EON EN29PL064-70TI

EN29PL064/032
EN29PL064/032
64/32 Mbit (4/2 M x 16-Bit) CMOS 3.0 Volt- only,
Simultaneous-Read/Write Flash Memory
Distinctive Characteristics
Architectural Advantages
• 64/32 Mbit Page Mode devices
- Page size of 4 words: Fast page read access
from random locations within the page
• Single power supply operation
- Voltage range of 2.7V to 3.3V valid for MCP
product
- Single Voltage, 2.7V to 3.6V for Read and Write
operations
• Simultaneous Read/Write Operation
- Data can be continuously read from one bank
while executing erase/ program functions in
another bank
- Zero latency switching from write to read
operations
• FlexBank Architecture( PL064/PL032)
- 4 separate banks, with up to two simultaneous
operations per device
- Bank A:
PL064 - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
PL032 - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
- Bank B:
PL064 - 24 Mbit (32 Kw x 48)
PL032 - 12 Mbit (32 Kw x 24)
- Bank C:
PL064 - 24 Mbit (32 Kw x 48)
PL032 - 12 Mbit (32 Kw x 24)
- Bank D:
PL064 - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
PL032 - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
• Secured Silicon Sector region
- Up to 64 customer-lockable words
• Both top and bottom boot blocks in one device
• Data Retention: 20 years typical
• Cycling Endurance: 100K cycles per sector
typical
Performance Characteristics
•
•
-
High Performance
Page access times as fast as 25 ns
Random access times as fast as 70 ns
32-word/64-byte write buffer reduces overall
programming time for multiple-word updates
Power consumption (typical values at 10 MHz)
45 mA active read current
17 mA program/erase current
0.2 µA typical standby mode current
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
Software Features
• Software command-set compatible with
JEDEC 42.4 standard
• CFI (Common Flash Interface) compliant
- Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
• Erase Suspend / Erase Resume
- Suspends an erase operation to allow read or
program operations in other sectors of same
bank
• Program Suspend / Program Resume
- Suspends a program operation to allow read
operation from sectors other than the one
being programmed
• Unlock Bypass Program command
- Reduces overall programming time when
issuing multiple program command
sequences
Hardware Features
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting
program or erase cycle completion
• Hardware reset pin (RESET#)
- Hardware method to reset the device to reading
array data
• WP#/ ACC (Write Protect/Acceleration) input
- At VIL, hardware level protection for the first and
last two 4K word sectors.
- At VIH, allows removal of sector protection
- At VHH, provides accelerated programming in a
factory setting
• Persistent Sector Protection
- A command sector protection method to lock
combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector
- Sectors can be locked and unlocked in-system at
VCC level
• Package options
- 56-ball Fine Pitch BGA
- 48-ball Fine pitch BGA
- 48-pin TSOP-1
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
GENERAL DESCRIPTION
The PL064/PL032 is a 64/32 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash
memory device organized as 4/2 Mwords. The devices are offered in the following packages:
– 7 mm x 9 mm, 56-Ball Fine-pitch BGA standalone (PL064/PL032)
– 8 mm x 6 mm, 48-ball Fine-pitch BGA standalone (PL032)
– 48-pin TSOP (PL064/PL032)
The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed in-system or in
standard EPROM programmers. A 11.0 volt VPP is not required for write or erase operations.
The device offers fast page access times of 25 ns, with corresponding random access times of 70
ns, respectively, allowing high speed microprocessors to operate without wait states. To eliminate
bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable
(OE#) controls.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
1. Simultaneous Read/Write Operation with Zero Latency
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the
memory space into 4 banks, which can be considered to be four separate memory arrays as far as
certain operations are concerned. The device can improve overall system performance by allowing a
host system to program or erase in one bank, then immediately and simultaneously read from
another bank with zero latency (with two simultaneous operations operating at any one time). This
releases the system from waiting for the completion of a program or erase operation, greatly
improving system performance.
The device can be organized in both top and bottom sector configurations. The banks are organized
as follows:
Bank
PL064 Sectors
PL032 Sectors
A
8 Mbit (4 Kw x 8 and 32 Kw x 15)
4 Mbit (4 Kw x 8 and 32 Kw x 7)
B
24 Mbit (32 Kw x 48)
12 Mbit (32 Kw x 24)
C
24 Mbit (32 Kw x 48)
12 Mbit (32 Kw x 24)
D
8 Mbit (4 Kw x 8 and 32 Kw x 15)
4 Mbit (4 Kw x 8 and 32 Kw x 7)
1.1 Page Mode Features
The page size is 4 words. After initial page access is accomplished, the page mode operation
provides fast read access speed of random locations within that page.
1.2 Standard Flash Memory Features
The device requires a single 3.0 volt power supply (2.7 V to 3.6 V) for both read and write
functions. Internally generated and regulated voltages are provided for the program and erase
operations.
The device is entirely command set compatible with the JEDEC 42.4 single-power-supply Flash
standard. Commands are written to the command register using standard microprocessor write
timing. Register contents serve as inputs to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch addresses and data needed for the
programming and erase operations. Reading data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program command sequence. The Unlock Bypass
mode facilitates faster programming times by requiring only two write cycles to program data instead
of four. Device erasure occurs by executing the erase command sequence.
The host system can detect whether a program or erase operation is complete by reading the DQ7
(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed,
the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write
operations during power transitions. The hardware sector protection feature disables both program
and erase operations in any combination of sectors of memory. This can be achieved in-system or
via programming equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of
time to read data from, or program data to, any sector that is not selected for erasure. True
background erase can thus be achieved. If a read is needed from the Secured Silicon Sector area
(One Time Program area) after an erase suspend, then the user must use the proper command
sequence to enter and exit this region.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
The Program Suspend/Program Resume feature enables the user to hold the program operation
to read data from any sector that is not selected for programming. If a read is needed from the
Secured Silicon Sector area, Persistent Protection area, or the CFI area, after a program suspend,
then the user must use the proper command sequence to enter and exit this region.
