as fast as 90 ns • Persistent methods of Advanced Sector Protection • VIO Input/Output 1.65 to 3.6 volts - All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC • WP#/ACC input • 8-word/16-byte page read buffer - Accelerates programming time (when VHH is applied) for greater throughput during system production • 32-word/64-byte write buffer reduces overall programming time for multiple-word updates - Protects first or last sector regardless of sector protection settings • Secured Silicon Sector region - 128-word/256-byte sector for permanent, secure identification through an 8-word/16byte random Electronic Serial Number - Can be programmed and locked at the factory or by the customer • Hardware reset input (RESET#) resets device • Ready/Busy# output (RY/BY#) detects program or erase cycle completion • Minimum 100K program/erase endurance cycles. • Uniform 64Kword/128KByte Sector Architecture Two hundred fifty-six sectors • Package Options - 56-pin TSOP - 64-ball 11mm x 13mm BGA • Suspend and Resume commands for Program and Erase operations • Industrial Temperature Range. GENERAL DESCRIPTION The EN29GL256 offers a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance and lower power consumption. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 1 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L CONNECTION DIAGRAMS Figure 1. 56-pin Standard TSOP (Top View) A23 A22 A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# A21 WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 RFU RFU 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 RFU RFU A16 BYTE# Vss DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 Vcc DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss CE# A0 RFU VIO Note: RFU= Reserved for future use This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Figure 2. 64-ball Ball Grid Array (Top View, Balls Facing Down) A8 B8 C8 RFU A22 A23 A7 B7 C7 A13 A12 A6 E8 F8 G8 H8 VSS RFU RFU RFU D7 E7 F7 G7 H7 A14 A15 A16 B6 C6 D6 E6 F6 G6 H6 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 A5 B5 C5 D5 E5 F5 G5 H5 WE# RESET# A21 A19 DQ5 DQ12 VCC DQ4 A4 B4 C4 D4 E4 F4 G4 H4 WP# / ACC A18 A20 DQ2 DQ10 DQ11 DQ3 A3 B3 C3 D3 E3 F3 G3 H3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A2 B2 C2 D2 E2 F2 G2 H2 A3 A4 A2 A1 A0 CE# OE# VSS A1 B1 C1 D1 E1 F1 G1 H1 RFU RFU RFU RFU RFU VIO RFU RFU RY / BY# D8 VIO BYTE# DQ15 / A -1 VSS Note: RFU= Reserved for future use This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L TABLE 1. PIN DESCRIPTION Pin Name FIGURE 3. LOGIC DIAGRAM Function EN29GL256 A23–A0 A23–A0 DQ0-DQ14 Data input/output. DQ15 / A-1 DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) CE# Chip Enable OE# Output Enable RESET# Hardware Reset Pin RY/BY# Ready/Busy Output WE# Write Enable Vcc Supply Voltage (2.7-3.6V) Vss Ground VIO V I/O Input. BYTE# Byte/Word mode selection WP#/ACC RFU DQ0 – DQ15 (A-1) A0 – A23 CE# OE# WE# Reset# WP#/ACC Byte# VI O RY/BY# Write Protect / Acceleration Pin (WP# has an internal pull-up; when unconnected, WP# is at VIH.) Reserved for future use. Not Connected to anything This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Table 2. PRODUCT SELECTOR GUIDE Product Number EN29GL256 Full Voltage Range: Vcc=2.7 – 3.6 V VIO=1.65 – 3.6 V Speed Option -90 Max Access Time, ns (tacc) 90 Max Page Read Access, ns(tpacc) 25 Max CE# Access, ns (tce) 90 Max OE# Access, ns (toe) 35 BLOCK DIAGRAM RY/BY# Vcc Vss VIO DQ0-DQ15 (A-1) Blo ck Protect Switches Erase Voltage Gen erator Inp ut/Output Buffers State Control WE# Command Register Program Voltage Generator Chip Enable Output Enable Logic CE# OE# Vcc Detector Timer Ad dress Latch STB STB Data Latch Y-Decoder Y-Gating X-Decoder Cell Matrix A0 -A23 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Product Overview EN29GL256 is 256 Mb, 3.0-volt-only, page mode Flash devices optimized for today’s embedded designs that demand a large storage array and rich functionality. This product offers uniform 64 Kword (128 KB) uniform sectors and feature V I/O control, allowing control and I/O signals to operate from 1.65 V to VCC. Additional features include: • Single word programming or a 32-word buffer for an increased programming speed • Program Suspend/Resume and Erase Suspend/Resume • Advanced Sector Protection methods for protecting sectors as required • 128 words/256 bytes of Secured Silicon area for storing customer and factory secured information. The Secured Silicon Sector is One Time Programmable. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Table 3. Sector / Persistent Protection Sector Group Address Tables PPB Group A23-A18 Sector PPB 0 PPB 1 PPB 2 SA0 000000 PPB 3 PPB 4 PPB 5 PPB 6 PPB 7 PPB 8 PPB 9 PPB 10 PPB 11 PPB 12 PPB 13 000001 000010 000011 000100 000101 000110 000111 001000 001001 001010 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Sector Size (Kbytes / Kwords) 128/64 Address Range (h) Word mode (x16) 000000–00FFFF SA1 128/64 010000–01FFFF SA2 128/64 020000–02FFFF SA3 128/64 030000–03FFFF SA4 128/64 040000–04FFFF SA5 128/64 050000–05FFFF SA6 128/64 060000–06FFFF SA7 128/64 070000–07FFFF SA8 128/64 080000–08FFFF SA9 128/64 090000–09FFFF SA10 128/64 0A0000–0AFFFF SA11 128/64 0B0000–0BFFFF SA12 128/64 0C0000–0CFFFF SA13 128/64 0D0000–0DFFFF SA14 128/64 0E0000–0EFFFF SA15 128/64 0F0000–0FFFFF SA16 128/64 100000–10FFFF SA17 128/64 110000–11FFFF SA18 128/64 120000–12FFFF SA19 128/64 130000–13FFFF SA20 128/64 140000–14FFFF SA21 128/64 150000–15FFFF SA22 128/64 160000–16FFFF SA23 128/64 170000–17FFFF SA24 128/64 180000–18FFFF SA25 128/64 190000–19FFFF SA26 128/64 1A0000–1AFFFF SA27 128/64 1B0000–1BFFFF SA28 128/64 1C0000–1CFFFF SA29 128/64 1D0000–1DFFFF SA30 128/64 1E0000–1EFFFF SA31 128/64 1F0000–1FFFFF SA32 128/64 200000–20FFFF SA33 128/64 210000–21FFFF SA34 128/64 220000–22FFFF SA35 128/64 230000–23FFFF SA36 128/64 240000–24FFFF SA37 128/64 250000–25FFFF SA38 128/64 260000–26FFFF SA39 128/64 270000–27FFFF SA40 128/64 280000–28FFFF 7 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L PPB 14 PPB 15 PPB 16 PPB 17 PPB 18 PPB 19 PPB 20 PPB 21 PPB 22 PPB 23 001011 001100 001101 001110 001111 010000 010001 010010 010011 010100 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. SA41 128/64 290000–29FFFF SA42 128/64 2A0000–2AFFFF SA43 128/64 2B0000–2BFFFF SA44 128/64 2C0000–2CFFFF SA45 128/64 2D0000–2DFFFF SA46 128/64 2E0000–2EFFFF SA47 128/64 2F0000–2FFFFF SA48 128/64 300000–30FFFF SA49 128/64 310000–31FFFF SA50 128/64 320000–32FFFF SA51 128/64 330000–33FFFF SA52 128/64 340000–34FFFF SA53 128/64 350000–35FFFF SA54 128/64 360000–36FFFF SA55 128/64 370000–37FFFF SA56 128/64 380000–38FFFF SA57 128/64 390000–39FFFF SA58 128/64 3A0000–3AFFFF SA59 128/64 3B0000–3BFFFF SA60 128/64 3C0000–3CFFFF SA61 128/64 3D0000–3DFFFF SA62 128/64 3E0000–3EFFFF SA63 128/64 3F0000–3FFFFF SA64 128/64 400000–40FFFF SA65 128/64 410000–41FFFF SA66 128/64 420000–42FFFF SA67 128/64 430000–43FFFF SA68 128/64 440000–44FFFF SA69 128/64 450000–45FFFF SA70 128/64 460000–46FFFF SA71 128/64 470000–47FFFF SA72 128/64 480000–48FFFF SA73 128/64 490000–49FFFF SA74 128/64 4A0000–4AFFFF SA75 128/64 4B0000–4BFFFF SA76 128/64 4C0000–4CFFFF SA77 128/64 4D0000–4DFFFF SA78 128/64 4E0000–4EFFFF SA79 128/64 4F0000–4FFFFF SA80 128/64 500000–50FFFF SA81 128/64 510000–51FFFF SA82 128/64 520000–52FFFF SA83 128/64 530000–53FFFF 8 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L PPB 24 PPB 25 PPB 26 PPB 27 PPB 28 PPB 29 PPB 30 PPB 31 PPB 32 PPB 33 PPB 34 010101 010110 010111 011000 011001 011010 011011 011100 011101 011110 011111 SA84 128/64 540000–54FFFF SA85 128/64 550000–55FFFF SA86 128/64 560000–56FFFF SA87 128/64 570000–57FFFF SA88 128/64 580000–58FFFF SA89 128/64 590000–59FFFF SA90 128/64 5A0000–5AFFFF SA91 128/64 5B0000–5BFFFF SA92 128/64 5C0000–5CFFFF SA93 128/64 5D0000–5DFFFF SA94 128/64 5E0000–5EFFFF SA95 128/64 5F0000–5FFFFF SA96 128/64 600000–60FFFF SA97 128/64 610000–61FFFF SA98 128/64 620000–62FFFF SA99 128/64 630000–63FFFF SA100 128/64 640000–64FFFF SA101 128/64 650000–65FFFF SA102 128/64 660000–66FFFF SA103 128/64 670000–67FFFF SA104 128/64 680000–68FFFF SA105 128/64 690000–69FFFF SA106 128/64 6A0000–6AFFFF SA107 128/64 6B0000–6BFFFF SA108 128/64 6C0000–6CFFFF SA109 128/64 6D0000–6DFFFF SA110 128/64 6E0000–6EFFFF SA111 128/64 6F0000–6FFFFF SA112 128/64 700000–70FFFF SA113 128/64 710000–71FFFF SA114 128/64 720000–72FFFF SA115 128/64 730000–73FFFF SA116 128/64 740000–74FFFF SA117 128/64 750000–75FFFF SA118 128/64 760000–76FFFF SA119 128/64 770000–77FFFF SA120 128/64 780000–78FFFF SA121 128/64 790000–79FFFF SA122 128/64 7A0000–7AFFFF SA123 128/64 7B0000–7BFFFF SA124 128/64 7C0000–7CFFFF SA125 128/64 7D0000–7DFFFF SA126 128/64 7E0000–7EFFFF SA127 128/64 7F0000–7FFFFF This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 9 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L PPB 35 PPB 36 PPB 37 PPB 38 PPB 39 PPB 40 PPB 41 PPB 42 PPB 43 PPB 44 PPB 45 100000 100001 100010 100011 100100 100101 100110 100111 101000 101001 101010 SA128 128/64 800000–80FFFF SA129 128/64 810000–81FFFF SA130 128/64 820000–82FFFF SA131 128/64 830000–83FFFF SA132 128/64 840000–84FFFF SA133 128/64 850000–85FFFF SA134 128/64 860000–86FFFF SA135 128/64 870000–87FFFF SA136 128/64 880000–88FFFF SA137 128/64 890000–89FFFF SA138 128/64 8A0000–8AFFFF SA139 128/64 8B0000–8BFFFF SA140 128/64 8C0000–8CFFFF SA141 128/64 8D0000–8DFFFF SA142 128/64 8E0000–8EFFFF SA143 128/64 8F0000–8FFFFF SA144 128/64 900000–90FFFF SA145 128/64 910000–91FFFF SA146 128/64 920000–92FFFF SA147 128/64 930000–93FFFF SA148 128/64 940000–94FFFF SA149 128/64 950000–95FFFF SA150 128/64 960000–96FFFF SA151 128/64 970000–97FFFF SA152 128/64 980000–98FFFF SA153 128/64 990000–99FFFF SA154 128/64 9A0000–9AFFFF SA155 128/64 9B0000–9BFFFF SA156 128/64 9C0000–9CFFFF SA157 128/64 9D0000–9DFFFF