The device offers two power-saving features. When addresses have been stable for a specified
amount of time, the device enters the automatic sleep mode. The system can also place the device
into the standby mode. Power consumption is greatly reduced in both these modes.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
2. Ordering Information
EN29PL064
-
70
T
I
P
PACKAGING CONTENT
(Blank) = Conventional
P = Pb Free
TEMPERATURE RANGE
I = Industrial (-40°C to +85°C)
PACKAGE
T = 48-pin TSOP
B = 48-Ball Fine Pitch Ball Grid Array (FBGA)
0.80mm pitch, 6mm x 8mm package
C =56-Ball Fine Pitch Ball Grid Array (FBGA)
0.80mm pitch, 7mm x 9mm package
SPEED
70 = 70ns
BASE PART NUMBER
EN = Eon Silicon Solution Inc.
29PL = FLASH, 3.0V Read Program Erase,
Simultaneous-Read/Write, Page-Mode
064 = 64 Megabit (4 M x 16-Bit)
032 = 32 Megabit (2 M x 16-Bit)
3. Product Selector Guide
Part Number
Speed Option
EN29PL032 / EN29PL064
VCC = 2.7 V – 3.6 V
70
Max Access Time, ns (tACC)
70
Max CE# Access , ns (tCE)
Max Page Access, ns (tPACC)
25
Max OE# Access, ns (tOE)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
4. BLOCK DIAGRAM
Notes
1.
2.
RY/BY# is an open drain output.
Amax = A21 (PL064), A20 (PL032)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
5. Simultaneous Read/Write Block Diagram
Note
Amax = A21 (PL064), A20 (PL032)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
7
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
6. Connection Diagrams
Figure 6.1 48-pin TSOP
Note : PL032: pin 13 (A21) = NC
Figure 6.2 48-Ball Fine-Pitch BGA, Top View, Balls Facing Down ( PL032 )
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
8
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 6.3 56-Ball Fine-Pitch BGA, Top View, Balls Facing Down
Note : PL032: C8 (A21) = NC
RFU = Reserved for Future Use
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
7. Pin Description
Amax–A0
Address bus
DQ15–DQ0
16-bit data inputs/outputs/float
CE#
Chip Enable Inputs
OE#
Output Enable Input
WE#
Write Enable
VSS
Device Ground
NC
Pin Not Connected Internally
Ready/Busy output and open drain.
When RY/BY#= VIH, the device is ready to accept read operations and commands. When RY/ BY#=
VOL, the device is either executing an embedded algorithm or the device is executing a hardware
reset operation.
RY/BY#
WP#/ACC
Write Protect/Acceleration Input.
When WP#/ACC= VIL, the highest and lowest two 4K-word sectors are write protected regardless of
other sector protection configurations. When WP#/ACC= VIH, these sector are unprotected unless
the PPB is programmed. When WP#/ACC= 11V, program and erase operations
are accelerated.
VCC
Chip Power Supply
(2.7 V to 3.6 V)
RESET#
Hardware Reset Pin
Note
Amax = A21 ( PL064), A20 (PL032)
8. Logic Symbol
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
10
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
9. Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated
through the internal command register. The command register itself does not occupy any
addressable memory location. The register is a latch used to store the commands, along with the
address and data information needed to execute the command. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the function of the device.
Table 9.1 lists the device bus operations, the inputs and control levels they require, and the resulting
output. The following subsections describe each of these operations in further detail.
Table 9.1 Device Bus Operations
Operation
CE#
Read
L
Write
L
Standby
Vcc±0.3 V
Output Disable
L
Reset
X
Temporary Sector
X
Unprotect (High Voltage)
OE#
L
H
X
H
X
WE#
H
L
X
H
X
RESET#
H
H
Vcc ±0.3 V
H
L
WP#/ACC
X
X (Note 2)
X (Note 2)
X
X
Addresses
(Amax–A0)
AIN
AIN
X
X
X
DQ15–
DQ0
DOUT
DIN
High-Z
High-Z
High-Z
X
X
VID
X
AIN
DIN
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 10.5–11.5 V, VHH = 8.5–9.5 V, X = Don’t Care, SA = Sector
Address, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes
1.
2.
The sector protect and sector unprotect functions may also be implemented via programming equipment.
See High Voltage Sector Protection
WP#/ACC must be high when writing to upper two and lower two sectors.
9.1 Requirements for Reading Array Data
To read array data from the outputs, the system must drive the OE# and appropriate CE# pins. CE#
is the power control. OE# is the output control and gates array data to the output pins. WE# should
remain at VIH.
The internal state machine is set for reading array data upon device power-up, or after a hardware
reset. This ensures that no spurious alteration of the memory content occurs during the power
transition. No command is necessary in this mode to obtain array data. Standard microprocessor
read cycles that assert valid addresses on the device address inputs produce valid data on the
device data outputs. Each bank remains enabled for read access until the command register
contents are altered.
Refer to Table 21.3 for timing specifications and to Figure 20.3 for the timing diagram. ICC1 in the
DC Characteristics table represents the active current specification for reading array data.
9.1.1 Random Read (Non-Page Read)
Address access time (tACC) is equal to the delay from stable addresses to valid output data.
The chip enable access time (tCE) is the delay from the stable addresses and stable CE# to
valid data at the output inputs. The output enable access time is the delay from the falling
edge of the OE# to valid data at the output inputs (assuming the addresses have been stable
for at least tACC–tOE time).
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
9.1.2 Page Mode Read
The device is capable of fast page mode read and is compatible with the page mode Mask
ROM read operation. This mode provides faster read access speed for random locations
within a page. Address bits Amax–A2 select a 4 word page, and address bits A1–A0 select a
specific word within that page. This is an asynchronous operation with the microprocessor
supplying the specific word location.
The random or initial page access is tACC or tCE and subsequent page read accesses (as long
as the locations specified by the microprocessor falls within that page) is equivalent to tPACC.
When CE# is deasserted (=VIH), the reassertion of CE# for subsequent access has access
time of tACC or tCE. Here again, CE# selects the device and OE# is the output control and
should be used to gate data to the output inputs if the device is selected. Fast page mode
accesses are obtained by keeping Amax–A2 constant and changing A1–A0 to select the
specific word within that page.
Table 9.2 Page Select
Word
Word 0
Word 1
A1
0
0
A0
0
1
Word 2
1
0
Word 3
1
1
9.2 Simultaneous Read/Write Operation
In addition to the conventional features (read, program, erase-suspend read, erase-suspend
program, and program-suspend read), the device is capable of reading data from one bank of
memory while a program or erase operation is in progress in another bank of memory (simultaneous
operation). The bank can be selected by bank addresses (PL064: A21–A19, PL032: A20–A18) with
zero latency.
The simultaneous operation can execute multi-function mode in the same bank.
Table 9.3 Bank Select
Bank
PL064: A21–A19, PL032: A20–A18
Bank A
Bank B
000
001, 010, 011
Bank C
100, 101, 110
Bank D
111
9.3 Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and
erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters
the Unlock Bypass mode, only two write cycles are required to program a word, instead of four.
Word Program Command Sequence has details on programming data to the device using both
standard and Unlock Bypass command sequences.
An erase operation can erase one sector or the entire device. Table 9.3 indicates the set of address
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
12
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
space that each sector occupies. A “bank address” is the set of address bits required to uniquely
select a bank. Similarly, a “sector address” refers to the address bits required to uniquely select a
sector. Command Definitions has details on erasing a sector or the entire chip, or suspending /
resuming the erase operation.
ICC2 in the DC Characteristics table represents the active current specification for the write mode.
See the timing specification tables and timing diagrams in section Reset for write operations.
9.3.1 Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This function is
primarily intended to allow faster manufacturing throughput at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned
Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher
voltage on the pin to reduce the time required for program operations. The system would use
a two-cycle program command sequence as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that VHH must not be
asserted on WP#/ACC for operations other than accelerated programming, or device damage
may result. In addition, the WP#/ACC pin should be raised to VCC when not in use. That is, the
WP#/ACC pin should not be left floating or unconnected; inconsistent behavior of the device
may result.
9.3.2 Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect
mode. The system can then read autoselect codes from the internal register (which is
separate from the memory array) on DQ15–DQ0. Standard read cycle timings apply in this
mode. Refer to the Table 9.6, Secured Silicon Sector Addresses and Autoselect Command
Sequence for more information.
9.4 Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode.
In this mode, current consumption is greatly reduced, and the outputs are placed in the high
impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ±
0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH,
but not within VCC ± 0.3 V, the device will be in the standby mode, but the standby current will be
greater. The device requires standard access time (tCE) for read access when the device is in either
of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
ICC3 in DC Characteristics represents the CMOS standby current specification.
9.5 Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically
enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is
independent of the CE#, WE#, and OE# control signals. Standard address access timings provide
new data when addresses are changed. While in sleep mode, output data is latched and always
available to the system. Note that during automatic sleep mode, OE# must be at VIH before the
device reduces current to the stated sleep mode specification. ICC5 in DC Characteristics represents
the automatic sleep mode current specification.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
13
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
9.6 RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When
the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any
operation in progress, tristates all output pins, and ignores all read/write commands for the duration
of the RESET# pulse. The device also resets the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once the device is ready to accept another
command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the
device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3 V, the
standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the