SA158 128/64 9E0000–9EFFFF SA159 128/64 9F0000–9FFFFF SA160 128/64 A00000–A0FFFF SA161 128/64 A10000–A1FFFF SA162 128/64 A20000–A2FFFF SA163 128/64 A30000–A3FFFF SA164 128/64 A40000–A4FFFF SA165 128/64 A50000–A5FFFF SA166 128/64 A60000–A6FFFF SA167 128/64 A70000–A7FFFF SA168 128/64 A80000–A8FFFF SA169 128/64 A90000–A9FFFF SA170 128/64 AA0000–AAFFFF SA171 128/64 AB0000–ABFFFF This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 10 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L PPB 46 PPB 47 PPB 48 PPB 49 PPB 50 PPB 51 PPB 52 PPB 53 PPB 54 101011 101100 101101 101110 101111 110000 110001 110010 110011 PPB 55 110100 PPB 56 110101 SA172 128/64 AC0000–ACFFFF SA173 128/64 AD0000–ADFFFF SA174 128/64 AE0000–AEFFFF SA175 128/64 AF0000–AFFFFF SA176 128/64 B00000–B0FFFF SA177 128/64 B10000–B1FFFF SA178 128/64 B20000–B2FFFF SA179 128/64 B30000–B3FFFF SA180 128/64 B40000–B4FFFF SA181 128/64 B50000–B5FFFF SA182 128/64 B60000–B6FFFF SA183 128/64 B70000–B7FFFF SA184 128/64 B80000–B8FFFF SA185 128/64 B90000–B9FFFF SA186 128/64 BA0000–BAFFFF SA187 128/64 BB0000–BBFFFF SA188 128/64 BC0000–BCFFFF SA189 128/64 BD0000–BDFFFF SA190 128/64 BE0000–BEFFFF SA191 128/64 BF0000–BFFFFF SA192 128/64 C00000–C0FFFF SA193 128/64 C10000–C1FFFF SA194 128/64 C20000–C2FFFF SA195 128/64 C30000–C3FFFF SA196 128/64 C40000–C4FFFF SA197 128/64 C50000–C5FFFF SA198 128/64 C60000–C6FFFF SA199 128/64 C70000–C7FFFF SA200 128/64 C80000–C8FFFF SA201 128/64 C90000–C9FFFF SA202 128/64 CA0000–CAFFFF SA203 128/64 CB0000–CBFFFF SA204 128/64 CC0000–CCFFFF SA205 128/64 CD0000–CDFFFF SA206 128/64 CE0000–CEFFFF SA207 128/64 CF0000–CFFFFF SA208 128/64 D00000–D0FFFF SA209 128/64 D10000–D1FFFF SA210 128/64 D20000–D2FFFF SA211 128/64 D30000–D3FFFF SA212 128/64 D40000–D4FFFF SA213 128/64 D50000–D5FFFF SA214 128/64 D60000–D6FFFF This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 11 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L PPB 57 PPB 58 PPB 59 PPB 60 PPB 61 PPB 62 PPB 63 PPB 64 PPB 65 110110 110111 111000 111001 111010 111011 111100 111101 111110 PPB 66 PPB 67 PPB 68 PPB 69 111111 SA215 128/64 D70000–D7FFFF SA216 128/64 D80000–D8FFFF SA217 128/64 D90000–D9FFFF SA218 128/64 DA0000–DAFFFF SA219 128/64 DB0000–DBFFFF SA9220 128/64 DC0000–DCFFFF SA221 128/64 DD0000–DDFFFF SA222 128/64 DE0000–DEFFFF SA223 128/64 DF0000–DFFFFF SA224 128/64 E00000–E0FFFF SA225 128/64 E10000–E1FFFF SA226 128/64 E20000–E2FFFF SA227 128/64 E30000–E3FFFF SA228 128/64 E40000–E4FFFF SA229 128/64 E50000–E5FFFF SA230 128/64 E60000–E6FFFF SA231 128/64 E70000–E7FFFF SA232 128/64 E80000–E8FFFF SA233 128/64 E90000–E9FFFF SA234 128/64 EA0000–EAFFFF SA235 128/64 EB0000–EBFFFF SA236 128/64 EC0000–ECFFFF SA237 128/64 ED0000–EDFFFF SA238 128/64 EE0000–EEFFFF SA239 128/64 EF0000–EFFFFF SA240 128/64 F00000–F0FFFF SA241 128/64 F10000–F1FFFF SA242 128/64 F20000–F2FFFF SA243 128/64 F30000–F3FFFF SA244 128/64 F40000–F4FFFF SA245 128/64 F50000–F5FFFF SA246 128/64 F60000–F6FFFF SA247 128/64 F70000–F7FFFF SA248 128/64 F80000–F8FFFF SA249 128/64 F90000–F9FFFF SA250 128/64 FA0000–FAFFFF SA251 128/64 FB0000–FBFFFF SA252 128/64 FC0000–FCFFFF SA253 128/64 FD0000–FDFFFF SA254 128/64 FE0000–FEFFFF SA255 128/64 FF0000–FFFFFF This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 12 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Table 4. Device OPERATING MODES 256M FLASH USER MODE TABLE Operation A0A23 DQ0DQ7 DQ8-DQ15 BYTE# BYTE# = V IH = V IL D OUT DQ8DQ14= D IN High-Z, DQ15 = D IN A-1 CE# OE# WE# RESET# WP#/ACC Read Write L L L H H L H H L/H (Note 1) A IN A IN Accelerated Program L H L H V HH A IN V cc X X Vcc±0.3V H X High-Z High-Z High-Z L X H X H X H L L/H L/H X X High-Z High-Z High-Z High-Z High-Z High-Z B CMOS Standby Output Disable Hardware Reset B B ±0.3V B B B B B B B D OUT D IN B B D IN B B B B B B B B B B B Notes: 1. Addresses are A23:A0 in word mode; A23:A-1 in byte mode. 2. If WP# = VIL, on the outermost sector remains protected. If WP# = VIH, the outermost sector is unprotected. WP# has an internal pull-up; when unconnected, WP# is at VIH. All sectors are unprotected when shipped from the factory (The Secured Silicon Sector can be factory protected depending on version ordered.) 3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm. Legend L = Logic Low = VIL, H = Logic High = VIH, VHH = 8.5–9.5V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 13 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 B B www.eonssi.com EN29GL256H/L USER MODE DEFINITIONS Word / Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0-DQ15 are active and controlled by CE# and OE#. If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0-DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8-DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. VIO Control The VIO allows the host system to set the voltage levels that the device generates and tolerates on all inputs and outputs (address, control, and DQ signals). VIO range is 1.65 to VCC. For example, a VIO of 1.65-3.6 volts allows for I/O at the 1.65 or 3.6 volt levels, driving and receiving signals to and from other 1.65 or 3.6 V devices on the same data bus. Read All memories require access time to output array data. In a read operation, data is read from one memory location at a time. Addresses are presented to the device in random order, and the propagation delay through the device causes the data on its outputs to arrive with the address on its inputs. The device defaults to reading array data after device power-up or hardware reset. To read data from the memory array, the system must first assert a valid address on A23-A0, while driving OE# and CE# to VIL. WE# must remain at VIH. All addresses are latched on the falling edge of CE#. Data will appear on DQ15-DQ0 after address access time (tACC), which is equal to the delay from stable addresses to valid output data.The OE# signal must be driven to VIL. Data is output on DQ15-DQ0 pins after the access time (tOE) has elapsed from the falling edge of OE#, assuming the tACC access time has been meet. Page Read Mode The device is capable of fast page mode read and is compatible with the page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. The page size of the device is 8 words/16 bytes. The appropriate page is selected by the higher address bits A23-A3. Address bits A2-A0 in word mode (A2 to A-1 in byte mode) determine the specific word within a page. The microprocessor supplies the specific word location. The random or initial page access is equal to tACC or tCE and subsequent page read accesses (as long as the locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# is deasserted and reasserted for a subsequent access, the access time is tACC or tCE. Fast page mode accesses are obtained by keeping the “read-page addresses” constant and changing the “intra-read page” addresses. Autoselect The Autoselect mode provides manufacturer ID, Device identification, and sector protection information, through identifier codes output from the internal register (separate from the memory array) on DQ7DQ0. The device only support to use autoselect command to access autoselect codes. It does not support to apply VID on address pin A9. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 14 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L • The Autoselect command sequence may be written to an address within a sector that is either in the read or erase-suspend-read mode. • The Autoselect command may not be written while the device is actively programming or erasing. • The system must write the reset command to return to the read mode (or erase-suspend-read mode if the sector was previously in Erase Suspend). • When verifying sector protection, the sector address must appear on the appropriate highest order address bits. The remaining address bits are don't care and then read the corresponding identifier code on DQ15-DQ0. Program/Erase Operations These devices are capable of several modes of programming and or erase operations which are described in detail in the following sections. During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is latched on the 1st rising edge of WE# or CE#. Note the following: • When the Embedded Program algorithm is complete, the device returns to the read mode. • The system can determine the status of the program operation by reading the DQ status bits. Refer to the Write Operation Status on page 25 for information on these status bits. • An “0” cannot be programmed back to a “1.” A succeeding read shows that the data is still “0.” • Only erase operations can convert a “0” to a “1.” • Any commands written to the device during the Embedded Program/Erase are ignored except the Suspend commands. • Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in progress. • A hardware reset and/or power removal immediately terminates the Program/Erase operation and the Program/Erase command sequence should be reinitiated once the device has returned to the read mode to ensure data integrity. • Programming is allowed in any sequence and across sector boundaries for single word programming operation. • Programming to the same word address multiple times without intervening erases is permitted. Single Word Programming Single word programming mode is one method of programming the Flash. In this mode, four Flash command write cycles are used to program an individual Flash address. The data for this programming operation could be 8 or 16-bits wide. While the single word programming method is supported by most devices, in general Single Word Programming is not recommended for devices that support Write Buffer Programming. When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by reading the DQ status bits. • During programming, any command (except the Suspend Program command) is ignored. • The Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in progress. • A hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity. • Programming to the same address multiple times continuously (for example, “walking” a bit within a word) is permitted. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 15 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Figure 4. Single Word Program This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 16 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Write Buffer Programming Write Buffer Programming allows the system to write a maximum of 32 words in one programming operation. This results in a faster effective word programming time than the standard “word” programming algorithms. The Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load command written at the Sector Address in which programming occurs. At this point, the system writes the number of “word locations minus 1” that are loaded into the page buffer at the Sector Address in which programming occurs. This tells the device how many write buffer addresses are loaded with data and therefore when to expect the “Program Buffer to Flash” confirm command. The number of locations to program cannot exceed the size of the write buffer or the operation aborts. (Number loaded = the number of locations to program minus 1. For example, if the system programs 6 address locations, then 05h should be written to the device.) The system then writes the starting address/data combination. This starting address is the first address/data pair to be programmed, and selects the “write-buffer-page” address. All subsequent address/data pairs must fall within the elected-write-buffer-page. The “write-buffer-page” is selected by using the addresses A23–A5. The “write-buffer-page” addresses must be the same for all address/data pairs loaded into the write buffer. (This means Write Buffer Programming cannot be performed across multiple “write-bufferpages.” This also means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts to load programming data outside of the selected “write-buffer-page”, the operation ABORTs.) After writing the Starting Address/Data pair, the system then writes the remaining address/data pairs into the write buffer. Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter is decremented for every data load operation. Also, the last data loaded at a location before the “Program Buffer to Flash” confirm command is the data programmed into the device. It is the software's responsibility to comprehend ramifications of loading a write-buffer location more than once. The counter decrements for each data load operation, NOT for each unique write-buffer-address location. Once the specified number of write buffer locations have been loaded, the system must then write the “Program Buffer to Flash” command at the Sector Address. Any other address/data write combinations abort the Write Buffer Programming operation. The Write Operation Status bits should be used while monitoring the last address location loaded into the write buffer. This eliminates the need to store an address in memory because the system can load the last address location, issue the program confirm command at the last loaded address location, and then check the write operation status at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be monitored to determine the device status during Write Buffer Programming. The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume commands. Upon successful completion of the Write Buffer Programming operation, the device returns to READ mode. The Write Buffer Programming Sequence is ABORTED under any of the following conditions: • Load a value that is greater than the page buffer size during the “Number of Locations to Program” step. • Write to an address in a sector different than the one specified during the Write-Buffer-Load command. • Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address” during the “write buffer data loading” stage of the operation. • Writing anything other than the Program to Buffer Flash Command after the specified number of “data load” cycles. The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 = TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable when a program This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 17 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L operation is in progress. Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices are capable of handling multiple write buffer programming operations on the same write buffer address range without intervening erases. Use of the write buffer is strongly recommended for programming when multiple words are to be programmed. Figure 5. Write Buffer Programming Operation This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 18 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Sector Erase Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. The Command Definitions table shows the address and data requirements for the sector erase command sequence. Once the sector erase operation has begun, only the Sector Erase Suspend command is valid. All other commands are ignored. If there are several sectors to be erased, Sector Erase Command sequences must be issued for each sector. That is, only a sector address can be specified for each Sector Erase command. Users must issue another Sector Erase command for the next sector to be erased after the previous one is completed. When the Embedded Erase algorithm is completed, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the “AC Characteristics” section for parameters, and to the Sector Erase Operations Timing diagram for timing waveforms. Figure 6. Sector Erase Operation START Write Erase Command Sequence Data Poll from System or Toggle Bit successfully completed Data =FFh? No Yes Erase Done This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 19 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Chip Erase Command Sequence Chip erase is a six-bus cycle operation as indicated by Table 13. These commands invoke the Embedded Erase algorithm, which does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory to an all zero data pattern prior to electrical erase. After a successful chip erase, all locations of the chip contain FFFFh. The system is not required to provide any controls or timings during these operations. When the Embedded Erase algorithm is complete, that sector returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7 or DQ6/DQ2. Refer to “Write Operation Status” for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that sector has returned to reading array data, to ensure the entire array is properly erased. Erase Suspend/Erase Resume Commands The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The sector address is required when writing this command. This command is valid only during the sector erase operation. The Sector Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Addresses are don’t-cares when writing the Sector Erase Suspend command. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6, and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. After an erase-suspended program operation is complete, the device returns to the erase-suspendread mode. The system can determine the status of the program operation using write operation status bits, just as in the standard program operation. In the erase-suspend-read mode, the system can also issue the Autoselect command sequence. Refer to Write Buffer Programming and the Autoselect for details. To resume the sector erase operation, the system must write the Erase Resume command. The address of the erase-suspended sector is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Program Suspend/Program Resume Commands The Program Suspend command allows the system to interrupt an embedded programming operation or a “Write to Buffer” programming operation so that data can read from any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the programming operation within 15 µs maximum (5 µs typical) and updates the status bits. Addresses are “don't-cares” when writing the Program Suspend command. After the programming operation has been suspended, the system can read array data from any nonsuspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any addresses not within a sector in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area, then user must use the proper command sequences to enter and exit this region. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 20 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L The system may also write the Autoselect Command Sequence when the device is in Program Suspend mode. The device allows reading Autoselect codes in the suspended sectors, since the codes are not stored in the memory array. When the device exits the Autoselect mode, the device reverts to Program Suspend mode, and is ready for another valid operation. After the Program Resume command is written, the device reverts to programming. The system can determine the status of the program operation using the write operation status bits, just as in the standard program operation. The system must write the Program Resume command (address bits are “don't care”) to exit the Program Suspend mode and continue the programming operation. Further writes of the Program Resume command are ignored. Another Program Suspend command can be written after the device has resumed programming. Accelerated Program Accelerated single word programming and write buffer programming operations are enabled through the WP#/ACC pin. This method is faster than the standard program command sequences. If the system asserts VHH on this input, the device automatically enters the Accelerated Program mode and uses the higher voltage on the input to reduce the time required for program operations. The system can then use the Write Buffer Load command sequence provided by the Accelerated Program mode. Note that if a “Write-to-Buffer-Abort Reset” is required while in Accelerated Program mode, the full 3-cycle RESET command sequence must be used to reset the device. Removing VHH from the ACC input, upon completion of the embedded program operation, returns the device to normal operation. • Sectors must be unlocked prior to raising WP#/ACC to VHH. • The WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. • It is recommended that WP#/ACC apply VHH after power-up sequence is completed. In addition, it is recommended that WP#/ACC apply from VHH to VIH/VIL before powering down VCC/ VIO . Write Operation Status The device provides several bits to determine the status of a program or erase operation. The following subsections describe the function of DQ1, DQ2, DQ3, DQ5, DQ6, and DQ7. DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. Note that the Data# Polling is valid only for the last word being programmed in the write-buffer-page during Write Buffer Programming. Reading Data# Polling status on any word other than the last word to be programmed in the writebuffer-page returns false status information. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# polling on DQ7 is active, then that sector returns to the read mode. During the Embedded Erase Algorithm, Data# polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 21 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the device returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ6-DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ6-DQ0 may be still invalid. Valid data on DQ7-D00 appears on successive read cycles. Figure 7. Write Operation Status Flowchart DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 22 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address that is being programmed or erased causes DQ6 to toggle. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100μs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase 2suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7. If a program address falls within a protected sector, DQ6 toggles for approximately 1μs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program Algorithm is complete. Toggle Bit I on DQ6 requires either OE# or CE# to be de-asserted and reasserted to show the change in state. DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erasesuspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Reading Toggle Bits DQ6/DQ2 Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erases operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high. If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erases operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. Note When verifying the status of a write operation (embedded program/erase) of a memory sector, DQ6 and DQ2 toggle between high and low states in a series of consecutive and contiguous status read cycles. In order for this toggling behavior to be properly observed, the consecutive status bit reads must not be interleaved with read accesses to other memory sectors. If it is not possible to temporarily prevent reads to other memory sectors, then it is recommended to use the DQ7 status bit as the alternative method of determining the active or inactive status of the write operation. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 23 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. The device does not output a 1 on DQ5 if the system tries to program a 1 to a location that was previously programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the device ignores the bit that was incorrectly instructed to be programmed from a 0 to a 1, while any other bits that were correctly requested to be changed from 1 to 0 are programmed. Attempting to program a 0 to a 1 is masked during the programming operation. Under valid DQ5 conditions, the system must write the reset command to return to the read mode (or to the erasesuspend-read mode if a sector was previously in the erase-suspend-program mode). DQ3: Sector Erase Timeout State Indicator After writing a sector erase command sequence, the output on DQ3 can be checked to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) When sector erase starts, DQ3 switches from “0” to “1”. This device does not support multiple sector erase (continuous sector erase) command sequences so it is not very meaningful since it immediately shows as a “1” after the first 30h command. Future devices may support this feature. DQ1: Write to Buffer Abort DQ1 indicates whether a Write to Buffer operation was aborted. Under these conditions DQ1 produces a “1”. The system must issue the “Write to Buffer Abort Reset” command sequence to return the device to reading array data. Table 5. Write Operation Status DQ7 (note 2) DQ6 DQ5 (note 1) DQ3 DQ2 (note 2) DQ1 RY/BY# Embedded Program Algorithm DQ7# Toggle 0 N/A No Toggle 0 0 Embedded Erase Algorithm 0 Toggle 0 1 Toggle N/A 0 Status Standard Mode Program Suspend Mode Erase Suspend Mode Write to Buffer Program Suspend Read Erase Suspend Read Program Suspended Sector Non-Program Suspended Sector Erase Suspended Sector Non-Erase Suspended Sector No Toggle 1 Invalid (Not allowed) 1 Data 1 0 N/A Toggle N/A Data 1 0 Erase Suspend Program (Embedded Program) DQ7# Toggle 0 N/A N/A N/A 0 Busy(note 3) Abort(note 4) DQ7# DQ7# Toggle Toggle 0 0 N/A N/A N/A N/A 0 1 0 0 Notes 1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the maximum timing limits. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location. 4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation Writing Commands/Command Sequences During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing an address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is latched on the 1st rising edge of WE# or CE#. An erase operation can erase one sector or the This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 24 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L entire device. Table 3 indicate the address space that each sector occupies. The device address space is divided into uniform 64KW/128KB sectors. A sector address is the set of address bits required to uniquely select a sector. ICC2 in “DC Characteristics” represents the active current specification for the write mode. “AC Characteristics” contains timing specification tables and timing diagrams for write operations. RY/BY# The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. This feature allows the host system to detect when data is ready to be read by simply monitoring the RY/BY# pin, which is a dedicated output and controlled by CE# (not OE#). Hardware Reset The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at least a period of tRP (RESET# Pulse Width), the device immediately terminates any operation in progress, tristates all outputs, resets the configuration register, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. To ensure data integrity Program/Erase operations that were interrupted should be reinitiated once the device is ready to accept another command sequence. When RESET# is held at VSS, the device draws VCC reset current (ICC5). If RESET# is held at VIL, but not at VSS, the standby current is greater. RESET# may be tied to the system reset circuitry which enables the system to read the boot-up firmware from the Flash memory upon a system reset. Software Reset Software reset is part of the command set that also returns the device to array read mode and must be used for the following conditions: 1. To exit Autoselect mode 2. When DQ5 goes high during write status operation that indicates program or erase cycle was not successfully completed 3. Exit sector lock/unlock operation. 4. To return to erase-suspend-read mode if the device was previously in Erase Suspend mode. 5. After any aborted operations The following are additional points to consider when using the reset command: • This command resets the sectors to the read and address bits are ignored. • Reset commands are ignored during program and erase operations. • The reset command may be written between the cycles in a program command sequence before programming begins (prior to the third cycle). This resets the sector to which the system was writing to the read mode. • If the program command sequence is written to a sector that is in the Erase Suspend mode, writing the reset command returns that sector to the erase-suspend-read mode. • The reset command may be written during an Autoselect command sequence. • If a sector has entered the Autoselect mode while in the Erase Suspend mode, writing the reset command returns that sector to the erase-suspend-read mode. • If DQ1 goes high during a Write Buffer Programming operation, the system must write the “Write to Buffer Abort Reset” command sequence to RESET the device to reading array data. The standard RESET command does not work during this condition. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 25 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Advanced Sector Protection/Unprotection The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations in any or all sectors and can be implemented through software and/or hardware methods, which are independent of each other. This section describes the various methods of protecting data stored in the memory array. An overview of these methods in shown in Figure 7. Figure 7. Advanced Sector Protection/Unprotection Persistent Protection Bit (PPB) Dynamic Protection Bit (DYB) Memory Array DYB 0 Sector 0 PPB 0 DYB 1 Sector 1 PPB 1 DYB 2 Sector 2 PPB 2 DYB 3 Sector 3 PPB 3 DYB 4 Sector 4 DYB 5 Sector 5 DYB 6 Sector 6 DYB 7 Sector 7 DYB 248 Sector 248 DYB 249 Sector 249 DYB 250 Sector 250 DYB 251 Sector 251 DYB 252 Sector 252 PPB 66 DYB 253 Sector 253 PPB 67 DYB 254 Sector 254 PPB 68 DYB 255 Sector 255 PPB 69 PPB Lock Bit 1. 