Flash memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy)
until the internal reset operation is complete, which requires a time of tREADY (during Embedded
Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is
complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is
“1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The
system can read data tRH after the RESET# pin returns to VIH.
Refer to the tables in AC Characteristic for RESET# parameters and to Figure 20.5 for the timing
diagram.
9.7 Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins (except for RY/BY#)
are placed in the highest Impedance state
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
14
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Table 9.4 PL064 Sector Architecture (Sheet 1 of 4)
Bank
Bank
A
Sector
Sector Address (A21-A12)
Sector Size (Kwords)
Address Range (x16)
SA0
SA1
SA2
0000000000
0000000001
0000000010
4
4
4
000000h–000FFFh
001000h–001FFFh
002000h–002FFFh
SA3
0000000011
4
003000h–003FFFh
SA4
0000000100
4
004000h–004FFFh
SA5
0000000101
4
005000h–005FFFh
SA6
0000000110
4
006000h–006FFFh
SA7
0000000111
4
007000h–007FFFh
SA8
0000001XXX
32
008000h–00FFFFh
SA9
0000010XXX
32
010000h–017FFFh
SA10
SA11
0000011XXX
0000100XXX
32
32
018000h–01FFFFh
020000h–027FFFh
SA12
0000101XXX
32
028000h–02FFFFh
SA13
0000110XXX
32
030000h–037FFFh
SA14
0000111XXX
32
038000h–03FFFFh
SA15
0001000XXX
32
040000h–047FFFh
SA16
0001001XXX
32
048000h–04FFFFh
SA17
0001010XXX
32
050000h–057FFFh
SA18
0001011XXX
32
058000h–05FFFFh
SA19
0001100XXX
32
060000h–067FFFh
SA20
0001101XXX
32
068000h–06FFFFh
SA21
0001110XXX
32
070000h–077FFFh
SA22
0001111XXX
32
078000h–07FFFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
15
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Table 9.4 PL064 Sector Architecture (Sheet 2 of 4)
Bank
Bank
B
Sector
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
SA39
SA40
SA41
SA42
SA43
Sector Address (A21-A12)
0010000XXX
0010001XXX
0010010XXX
0010011XXX
0010100XXX
0010101XXX
0010110XXX
0010111XXX
0011000XXX
0011001XXX
0011010XXX
0011011XXX
0011100XXX
0011101XXX
0011110XXX
0011111XXX
0100000XXX
0100001XXX
0100010XXX
0100011XXX
0100100XXX
Sector Size (Kwords)
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
Address Range (x16)
080000h–087FFFh
088000h–08FFFFh
090000h–097FFFh
098000h–09FFFFh
0A0000h–0A7FFFh
0A8000h–0AFFFFh
0B0000h–0B7FFFh
0B8000h–0BFFFFh
0C0000h–0C7FFFh
0C8000h–0CFFFFh
0D0000h–0D7FFFh
0D8000h–0DFFFFh
0E0000h–0E7FFFh
0E8000h–0EFFFFh
0F0000h–0F7FFFh
0F8000h–0FFFFFh
100000h–107FFFh
108000h–10FFFFh
110000h–117FFFh
118000h–11FFFFh
120000h–127FFFh
SA44
0100101XXX
32
128000h–12FFFFh
SA45
0100110XXX
32
130000h–137FFFh
SA46
0100111XXX
32
138000h–13FFFFh
SA47
0101000XXX
32
140000h–147FFFh
SA48
0101001XXX
32
148000h–14FFFFh
SA49
0101010XXX
32
150000h–157FFFh
SA50
0101011XXX
32
158000h–15FFFFh
SA51
SA52
0101100XXX
0101101XXX
32
32
160000h–167FFFh
168000h–16FFFFh
SA53
0101110XXX
32
170000h–177FFFh
SA54
0101111XXX
32
178000h–17FFFFh
SA55
0110000XXX
32
180000h–187FFFh
SA56
0110001XXX
32
188000h–18FFFFh
SA57
0110010XXX
32
190000h–197FFFh
SA58
0110011XXX
32
198000h–19FFFFh
SA59
0110100XXX
32
1A0000h–1A7FFFh
SA60
0110101XXX
32
1A8000h–1AFFFFh
SA61
0110110XXX
32
1B0000h–1B7FFFh
SA62
0110111XXX
32
1B8000h–1BFFFFh
SA63
0111000XXX
32
1C0000h–1C7FFFh
1C8000h–1CFFFFh
SA64
0111001XXX
32
SA65
0111010XXX
32
1D0000h–1D7FFFh
SA66
0111011XXX
32
1D8000h–1DFFFFh
SA67
0111100XXX
32
1E0000h–1E7FFFh
SA68
0111101XXX
32
1E8000h–1EFFFFh
SA69
0111110XXX
32
1F0000h–1F7FFFh
SA70
0111111XXX
32
1F8000h–1FFFFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
16
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Table 9.4 PL064 Sector Architecture (Sheet 3 of 4)
Bank
Bank
C
Sector
SA71
SA72
SA73
SA74
SA75
SA76
SA77
SA78
SA79
SA80
SA81
SA82
SA83
SA84
SA85
SA86
SA87
SA88
SA89
Sector Address (A21-A12)
1000000XXX
1000001XXX
1000010XXX
1000011XXX
1000100XXX
1000101XXX
1000110XXX
1000111XXX
1001000XXX
1001001XXX
1001010XXX
1001011XXX
1001100XXX
1001101XXX
1001110XXX
1001111XXX
1010000XXX
1010001XXX
1010010XXX
Sector Size (Kwords)
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
Address Range (x16)
200000h–207FFFh
208000h–20FFFFh
210000h–217FFFh
218000h–21FFFFh
220000h–227FFFh
228000h–22FFFFh
230000h–237FFFh
238000h–23FFFFh
240000h–247FFFh
248000h–24FFFFh
250000h–257FFFh
258000h–25FFFFh
260000h–267FFFh
268000h–26FFFFh
270000h–277FFFh
278000h–27FFFFh
280000h–287FFFh
288000h–28FFFFh
290000h–297FFFh
SA90
1010011XXX
32
298000h–29FFFFh
SA91
SA92
1010100XXX
1010101XXX
32
32
2A0000h–2A7FFFh
2A8000h–2AFFFFh
SA93
1010110XXX
32
2B0000h–2B7FFFh
SA94
1010111XXX
32
2B8000h–2BFFFFh
SA95
1011000XXX
32
2C0000h–2C7FFFh
SA96
1011001XXX
32
2C8000h–2CFFFFh
SA97
1011010XXX
32
2D0000h–2D7FFFh
2D8000h–2DFFFFh
SA98
1011011XXX
32
SA99
1011100XXX
32
2E0000h–2E7FFFh
SA100
1011101XXX
32
2E8000h–2EFFFFh
SA101
1011110XXX
32
2F0000h–2F7FFFh
SA102
1011111XXX
32
2F8000h–2FFFFFh
SA103
1100000XXX
32
300000h–307FFFh
SA104
1100001XXX
32
308000h–30FFFFh
SA105
1100010XXX
32
310000h–317FFFh
SA106
SA107
1100011XXX
1100100XXX
32
32
318000h–31FFFFh
320000h–327FFFh
SA108
1100101XXX
32
328000h–32FFFFh
SA109
1100110XXX
32
330000h–337FFFh
SA110
1100111XXX
32
338000h–33FFFFh
SA111
1101000XXX
32
340000h–347FFFh
SA112
1101001XXX
32
348000h–34FFFFh
SA113
1101010XXX
32
350000h–357FFFh
SA114
1101011XXX
32
358000h–35FFFFh
SA115
1101100XXX
32
360000h–367FFFh
SA116
1101101XXX
32
368000h–36FFFFh
SA117
1101110XXX
32
370000h–377FFFh
SA118
1101111XXX
32
378000h–37FFFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
17
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Table 9.4 PL064 Sector Architecture (Sheet 4 of 4)
Bank
Bank
D
Sector
SA119
SA120
SA121
SA122
SA123
SA124
SA125
SA126
SA127
SA128
SA129
SA130
SA131
SA132
SA133
SA134
SA135
SA136
Sector Address (A21-A12)
1110000XXX
1110001XXX
1110010XXX
1110011XXX
1110100XXX
1110101XXX
1110110XXX
1110111XXX
1111000XXX
1111001XXX
1111010XXX
1111011XXX
1111100XXX
1111101XXX
1111110XXX
1111111000
1111111001
1111111010
Sector Size (Kwords)
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
4
4
4
Address Range (x16)
380000h–387FFFh
388000h–38FFFFh
390000h–397FFFh
398000h–39FFFFh
3A0000h–3A7FFFh
3A8000h–3AFFFFh
3B0000h–3B7FFFh
3B8000h–3BFFFFh
3C0000h–3C7FFFh
3C8000h–3CFFFFh
3D0000h–3D7FFFh
3D8000h–3DFFFFh
3E0000h–3E7FFFh
3E8000h–3EFFFFh
3F0000h–3F7FFFh
3F8000h–3F8FFFh
3F9000h–3F9FFFh
3FA000h–3FAFFFh
SA137
1111111011
4
3FB000h–3FBFFFh
SA138
1111111100
4
3FC000h–3FCFFFh
SA139
1111111101
4
3FD000h–3FDFFFh
SA140
SA141
1111111110
1111111111
4
4
3FE000h–3FEFFFh
3FF000h–3FFFFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
18
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Table 9.5 PL032 Sector Architecture (Sheet 1 of 2)
Bank
Bank
A
Bank
B
Sector
Sector Address (A20-A12)
Sector Size (Kwords)
Address Range (x16)
SA0
000000000
4
000000h–000FFFh
SA 1
000000001
4
001000h–001FFFh
SA 2
000000010
4
002000h–002FFFh
SA 3
000000011
4
003000h–003FFFh
SA 4
000000100
4
004000h–004FFFh
SA 5
000000101
4
005000h–005FFFh
SA 6
000000110
4
006000h–006FFFh
SA 7
000000111
4
007000h–007FFFh
SA 8
000001XXX
32
008000h–00FFFFh
SA 9
000010XXX
32
010000h–017FFFh
SA 10
000011XXX
32
018000h–01FFFFh
SA 11
000100XXX
32
020000h–027FFFh
SA 12
000101XXX
32
028000h–02FFFFh
SA 13
000110XXX
32
030000h–037FFFh
SA 14
000111XXX
32
038000h–03FFFFh
SA 15
001000XXX
32
040000h–047FFFh
SA16
001001XXX
32
048000h–04FFFFh
SA 17
001010XXX
32
050000h–057FFFh
SA 18
001011XXX
32
058000h–05FFFFh
SA 19
001100XXX
32
060000h–067FFFh
SA 20
001101XXX
32
068000h–06FFFFh
SA 21
001110XXX
32
070000h–077FFFh
SA 22
001111XXX
32
078000h–07FFFFh
SA 23
010000XXX
32
080000h–087FFFh
SA 24
010001XXX
32
088000h–08FFFFh
SA25
010010XXX
32
090000h–097FFFh
SA 26
010011XXX
32
098000h–09FFFFh
SA 27
010100XXX
32
0A0000h–0A7FFFh
SA 28
010101XXX
32
0A8000h–0AFFFFh
SA 29
010110XXX
32
0B0000h–0B7FFFh
SA 30
010111XXX
32
0B8000h–0BFFFFh
SA 31
011000XXX
32
0C0000h–0C7FFFh
SA 32
011001XXX
32
0C8000h–0CFFFFh
SA 33
011010XXX
32
0D0000h–0D7FFFh
SA 34
011011XXX
32
0D8000h–0DFFFFh
SA 35
011100XXX
32
0E0000h–0E7FFFh
SA 36
SA 37
SA 38
011101XXX
011110XXX
011111XXX
32
32
32
0E8000h–0EFFFFh
0F0000h–0F7FFFh
0F8000h–0FFFFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
19
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Table 9.5 PL032 Sector Architecture (Sheet 2 of 2)
Bank
Bank
C
Bank
D
Sector
Sector Address (A20-A12)
Sector Size (Kwords)
Address Range (x16)
SA39
100000XXX
32
100000h–107FFFh
SA40
SA41
100001XXX
100010XXX
32
32
108000h–10FFFFh
110000h–117FFFh
SA42
100011XXX
32
118000h–11FFFFh
SA43
100100XXX
32
120000h–127FFFh
SA44
100101XXX
32
128000h–12FFFFh
SA45
100110XXX
32
130000h–137FFFh
SA46
100111XXX
32
138000h–13FFFFh
SA47
101000XXX
32
140000h–147FFFh
SA48
101001XXX
32
148000h–14FFFFh
SA49
SA50
101010XXX
101011XXX
32
32
150000h–157FFFh
158000h–15FFFFh
SA51
101100XXX
32
160000h–167FFFh
SA52
101101XXX
32
168000h–16FFFFh
SA53
101110XXX
32
170000h–177FFFh
SA54
101111XXX
32
178000h–17FFFFh
SA55
110000XXX
32
180000h–187FFFh
SA56
110001XXX
32
188000h–18FFFFh
SA57
110010XXX
32
190000h–197FFFh
SA58
110011XXX
32
198000h–19FFFFh
SA59
110100XXX
32
1A0000h–1A7FFFh
SA60
110101XXX
32
1A8000h–1AFFFFh
SA61
110110XXX
32
1B0000h–1B7FFFh
SA62
110111XXX
32
1B8000h–1BFFFFh
SA63
111000XXX
32
1C0000h–1C7FFFh
SA64
111001XXX
32
1C8000h–1CFFFFh
SA65
111010XXX
32
1D0000h–1D7FFFh
SA66
111011XXX
32
1D8000h–1DFFFFh
SA67
111100XXX
32
1E0000h–1E7FFFh
SA68
111101XXX
32
1E8000h–1EFFFFh
SA69
111110XXX
32
1F0000h–1F7FFFh
SA70
111111000
4
1F8000h–1F8FFFh
SA71
111111001
4
1F9000h–1F9FFFh
SA72
111111010
4
1FA000h–1FAFFFh
SA73
111111011
4
1FB000h–1FBFFFh
SA74
111111100
4
1FC000h–1FCFFFh
SA75
111111101
4
1FD000h–1FDFFFh
SA76
111111110
4
1FE000h–1FEFFFh
SA77
111111111
4
1FF000h–1FFFFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
20
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Table 9.6 Secured Silicon Sector Addresses
Sector Size
64 words
Customer-Lockable Area
Address Range
000040h-00007Fh
9.8 Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection
verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for
programming equipment to automatically match a device to be programmed with its corresponding
programming algorithm. However, the autoselect codes can also be accessed in-system through the
command register.