0 = PPBs Locked, 1 = PPBs Unlocked. 2. Bit is volatile, and defaults to “1” on reset. 3. Programming to “0” locks all PPBs to their current state. 4. Once programmed to “0”, requires hardware reset to unlock. PPB 4 PPB 65 8. 0 = Sector Protected, 1 = Sector Unprotected. 9. PPBs programmed individually, but cleared collectively. 10.Sector 0~3 and 252~255 have PPB for each sector. Sector 4~251 are 1 PPB per 4 sectors. 5. 0 = Sector Protected, 1 = Sector Unprotected. 6. DYB bits are only effective for sectors that not protected via PPB locking mechanism. 7. Volatile Bits: defaults to unprotected after power up. Lock Register The Lock Register consists of 4 bits. The Secured Silicon Sector Protection Bit is DQ0, Persistent Protection Mode Lock Bit is DQ1, Persistent Sector Protection OTP bit is DQ3 and DYB Lock Boot Bit is DQ4. If DQ0 is ‘0’, it means that the Customer Secured Silicon area is locked and if DQ0 is ‘1’, it means that it is unlocked. When DQ1 is set to ‘0’, the device is used in the Persistent Protection Mode. DQ3 is programmed in the EON factory. When the device is programmed to disable all PPB erase command, DQ3 outputs a ‘0’, when the lock register bits are read. Similarly, if the device is programmed to enable This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 26 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L all PPB erase command, DQ3 outputs a ‘1’ when the lock register bits are read. Likewise the DQ4 bit is also programmed in the EON Factory. DQ4 is the bit which indicates whether Volatile Sector Protection Bit (DYB) is protected or not after boot-up. When the device is programmed to set all Volatile Sector Protection Bit protected after power-up, DQ4 outputs a ‘0’ when the lock register bits are read. Similarly, when the device is programmed to set all Volatile Sector Protection Bit unprotected after power-up, DQ4 outputs a ‘1’. Each of these bits in the lock register are non-volatile. DQ15- DQ5 are reserved and will be 1’s. Table 6. Lock Register DQ15-5 DQ4 Reserved DYB Lock Boot Bit DQ3 PPB One Time Programmable Bit 0 = protected all 0 = All PPB Erase DYB after boot-up Command disabled (default = 1) 1 = unprotected all 1 = All PPB Erase DYB after boot-up Command enabled (default = 1) (default = 1) DQ2 DQ1 DQ0 Reserved Persistent Protection Mode Lock Bit Secured Silicon Sector Protection Bit 0 = protected 0 = Persistent (default = 1) Protection enabled 1 = unprotect (default = 1) (default = 0) Notes: 1. After the Lock Register Bits Command Set Entry command sequence is written, reads and writes for all Sector are disabled, while reads from other sectors are allowed until exiting this mode. 2. Only DQ0 could be change by Lock Register Bits Command for user. Others bits were set by Factory. After selecting a sector protection method, each sector can operate in any of the following three states: 1. Constantly locked: The selected sectors are protected and can not be reprogrammed unless PPB lock bit is cleared via hardware reset, or power cycle. 2. Dynamically locked: The selected sectors are protected and can be altered via software commands. 3. Unlocked: The sectors are unprotected and can be erased and/or programmed. Persistent Protection Bits The Persistent Protection Bits are unique and nonvolatile. For Sector 0~3 and 252~255 have one PPB for each sectors and for Sector 4~251 have one PPB every four sectors (refer to Figure 7 and Table 3. Sector / Persistent Protection Sector Group Address Tables) and have the same endurances as the Flash memory. Preprogramming and verification prior to erasure are handled by the device, and therefore do not require system monitoring. Notes 1. Each PPB is individually programmed and all are erased in parallel. 2. While programming PPB for the four sectors and Data polling on programming PPB address, array data can not be read from any sectors. 3. Entry command disables reads and writes for all sectors selected. 4. Reads within that sector return the PPB status for that sector. 5. All Reads must be performed using the read mode. 6. The specific sector address are written at the same time as the program command. 7. If the PPB Lock Bit is set, the PPB Program or erase command does not execute and times-out without programming or erasing the PPB. 8. There are no means for individually erasing a specific PPB and no specific sector address is required for this operation. 9. Exit command must be issued after the execution which resets the device to read mode and reenables reads and writes for all sectors. 10. The programming state of the PPB for given sectors can be verified by writing a PPB Status Read Command to the device as described by the flow chart shown in Figure 8. User only can use DQ6 and RY/BY# pin to detect programming status. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 27 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Figure 8. PPB Program Algorithm Note: BA = base address This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 28 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Dynamic Protection Bits Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYBs only control the protection scheme for unprotected sectors that have their PPBs cleared (erased to “1”). By issuing the DYB Set or Clear command sequences, the DYBs are set (programmed to “0”) or cleared (erased to “1”), thus placing each sector in the protected or unprotected state respectively. This feature allows software to easily protect sectors against inadvertent changes yet does not prevent the easy removal of protection when changes are needed. Notes 1. The DYBs can be set (programmed to “0”) or cleared (erased to “1”) as often as needed. When the parts are first shipped, the PPBs are cleared (erased to “1”) and upon power up or reset, the DYBs can be set or cleared depending upon the ordering option chosen. 2. If the option to clear the DYBs after power up is chosen, (erased to “1”), then the sectorsmay be modified depending upon the PPB state of that sector (see Table 7). 3. The sectors would be in the protected state If the option to set the DYBs after power up is chosen (programmed to “0”). 4. It is possible to have sectors that are persistently locked with sectors that are left in the dynamic state. 5. The DYB Set or Clear commands for the dynamic sectors signify protected or unprotectedstate of the sectors respectively. However, if there is a need to change the status of the persistently locked sectors, a few more steps are required. First, the PPB Lock Bit must be cleared by either putting the device through a power-cycle, or hardware reset. The PPBs can then be changed to reflect the desired settings. Setting the PPB Lock Bit once again locks the PPBs, and the device operates normally again. 6. To achieve the best protection, it is recommended to execute the PPB Lock Bit Set command early in the boot code and protect the boot code by holding WP#/ACC = VIL. Note that the PPB and DYB bits have the same function when WP#/ACC = VHH as they do when ACC =VIH. Persistent Protection Bit Lock Bit The Persistent Protection Bit Lock Bit is a global volatile bit for all sectors. When set (programmed to “0”), it locks all PPBs and when cleared (erased to “1”), allows the PPBs to be changed. There is only one PPB Lock Bit per device. Notes 1. No software command sequence unlocks this bit, but only a hardware reset or a power-up clears this bit. 2. The PPB Lock Bit must be set (programmed to “0”) only after all PPBs are configured to the desired settings. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 29 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Figure 9. Lock Register Program Algorithm Advanced Sector Protection Software Examples Table7. Sector Protection Schemes: DYB, PPB and PPB Lock Bit Combinations This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 30 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Table 7 contains all possible combinations of the DYB, PPB, and PPB Lock Bit relating to the status of the sector. In summary, if the PPB Lock Bit is locked (set to “0”), no changes to the PPBs are allowed. The PPB Lock Bit can only be unlocked (reset to “1”) through a hardware reset or power cycle. See also Figure 7 for an overview of the Advanced Sector Protection feature. Hardware Data Protection Methods The device offers two main types of data protection at the sector level via hardware control: • When WP#/ACC is at VIL, the either the highest or lowest sector is locked (device specific). There are additional methods by which intended or accidental erasure of any sectors can be prevented via hardware means. The following subsections describes these methods: WP#/ACC Method The Write Protect feature provides a hardware method of protecting one outermost sector. This function is provided by the WP#/ACC pin and overrides the previously discussed Sector Protection/Unprotection method. If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the highest or lowest sector independently of whether the sector was protected or unprotected using the method described in Advanced Sector Protection/Unprotection on page 27. If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these sectors depends on whether they were last protected or unprotected. The WP#/ACC pin must be held stable during a command sequence execution. WP# has an internal pull-up; when unconnected, WP# is set at VIH. Note If WP#/ACC is at VIL when the device is in the standby mode, the maximum input load current is increased. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control inputs to prevent unintentional writes when VCC is greater than VLKO. Write Pulse “Glitch Protection” Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Power-Up Write Inhibit If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 31 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Power Conservation Modes Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# inputs are both held at VCC ± 0.3 V. The device requires standard access time (tCE) for read access, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC4 in “DC Characteristics” represents the standby current specification Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. Hardware RESET# Input Operation The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all outputs, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence to ensure data integrity. When RESET# is held at VSS ± 0.3 V, the device draws ICC reset current (ICC5). If RESET# is held at VIL but not within VSS ± 0.3 V, the standby current is greater. RESET# may be tied to the system reset circuitry and thus, a system reset would also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. Output Disable (OE#) When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the high impedance state. (With the exception of RY/BY#.) Secured Silicon Sector Flash Memory Region The Secured Silicon Sector provides an extra Flash memory region. The Secured Silicon Sector is 128 words in length and all Secured Silicon reads outside of the 128-word address range returns invalid data. The Secured Silicon Sector Indicator Bit, DQ7, (at Autoselect address 03h) is used to indicate whether or not the Secured Silicon Sector is locked when shipped from the factory. Please note the following general conditions: • On power-up, or following a hardware reset, the device reverts to sending commands to the normal address space. • Reads outside of sector SA0 return memory array data. • Sector SA0 is remapped from memory array to Secured Silicon Sector array. • Once the Secured Silicon Sector Entry Command is issued, the Secured Silicon Sector Exit command must be issued to exit Secured Silicon Sector Mode. • The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or Embedded Erase algorithm. • When sector SA0 is suspended, if system enters Secured Silicon Sector mode, the Secured Silicon Sector Region cannot be read. If the system suspends the flash in other sectors except SA0, Secured Silicon Sector Region can be read normally. • The ACC function is not available when the Secured Silicon Sector is enabled. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 32 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Table 8. Secured Silicon Sector Addresses Secured Silicon Sector Address Range 000000h-000007h Reserve for Factory 000008h-00007Fh Determined by customer Customer Lockable Secured Silicon Sector The Customer Lockable Secured Silicon Sector is always shipped unprotected (DQ0 set to “1”), allowing customers to utilize that sector in any manner they choose. If the security feature is not required, the Secured Silicon Sector can be treated as an additional Flash memory space. Please note the following: • Once the Secured Silicon Sector area is protected, the Secured Silicon Sector Indicator Bit (DQ0) is permanently set to “0.” • The Secured Silicon Sector can be read any number of times, but can be programmed and locked only once. The Secured Silicon Sector lock must be used with caution as once locked, there is no procedure available for unlocking the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way. • The accelerated programming (ACC) is not available when the Secured Silicon Sector is enabled. • Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence which return the device to the memory array at sector 0. • The address 0h~7h in Secured Silicon Sector is reserved for Factory. Secured Silicon Sector Entry/Exit Command Sequences The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Secured Silicon Sector Entry Command allows the following commands to be executed • Read customer and factory Secured Silicon areas • Program the customer Secured Silicon Sector After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally occupied by sector SA0 within the memory array. This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 33 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L COMMON FLASH INTERFACE (CFI) The common flash interface (CFI) specification outlines device and host systems software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 9~12.In word mode, the upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode and the system can read CFI data at the addresses given in Tables 9~12. The system must write the reset command to return the device to the autoselect mode. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 34 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Table 9. CFI Query Identification String Addresses (Word Mode) 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Data 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h Description Query Unique ASCII string “QRY” Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command set (00h = none exists) Address for Alternate OEM Extended Table (00h = none exists) Table 10. System Interface String Addresses (Word Mode) Data 1Bh 0027h 1Ch 0036h 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h 0000h 0000h 0003h 0004h 0009h 0000h 0005h 0005h 0004h 0000h Description Vcc Min (write/erase) DQ7-DQ4: volt, DQ3-DQ0: 100mV Vcc Max (write/erase) DQ7-DQ4: volt, DQ3-DQ0: 100mV Vpp Min voltage (00h = no Vpp pin present) Vpp Max voltage (00h = no Vpp pin present) Typical timeout per single byte/word write 2N µs Typical timeout for min size buffer write 2N µs (00h = not supported) Typical timeout per individual block erase 2N ms Typical timeout for full chip erase 2N ms (00h = not supported) Max timeout for byte/word write 2N times typical Max timeout for buffer write 2N times typical Max timeout per individual block erase 2N times typical Max timeout for full chip erase 2N times typical (00h = not supported) Table 11. Device Geometry Definition Addresses (Word mode) 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h Data 0019h 0002h 0000h 0006h 0000h 0001h 00FFh 0000h 0000h 0002h 0000h 0000h 0000h 0000h 0000h 0000h 0000h 0000h Description Device Size = 2N bytes. 2**25=32MB=256Mb Flash Device Interface Description (refer to CFI publication 100); 01h = X16 only; 02h = x8/x16 Max number of byte in multi-byte write = 2N (00h = not supported) Number of Erase Block Regions within device Erase Block Region 1 Information (refer to the CFI specification of CFI publication 100) 256 uniform sectors (7Fh + 1) Erase Block Region 3 Information (refer to the CFI specification of CFI publication 100) Erase Block Region 3 Information (refer to the CFI specification of CFI publication 100) This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 35 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L 39h 3Ah 3Bh 3Ch 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to the CFI specification of CFI publication 100) Table 12. Primary Vendor-specific Extended Query Addresses (Word Mode) 40h 41h 42h 43h 44h Data 0050h 0052h 0049h 0031h 0034h 45h 000Ch 46h 0002h 47h 0001h Sector Protect 0 = Not Supported, X = Minimum number of sectors per group 48h 0000h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 0003h Sector Protect/Unprotect Scheme 00h = High Voltage Sector Protection 01h = High Voltage + In-System Sector Protection 02h = HV + In-System + Software Command Sector Protection 03h = Software Command Sector Protection 4Ah 0000h 4Bh 0000h 4Ch 0002h 4Dh 0085h 4Eh 0095h 4Fh 00xxh 50h 0001h 52h 0008h 53h 000Fh 54h 0009h 55h 56h 0005h 0005h 57h 0000h Description Query Unique ASCII string "PRI" Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock (Bits 1-0) 00 = Required, 01 = Not Required Technology (Bits 5-2) 0001 = 0.18um, 0010 = 0.13um, 0011 = 90nm Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write Simultaneous Operation 00 = Not Supported, X = Number of Sectors Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page Minimum WP#/ACC (Acceleration) Supply Voltage 00 = Not Supported, DQ7-DQ4: Volts, DQ3=DQ0: 100mV Maximum WP#/ACC (Acceleration) Supply Voltage 00 = Not Supported, DQ7-DQ4: Volts, DQ3=DQ0: 100mV Top/Bottom Boot Sector Flag 04 = Uniform sectors bottom WP# protect 05 = Uniform sectors top WP# protect Program Suspend 00 = Not Supported, 01 = Supported Secured Silicon Sector (Customer OTP Area) Size 2N bytes Hardware Reset Low Time-out during an embedded algorithm to read mode Maximum 2N ns Hardware Reset Low Time-out not during an embedded algorithm to read mode Maximum 2N ns Erase Suspend Latency Maximum 2N µs Program Suspend Latency Maximum 2N µs Bank Organization 00 = Data at 4Ah is zero, X = Number of Banks This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 36 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Cycles Table 13. EN29GL256 Command Definitions Command Sequence Bus Cycles 1 st Cycle Addr Data P P Read 1 RA RD Reset 1 XXX F0 Word Autoselect Manufacturer ID 555 4 Byte Device ID Sector Protect Verify Program Write to Buffer Word Byte Word Word Byte Word Byte Word Program Buffer to Flash Byte Write to Buffer Abort Reset Byte Chip Erase Sector Erase 555 AAA Word Word Byte Word Byte AA 4 6 1 3 6 6 555 AAA 2AA 555 555 AAA SA 555 AAA 555 AAA 555 AAA P 2AA 555 90 AAA 55 555 AAA 2AA 555 2AA 555 90 555 55 555 AA P 55 2AA AA rd Cycle Addr Data AA AAA 3 Cycle Addr Data P 555 555 4 Byte nd P AA AAA 4 2 90 AAA 55 55 555 AAA A0 SA 25 AA AA AA 2AA 555 2AA 555 2AA 555 55 55 55 555 555 AAA 555 AAA 80 80 XXX B0 Erase/Program Resume 1 XXX 30 Secured Silicon Sector Entry 3 555 AA 2AA 55 555 88 Secured Silicon Sector Exit 4 555 AA 2AA 55 555 90 1 55 AA 2 XX PA PD Accelerated Program 5 th 6 th Cycle Addr Data Cycle Addr Data Addr 000 100 000 200 X01 X02 (SA) X02 (SA) X04 X0E X1C 2222 X0F X1E 2201 22 PA PD WBL PD PA SA P 7F 1C 7F 1C 227E 7E P P P P Cycle Data 01 00 01 00 01 PD WC F0 AAA 1 Word Byte th P 29 Erase/Program Suspend CFI Query 4 555 AAA 555 AAA XX AA AA 2AA 555 2AA 555 55 55 555 AAA SA 00 98 A0 Legend X = Don’t care RA = Address of the memory to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of the WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits Amax–A16 uniquely select any sector. WBL = Write Buffer Location. The address must be within the same write buffer page as PA. WC = Word Count is the number of write buffer locations to load minus 1 and maximum value is 31 for word and byte mode. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 37 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com 10 30 EN29GL256H/L Global Volatile Freeze Global Non-Volatile Lock Register Command Sequence Command Set Entry Bus Cycles 1 st 2 nd 3 rd Cycle Addr Data Cycle Addr Data Cycle Addr Data P P P P P P Word 3 555 AA 2AA 55 555 40 Byte 3 AAA AA 55 55 AAA 40 XXX Data Program 2 XXX A0 Read 1 00 RD Command Set Exit 2 XXX 90 XXX 00 3 555 AA 2AA 55 555 C0 AAA C0 PPB Command Set Entry Word 3 AAA AA 55 55 PPB Program 2 XXX A0 SA 00 All PPB Erase 2 XXX 80 00 30 PPB Status Read 1 SA RD PPB Command Set Exit 2 XXX 90 XXX 00 PPB Lock Command Set Entry PPB Lock Set Word 3 555 AA 2AA 55 555 50 Byte 3 AAA AA 555 55 AAA 50 2 XXX A0 XXX 00 PPB Lock Status Read PPB Lock Command Set Exit 1 XXX RD 2 XXX 90 XXX 00 Word 3 555 AA 2AA 55 555 E0 Byte 3 AAA AA 555 55 AAA E0 2 XXX A0 SA 00 DYB Clear 2 XXX A0 SA 01 DYB Status Read 1 SA RD DYB Command Set Exit 2 XXX 90 XXX 00 DYB Command Set Entry Volatile Cycles Table 14. EN29GL256 Command Definitions Byte DYB Set 4 th Cycle Addr Data P P 5 th Cycle Addr Data P 6 P 38 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 P Addr Legend X = Don’t care RD(0) = Read data. SA = Sector Address. Address bits Amax–A16 uniquely select any sector. PWD = Password PWDx = Password word0, word1, word2, and word3. Data = Lock Register Contents: PD(0) = Secured Silicon Sector Protection Bit, PD(1) = Persistent Protection Mode Lock Bit, PD(2) = Password Protection Mode Lock Bit. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. th P www.eonssi.com Cycle Data EN29GL256H/L Table 15. DC Characteristics (Ta = - 40°C to 85°C; VCC = 2.7-3.6V) Symbol Parameter ILI Input Leakage Current ILO Output Leakage Current ICC1 VCC Active Read Current IIO2 VIO Non-Active Output ICC2 VCC Intra-Page Read Current ICC3 Test Conditions Min Typ Max Unit 0V≤ VIN ≤ Vcc ±5 µA 0V≤ VOUT ≤ Vcc ±1 µA 5MHz 15 30 mA 10MHz 25 45 mA CE# = VIL , OE# = VIH CE# = VIL , OE# = VIH , VCC = VCCmax, f = 10 MHz CE# = VIL , OE# = VIH , VCC = VCCmax, f = 33 MHz 0.2 10 mA 1 10 5 15 VCC Active Erase/ Program Current CE# = VIL , OE# = VIH , VCC = VCCmax 20 30 mA ICC4 VCC Standby Current CE#, RESET# = VCC ± 0.3 V, OE# = VIH , VCC = VCC max VIL = Vss + 0.3 V/-0.1V, 1.5 10 µA ICC5 VCC Reset Current RESET# = Vss ± 0.3V 1.5 10 µA ICC6 Automatic Sleep Mode VIH = Vcc ± 0.3V VIL = Vss ± 0.3V 1.5 10 µA CE# = VIL, OE# = VIH, VCC = VCCmax, WP#/ACC = VHH 3 10 IACC ACC Accelerated Program Current 15 30 CE# = VIL; OE# = VIH ; VCC = VCC max mA WP#/ACC pin VCC pin mA VIL Input Low Voltage -0.5 VIH Input High Voltage 0.7 x VIO 0.3 x VIO VIO + 0.3 VHH Acceleration Program Voltage 8.5 9.5 V VOL Output Low Voltage IOL = 100μA 0.15 x VIO V VOH Output High Voltage CMOS IOH = -100μA VLKO Supply voltage (Erase and Program lock-out) 0.85 x VIO 2.3 V V V 2.5 V Notes: 1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they draw power if not at full CMOS supply voltages. 2. Maximum ICC specifications are tested with Vcc = Vcc max. 3. Not 100% tested. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 39 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Figure 10. Test Conditions Table 16. Test Specifications Test Conditions -90 Unit 30 pF Input Rise and Fall times 5 ns Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 0.0-3.0 V 1.5 V 1.5 V Output Load Capacitance, CL B B This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 40 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L AC CHARACTERISTICS Table 17. Read-only Operations Characteristics Parameter Symbols JEDEC Standard Speed Test Setup Description Unit -90 tAVAV tRC Read Cycle Time tAVQV tACC Address to Output Delay tELQV tCE Chip Enable To Output Delay tPACC tGLQV Min 90 ns CE# = VIL OE#= VIL Max 90 ns OE#= VIL Max 90 ns Page Access Time Max 25 ns tOE Output Enable to Output Delay Max 35 ns tEHQZ tDF Chip Enable to Output High Z Max 20 ns tGHQZ tDF Output Enable to Output High Z Max 20 ns tAXQX tOH Output Hold Time from Addresses, CE# or OE#, whichever occurs first Min 0 ns tOEH Output Enable Hold Time Min 0 ns Min 10 ns Read Toggle and DATA# Polling Notes: 1. High Z is Not 100% tested. 2. For - 90 Vcc = 2.7V – 3.6V Output Load : 1 TTL gate and 30pF Input Rise and Fall Times: 5ns Input Rise Levels: 0.0 V to 3.0 V Timing Measurement Reference Level, Input and Output: 1.5 V Figure 10. AC Waveforms for READ Operations tBRCB Addresses Addresses Stable tBACC CE# tBDF tBOEB OE# tBOEHB WE# tBCEB tBOH HIGH Z Outputs Output Valid HIGH Z RESET# RY/BY# 0V This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 41 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Figure 11. Page Read Operation Timings Note: Addresses are A2:A-1 for byte mode. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 42 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L AC CHARACTERISTICS Table 18. Hardware Reset (RESET#) Paramete r Std tRP1 tRP2 tRH tRB1 tRB2 tREADY1 tREADY2 Min Min Min Min Min Speed -90 10 500 50 0 50 Max 20 us Max 500 ns Test Setup Description RESET# Pulse Width (During Embedded Algorithms) RESET# Pulse Width (NOT During Embedded Algorithms) Reset# High Time Before Read RY/BY# Recovery Time ( to CE#, OE# go low) RY/BY# Recovery Time ( to WE# go low) Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write Unit us ns ns ns ns Figure 12. AC Waveforms for RESET# Reset# Timings tRB1 CE#, OE# WE# tREADY1 tRB2 RY/BY# RESET# tRP1 Reset Timing during Embedded Algorithms CE#, OE# tRH RY/BY# RESET# tRP2 tREADY2 Reset Timing NOT during Embedded Algorithms This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 43 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L AC CHARACTERISTICS Table 19. Word / Byte Configuration (BYTE#) Std Parameter tBCS tCBH tRBH Speed Test Setup Description Byte# to CE# switching setup time CE# to Byte# switching hold time RY/BY# to Byte# switching hold time -90 Min Min Min 0 0 0 Unit ns ns ns Figure 13. AC Waveforms for BYTE# CE# OE# Byte# tCBH tBCS Byte# timings for Read Operations CE# WE# Byte# tRBH tBCS RY/BY# Byte #timings for Write Operations Note: Switching BYTE# pin not allowed during embedded operations This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 44 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L AC CHARACTERISTICS Table 20. Write (Erase/Program) Operations Parameter Symbols Speed Description Unit JEDEC Standard tAVAV tWC Write Cycle Time Min 90 ns tAVWL tAS Address Setup Time Min 0 ns tWLAX tAH Address Hold Time Min 45 ns tDVWH tDS Data Setup Time Min 40 ns tWHDX tDH Data Hold Time Min 0 ns Read Toggle and DATA# Polling Read Recovery Time before Write (OE# High to WE# Low) MIn 0 ns Min 10 ns Min 0 ns tOEH -90 Output Enable Hold Time tGHWL tGHWL tELWL tCS CE# SetupTime Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 ns tWHDL tWPH Write Pulse Width High Min 25 ns Write Buffer Program Operation (Note 2, 3) Typ 160 µs Typ 8 µs Max 200 µs Typ 0.1 s Max 2 s Chip Erase Operation Typ 60 s tVHH VHH Rise and Fall Time Min 250 ns tVCS Vcc Setup Time Min 50 µs WE# High to RY/BY# Low Max 90 ns Recovery Time from RY/BY# Min 0 ns tWHWH1 tWHWH2 tWHWH1 tWHWH2 t BUSY B tRB Programming Operation (Word AND Byte Mode) Sector Erase Operation Notes: 1. Not 100% tested. 2. See table.22 Erase and Programming Performance for more information. 3. For 1~32 words bytes programmed. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 45 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L AC CHARACTERISTICS Table 21. Write (Erase/Program) Operations Alternate CE# Controlled Writes Parameter Symbols Speed Description Unit JEDEC Standard tAVAV tWC Write Cycle Time Min 90 ns tAVEL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 45 ns tDVEH tDS Data Setup Time Min 40 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time before Write (OE# High to CE# Low) Min 0 ns tWLEL tWS WE# SetupTime Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP Write Pulse Width Min 45 ns tEHEL tCPH Write Pulse Width High Min 20 ns Write Buffer Program Operation (Note 2, 3) Typ 160 µs Typ 8 µs Max 200 µs Typ 0.1 s Max 2 s tWHWH1 tWHWH2 tWHWH1 tWHWH2 -90 Programming Operation (Byte AND word mode) Sector Erase Operation Notes: 1. Not 100% tested. 2. See table.22 Erase and Programming Performance for more information. 3. For 1~32 words bytes programmed. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 46 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L AC CHARACTERISTICS Figure 14. AC Waveforms for Chip/Sector Erase Operations Timings Erase Command Sequence (last 2 cycles) tAS tWC Addresses 0x2AA Read Status Data (last two cycles) tAH SA VA VA 0x555 for chip erase CE# tGHWL tCH OE# tWP WE# tWPH tCS 0x55 Data tDS tWHWH2 0x30 tDH tBUSY Status 10 for chip erase DOUT tRB RY/BY# VCC tVCS Notes: 1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout=true data at read address. 2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command sequence. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 47 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Figure 15. Program Operation Timings Program Command Sequence (last 2 cycles) tAS tWC Addresses 0x555 Program Command Sequence (last 2 cycles) tAH PA PA PA CE# tGHWL OE# tCH tWP WE# tWPH tCS Data OxA0 tDS RY/BY# tWHWH1 Status PD tDH DOUT tRB tBUSY tVCS VCC Notes: 1. PA=Program Address, PD=Program Data, DOUT is the true data at the program address. 2. VCC shown in order to illustrate tVCS measurement references. It cannot occur as shown during a valid command sequence. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 48 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Figure 16. AC Waveforms for /DATA Polling During Embedded Algorithm Operations tRC Addresses VA VA VA tACC tCH tCE CE# tOE OE# tOEH tDF WE# tOH DQ[7] Complement DQ[6:0] Status Data Comple -ment Status Data Valid Data True True Valid Data tBUSY RY/BY# Notes: 1. VA=Valid Address for reading Data# Polling status data 2. This diagram shows the first status cycle after the command sequence, the last status read cycle and the array data read cycle. Figure 17. AC Waveforms for Toggle Bit During Embedded Algorithm Operations tRC VA Addresses tCH VA VA VA tACC tCE CE# tOE OE# tOEH WE# tDF tOH Valid Status DQ6, DQ2 tBUSY (first read) Valid Status (second read) Valid Status Valid Data (stops toggling) RY/BY# This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 49 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Figure 18. Alternate CE# Controlled Write Operation Timings PA for Program SA for Sector Erase 0x555 for Chip Erase 0x555 for Program 0x2AA for Erase Addresses VA tWC tAS tAH WE# tWH tGHEL OE# tCP tCPH tWS CE# tDS tWHWH1 / tWHWH2 tBUSY tDH Status Data 0xA0 for Program 0x55 for Erase DOUT PD for Program 0x30 for Sector Erase 0x10 for Chip Erase RY/BY tRH Reset# Notes: PA = address of the memory location to be programmed. PD = data to be programmed at byte address. VA = Valid Address for reading program or erase status Dout = array data read at VA Shown above are the last two cycles of the program or erase command sequence and the last status read cycle Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command sequence. Figure 19. DQ2 vs. DQ6 Enter Embedded Erase WE# Enter Erase Suspend Program Erase Suspend Erase Erase Resume Enter Suspend Program Enter Suspend Read Erase Suspend Read Erase Erase Complete DQ6 DQ2 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 50 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L TABLE 22. ERASE AND PROGRAMMING PERFORMANCE Typ Limits Max Unit Sector Erase Time 0.1 2 sec Chip Erase Time 60 240 sec Byte Programming Time 8 200 µs Word Programming Time 8 200 µs Byte 268.8 806.4 Word 134.4 403.2 Parameter Chip Programming Time Total Write Buffer time 160 ACC Total Write Buffer time 60 Erase/Program Endurance 100K sec Comments Excludes 00h programming prior to erasure Excludes system level overhead µs Minimum 100K cycles cycles Notes: 1. Typical program and erase times assume the following conditions: room temperature, 3V and checkboard pattern programmed. 2. Maximum program and erase times assume the following conditions: worst case Vcc, 90°C and 100,000 cycles. Table 23. 56-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Note: Test conditions are Temperature = 25°C and f = 1.0 MHz. Table 24. DATA RETENTION Parameter Description Test Conditions Min Unit 150°C 10 Years 125°C 20 Years Data Retention Time This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 51 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L ABSOLUTE MAXIMUM RATINGS Parameter Value Unit Storage Temperature -65 to +150 °C Plastic Packages -65 to +125 °C -55 to +125 °C 200 mA OE#, RESET# and WP#/ACC2 -0.5 to + 9.5 V All other pins 3 -0.5 to Vcc+0.5 V -0.5 to + 4.0 V Ambient Temperature With Power Applied Output Short Circuit Current1 P P P P P Voltage with Respect to Ground P P P Vcc Notes: 1. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second. 2. Minimum DC input voltage on OE#, RESET# and WP#/ACC pins is –0.5V. During voltage transitions, OE#, RESET# and WP#/ACC pins may undershoot V ss to –1.0V for periods of up to 50ns and to –2.0V for periods of up to 20ns. See figure below. Maximum DC input voltage on OE#, and RESET# is 8.5V which may overshoot to 9.5V for periods up to 20ns. 3. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot V ss to –1.0V for periods of up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is V cc + 0.5 V. During voltage transitions, outputs may overshoot to V cc + 1.5 V for periods up to 20ns. See figure below. 4. Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability. B B B B B B RECOMMENDED OPERATING RANGES 1 P P Parameter Value Unit -40 to 85 °C Full Voltage Range: 2.7 to 3.6V V Ambient Operating Temperature Industrial Devices Operating Supply Voltage Vcc 1. B B Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed. Vcc +1.5V Maximum Negative Overshoot Waveform This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Maximum Positive Overshoot Waveform 52 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L FIGURE 20. 56L TSOP 14mm x 20mm package outline SYMBOL MIN. --0.05 0.95 --------0.17 0.5 0.08 DIMENSION IN MM NOR ----1.00 20.00 18.40 14.00 0.50 0.22 0.60 0.15 A A1 A2 D D1 E e b L R 0 θ 0 Note : 1. Coplanarity: 0.1 mm 0 3 MAX 1.20 0.15 1.05 --------0.27 0.70 0.20 0 5 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 53 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L FIGURE 21. 64-ball Ball Grid Array (BGA), 11 X13 mm, Pitch 1mm package outline SYMBOL DIMENSION IN MM A MIN. - -- NOR - -- MAX 1.40 A1 A2 0.40 0.60 0.50 0.66 0.60 0.76 D E D1 12.90 10.90 - -- 13.00 11.00 7.00 13.10 11.10 - -- E1 e b - -- -0.50 7.00 1.00 0.60 - -- -0.70 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 54 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Purpose Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the same as that of Eon delivered before. Please be advised with the change and appreciate your kindly cooperation and fully support Eon’s product family. Eon products’ Top Marking cFeon Top Marking Example: cFeon Part Number: XXXX-XXX Lot Number: XXXXX Date Code: XXXXX For More Information Please contact your local sales office for additional information about Eon memory solutions. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 55 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L ORDERING INFORMATION EN29GL256 H - 90 Z I P PACKAGING CONTENT P = RoHS compliant TEMPERATURE RANGE I = Industrial (-40°C to +85°C) PACKAGE Z = 56-pin TSOP BA = 64-Ball Ball Grid Array (BGA) 1.0mm pitch, 11mm x 13mm package SPEED 90 = 90ns SECTOR for WRITE PROTECT (WP#/ACC=L) H = highest address sector protected L = lowest address sector protected BASE PART NUMBER EN = Eon Silicon Solution Inc. 29GL = FLASH, 3V Page Mode Flash Memory 256 = 256 Megabit (32M x 8 / 16M x 16) This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 56 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com EN29GL256H/L Revisions List Revision No Description Date A 2009/02/18 B C D Preliminary 1. Add internal pull-up description for WP# pin in Table1 on Page 4 2. Add WP#/ACC, VIO pin in Figure3 on Page 4 3. Modify tOE from 30ns to 25ns in Table 17 on page 40 and Page 5 4. Add Secured Silicon Sector Entry/Exit command in Table13 5. Modify typo from Sector Erase Suspend to Erase/Program Suspend, from Sector Erase Resume to Erase/Program resume in Table13 6. Modify package code for 56-pin TSOP from T to Z in ordering information on Page 57 7. Del table 22 and Figure 20 Temporary Sector Unprotect Timing table and Diagram and Figure 21.Sector Protect/Unprotect Timing Diagram 8. Modify Erase/Program performance in Table 20, 21 and 22. Chip erase time from 64Æ60sec typ and 560Æ240sec max. Add ACC and total write buffer time spec 9. Del tCEH on table 17 2009/05/12 10. Modify DC Characteristics in table 15 VHH from 10.5~11.5V to 8.5~9.5V ICC1 5MHz 9Æ15mA typ, 10MHz 16Æ25mA typ ICC4, ICC5 and ICC6 1Æ1.5uA typ, 5Æ10uA max Add IIO2 and IACCspec 11. Del apply VID on address pin A9 to access autoselect codes function. ( Remove TABLE 5 and modify description Autoselect section for using High voltage to get Autoselect Codes ) 12. Modify A9 spec from 9.5V to Vcc+0.5V in ABSOLUTE MAXIMUM RATINGS 13. Modify CFI 4Ah, 4Fh description and data of 4Fh in table 12 14. Modify CFI data for address 27h and 2Dh. 15. Modify typo Sector Architecture 128 to 256 sectors on page1 16. Modify typo Byte mode to Word mode on page7 1. Modify naming for DQ0 OTP Lock Bit to Secured Silicon Sector Protection Bit on Page 28 2. Modify Table.8 Secured Silicon Sector Address Range 000000h000007h from Determined by customer to Reserve for Factory 3. Add note “The address 0h~7h in Secured Silicon Sector is reserved for Factory“ on Page 34 2009/7/14 4. Update FIGURE 21. 64 ball Fortified Ball Grid Array (FBGA), 11 X13 mm, Pitch 1mm package outline on page 55 5. Modify from Sector 0 to all sectors in note 1 of Table 6 and note 2, 3 and note 9 of PPB section on page 28 6. Add “User only can use DQ6 and RY/BY# pin to detect programming status” in note 10 on page29 Change the package code of 64-ball BGA on page 56. 2009/07/22 1. Correct typo in Table 20, “ t BUSY “ from Min. to Max on page 45. B E F G 2. Add a note "when sector SA0 is suspended, if system enters Secured 2010/01/26 Sector mode,..." on page 32. 1. Add Write Buffer byte mode command and note that maximum value is 31 for word and byte mode in page 37. 2. Change the speed option from 70ns to 90ns, and modify related 2010/03/31 parameter for 90ns speed. Update the Output Load Capacitance from 100pF to 30pF on page 40 2011/01/17 and 41. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 57 ©2004 Eon Silicon Solution, Inc., Rev. G, Issue Date: 2011/01/17 www.eonssi.com