When using programming equipment, the autoselect mode requires VID on address pin A9. Address
pins must be as shown in Table 9.7. In addition, when verifying sector protection, the sector address
must appear on the appropriate highest order address bits (see Table 9.3). Table 9.7 show the
remaining address bits that are don’t care. When all necessary bits have been set as required, the
programming equipment may then read the corresponding identifier code on DQ7–DQ0. However,
the autoselect codes can also be accessed in-system through the command register, for instances
when the device is erased or programmed in a system without access to high voltage on the A9 pin.
The command sequence is illustrated in Table 15.1. Note that if a Bank Address (BA) (on address
bits PL064: A21–A19, PL032: A20–A18) is asserted during the third write cycle of the autoselect
command, the host system can read autoselect data that bank and then immediately read array data
from the other bank, without exiting the autoselect mode.
To access the autoselect codes in-system, the host system can issue the autoselect command via
the command register, as shown in Table 15.1. This method does not require VID. Refer to the
Autoselect Command Sequence for more information.
Table 9.7 Autoselect Codes (High Voltage Method)
Description
CE# OE# WE#
Read Cycle 1
L
Read Cycle 2
L
Read Cycle 3
L
Device ID
L
Secured Silicon
Indicator Bit
(DQ7, DQ6)
A10 A9
A5
to
A8 A7 A6 A4 A3 A2 A1 A0
1
Manufacturer ID:
Eon
Sector Protection
Verification
Amax
to
A12
L
L
L
L
L
L
H
H
H
H
X
BA
BA
X
SA
X
BA (See Note)
X
V ID
VI D
VI D
VI D
H
L
X
X
X
L
L
L
X
L
L
L
L
X
L
L
X
DQ15
to DQ0
001Ch
007Fh
L
L
L
L
L
L
L
H 227Eh
H
H
H
L
2202h (PL064)
220Ah (PL032)
H
H
H
H
2201h (PL064)
2201h (PL032)
L
L
H
L
0001h (protected),
0000h (unprotected)
L
L
H
H
DQ6=1
(customer locked)
L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don’t care.
Note
1. A8=H is recommended for Manufacturing ID check. If a manufacturing ID is read with A8=L, the chip will
output a configuration code 7Fh.
2. A9 = V ID is for HV A9 Autoselect mode only. A9 must be ≤ Vcc (CMOS logic level) for Command Autoselect
Mode.
When Polling the Secured Silicon indicator bit the Bank Address (BA) should be set within the address range
004000h-03FFFFh.
B
B
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
21
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
9.9 Selecting a Sector Protection Mode
Table 9.8 PL064 Boot Sector/Sector Block Addresses for Protection/Unprotection
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11-SA14
SA15-SA18
SA19-SA22
SA23-SA26
SA27-SA30
SA31-SA34
SA35-SA38
SA39-SA42
SA43-SA46
SA47-SA50
SA51-SA54
SA55-SA58
SA59-SA62
SA63-SA66
SA67-SA70
SA71-SA74
SA75-SA78
SA79-SA82
SA83-SA86
SA87-SA90
SA91-SA94
SA95-SA98
SA99-SA102
SA103-SA106
SA107-SA110
SA111-SA114
SA115-SA118
SA119-SA122
SA123-SA126
SA127-SA130
SA131
SA132
SA133
SA134
SA135
SA136
SA137
SA138
SA139
SA140
SA141
A21-A12
0000000000
0000000001
0000000010
0000000011
0000000100
0000000101
0000000110
0000000111
0000001XXX
0000010XXX
0000011XXX
00001XXXXX
00010XXXXX
00011XXXXX
00100XXXXX
00101XXXXX
00110XXXXX
00111XXXXX
01000XXXXX
01001XXXXX
01010XXXXX
01011XXXXX
01100XXXXX
01101XXXXX
01110XXXXX
01111XXXXX
10000XXXXX
10001XXXXX
10010XXXXX
10011XXXXX
10100XXXXX
10101XXXXX
10110XXXXX
10111XXXXX
11000XXXXX
11001XXXXX
11010XXXXX
11011XXXXX
11100XXXXX
11101XXXXX
11110XXXXX
1111100XXX
1111101XXX
1111110XXX
1111111000
1111111001
1111111010
1111111011
1111111100
1111111101
1111111110
1111111111
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Sector/Sector Block Size
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
32 Kwords
32 Kwords
32 Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
128 (4x32) Kwords
32 Kwords
32 Kwords
32 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
22
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
The device is shipped with all sectors unprotected. Optional Eon programming services enable programming
and protecting sectors at the factory prior to shipping the device. Contact your local sales office for
details.
It is possible to determine whether a sector is protected or unprotected. See the Table 9.6 Secured
Silicon Sector Addresses for details.
10. Sector Protection
The PL064, and PL032 features several levels of sector protection, which can disable both the
program and erase operations in certain sectors or sector groups:
10.1 Persistent Sector Protection
A command sector protection method that replaces the old 11 V controlled protection method.
10.2 WP# Hardware Protection
A write protect pin that can prevent program or erase operations in sectors SA0, SA1, SA140 and
SA141. (PL064) / SA0, SA1, SA76 and SA77. (PL032)
The WP# Hardware Protection feature is always available, independent of the software managed
protection method chosen.
10.3 Selecting a Sector Protection Mode
All parts default to operate in the Persistent Sector Protection mode. There are two one-time
programmable nonvolatile bits that define which sector protection method will be used. The device is
shipped with all sectors unprotected. Optional Eon’s programming services enable programming
and protecting sectors at the factory prior to shipping the device. Contact your local sales office for
details.
It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode for
details.
11. Persistent Sector Protection
The Persistent Sector Protection method replaces the 11 V controlled protection method in previous
flash devices. This new method provides the sector protection states:
■ Persistently Locked—The sector is protected and cannot be changed.
To achieve these states, two types of “bits” are used:
■ Persistent Protection Bit
■ Persistent Protection Bit Lock
11.1 Persistent Protection Bit (PPB)
A single Persistent (non-volatile) Protection Bit is assigned to a maximum four sectors (see the
sector address tables for specific sector protection groupings). All 4 Kword boot-block sectors have
individual sector Persistent Protection Bits (PPBs) for greater flexibility. Each PPB is individually
modifiable through the PPB Write Command.
The device erases all PPBs in parallel. If any PPB requires erasure, the device must be instructed to
preprogram all of the sector PPBs prior to PPB erasure. Otherwise, a previously erased sector PPBs
can potentially be over-erased. The flash device does not have a built-in means of preventing sector
PPBs over-erasure.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
23
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
11.2 Persistent Protection Bit Lock (PPB Lock)
The Persistent Protection Bit Lock (PPB Lock) is a global volatile bit. When set to “1”, the PPBs
cannot be changed. When cleared (“0”), the PPBs are changeable. There is only one PPB Lock bit
per device. The PPB Lock is cleared after power-up or hardware reset. There is no command
sequence to unlock the PPB Lock.
The WP#/ACC write protect pin adds a final level of hardware protection to sectors SA0, SA1,
SA140 and SA141. (PL064) / SA0, SA1, SA76 and SA77. (PL032). When this pin is low it is not
possible to change the contents of these sectors. These sectors generally hold system boot code.
The WP#/ACC pin can prevent any changes to the boot code that could override the choices made
while setting up sector protection during system initialization.
For customers who are concerned about malicious viruses there is another level of security - the
persistently locked state. To persistently protect a given sector or sector group, the PPBs associated
with that sector need to be set to “1”. Once all PPBs are programmed to the desired settings, the
PPB Lock should be set to “1”. Setting the PPB Lock automatically disables all program and erase
commands to the Non-Volatile PPBs. In effect, the PPB Lock “freezes” the PPBs into their current
state. The only way to clear the PPB Lock is to go through a power cycle.
The best protection is achieved by executing the PPB lock bit set command early in the boot
code, and protect the boot code by holding WP#/ACC = VIL.
In summary, if the PPB is set, and the PPB lock is set, the sector is protected and the protection can
not be removed until the next power cycle clears the PPB lock. If the user attempts to program or
erase a protected sector, the device ignores the command and returns to read mode. A program
command to a protected sector enables status polling for approximately 1 µs before the device
returns to read mode without having modified the contents of the protected sector. An erase
command to a protected sector enables status polling for approximately 50 µs after which the device
returns to read mode without having erased the protected sector.
The programming of the PPB, and PPB lock for a given sector can be verified by writing a PPB/ PPB
lock verify command to the device. There is an alternative means of reading the protection status.
Take RESET# to VIL and hold WE# at VIH. (The high voltage A9 Autoselect Mode also works for
reading the status of the PPBs). Scanning the addresses (A18–A11) while (A6, A1, A0) = (0, 1, 0)
will produce a logical ‘1” code at device output DQ0 for a protected sector or a “0” for an unprotected
sector. In this mode, the other addresses are don’t cares. Address location with A1 = VIL are
reserved for autoselect manufacturer and device codes.
12. Write Protect (WP#)
The Write Protect feature provides a hardware method of protecting the upper two and lower two
sectors without using VID. This function is provided by the WP# pin and overrides the previously
discussed High Voltage Sector Protection method.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in
the two outermost 4 Kword sectors on both ends of the flash array independent of whether it was
previously protected or unprotected.
If the system asserts VIH on the WP#/ACC pin, the device reverts the upper two and lower two
sectors to whether they were last set to be protected or unprotected. That is, sector protection or
unprotection for these sectors depends on whether they were last protected or unprotected using
the method described in the High Voltage Sector Protection .
Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the
device may result.
13. High Voltage Sector Protection
Sector protection and unprotection may also be implemented using programming equipment. The
procedure requires high voltage (VID) to be placed on the RESET# pin. Refer to Figure 13.1 for
details on this procedure. Note that for sector unprotect, all unprotected sectors must first be
protected prior to the first sector write cycle.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
24
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 13.1 In-System Sector Protection/Sector Unprotection Algorithms
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
25
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
13.1 Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system.
The Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode,
formerly protected sectors can be programmed or erased by selecting the sector addresses. Once
VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure
13.2 shows the algorithm, and Figure 21.1 shows the timing diagrams, for this feature. While PPB
lock is set, the device cannot enter the Temporary Sector Unprotection Mode.
Figure 13.2 Temporary Sector Unprotect Operation
Notes:
1.
2.
All protected sectors unprotected (If WP#/ACC = VIL, upper two and lower two sectors will remain
protected).
All previously protected sectors are protected once again
13.2 Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector feature provides a Flash memory region that enables permanent part
identification through an Electronic Serial Number (ESN). The 64-word Secured Silicon sector is
customer-lockable words that can be programmed and locked by the customer. The Secured Silicon
sector is located at addresses 000040h-00007Fh. Indicator bit DQ6 is used to indicate the customer
locked status of the part.
The system accesses the Secured Silicon Sector through a command sequence (see the Enter/Exit
Secured Silicon Sector Command Sequence). After the system has written the Enter Secured
Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses
normally occupied by the boot sectors. This mode of operation continues until the system issues the
Exit Secured Silicon Sector command sequence, or until power is removed from the device. Once
the Enter SecSi Sector Command sequence has been entered, the standard array cannot be
accessed until the Exit SecSi Sector command has been entered or the device has been reset. On
power-up, or following a hardware reset, the device reverts to sending commands to the normal
address space. Note that the ACC function and unlock bypass modes are not available when the
Secured Silicon Sector is enabled.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
26
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
13.2.1 Customer-Lockable Area (64 words)
The customer-lockable area of the Secured Silicon Sector (000040h-00007Fh) is shipped
unprotected, which allows the customer to program and optionally lock the area as appropriate for
the application. The Secured Silicon Sector Customer-locked Indicator Bit (DQ6) is shipped as “0”
and can be permanently locked to “1” by issuing the Secured Silicon Protection Bit Program
Command. The Secured Silicon Sector can be read any number of times, but can be programmed
and locked only once. Note that the accelerated programming (ACC) and unlock bypass functions
are not available when programming the Secured Silicon Sector.
The Customer-lockable Secured Silicon Sector area can be protected using one of the following
procedures:
■ Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then follow
the in-system sector protect algorithm as shown in Figure 13.1 , except that RESET# may be at
either VIH or VID. This allows in-system protection of the Secured Silicon Sector Region without
raising any device pin to a high voltage. Note that this method is only applicable to the Secured
Silicon Sector.
■ To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm shown in
Figure 13.3.
■ Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured
Silicon Sector Region command sequence to return to reading and writing the remainder of the
array.
The Secured Silicon Sector lock must be used with caution since, once locked, there is no procedure
available for unlocking the Secured Silicon Sector area and none of the bits in the Secured Silicon
Sector memory space can be modified in any way.
13.2.2 Secured Silicon Sector Protection Bits
The Secured Silicon Sector Protection Bits prevent programming of the Secured Silicon Sector
memory area. Once set, the Secured Silicon Sector memory area contents are non-modifiable.
Figure 13.3 Secured Silicon Sector Protect Verify
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
27
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
13.3 Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes. In addition, the following hardware data protection measures
prevent accidental erasure or programming, which might otherwise be caused by spurious system
level signals during VCC power-up and power-down transitions, or from system noise.
13.3.1 Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data
during VCC power-up and power-down. The command register and all internal program/erase
circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored
until VCC is greater than VLKO. The system must provide the proper signals to the control pins to
prevent unintentional writes when VCC is greater than VLKO.
13.3.2 Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE#, CE#, or WE# do not initiate a write cycle.
13.3.3 Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate
a write cycle, CE# and WE# must be a logical zero while OE# is a logical one.
13.3.4 Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on
the rising edge of WE#. The internal state machine is automatically reset to the read mode on
power-up.
14. Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software
interrogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC ID-independent,
and forward- and backward-compatible for the specified flash device families. Flash vendors can
standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h, any time the device is ready to read array data. The system can read CFI information
at the addresses given in Table 14.1 to Table 14.4. To terminate reading CFI data, the system must
write the reset command. The CFI Query mode is not accessible when the device is executing an
Embedded Program or embedded Erase algorithm.
The system can also write the CFI query command when the device is in the autoselect mode. The
device enters the CFI query mode, and the system can read CFI data at the addresses given in
Table 14.1 to Table 14.4. The system must write the reset command to return the device to reading
array data.
For further information, please refer to the CFI Specification and CFI Publication 100. Contact your
local sales office for copies of these documents.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
28
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Table 14.1 CFI Query Identification String
Addresses
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
Data
Description
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Table 14.2 System Interface String
Addresses
Data
1Bh
0027h
1Ch
0036h
1Dh
0000h
Description
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0003h
Typical timeout per single byte/word write 2 µs
N
N
20h
0004h
Typical timeout for Min. size buffer write 2 µs (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2 ms
22h
0000h
Typical timeout for full chip erase 2 ms (00h = not supported)
N
N
N
23h
0005h
Max. timeout for byte/word write 2 times typical
24h
0005h
Max. timeout for buffer write 2 times typical
25h
26h
0004h
0004h
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
N
Table 14.3 Device Geometry Definition
Addresses
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
Data
0017h (PL064)
0016h (PL032)
0001h
0000h
0006h
0000h
0003h
0007h
0000h
0020h
0000h
007Dh (PL064)
003Dh (PL032)
0000h
0000h
0001h
0007h
0000h
0020h
0000h
Description
N
Device Size = 2 byte
Flash Device Interface description (refer to CFI publication 100)
N
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
29
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
Table 14.4 Primary Vendor-Specific Extended Query
Addresses
40h
41h
42h
43h
44h
Data
0050h
0052h
0049h
0031h
0034h
45h
0008h
46h
0002h
47h
0001h
48h
0001h
49h
0002h
4Ah
0077h (PL064)
003Fh (PL032)
4Bh
0000h
4Ch
0001h
4Dh
0085h
4Eh
0095h
Description
Query-unique ASCII string “PRI”
Major version number, ASCII (reflects modifications to the silicon)
Minor version number, ASCII (reflects modifications to the CFI table)
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Sector Protect
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
00h = High Voltage Sector Protection
01h = High Voltage + In-System Sector Protection
02h = HV + In-System Software Command Sector Protection
Simultaneous Operation
00 = Not Supported, X = Number of Sectors excluding Bank 1
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Table 14.4 Primary Vendor-Specific Extended Query (Continued)
Addresses
Data
Description
Top/Bottom Boot Sector Flag
00h = Uniform device, 01h = Both top and bottom boot with write protect,
02h = Bottom Boot Device, 03h = Top Boot Device,
04h = Both Top and Bottom
Program Suspend
0 = Not supported, 1 = Supported
Unlock Bypass
00 = Not Supported, 01 = Supported
4Fh
0001h
50h
0001h
51h
0001h
52h
0007h
53h
000Fh
54h
0009h
55h
0005h
Erase Suspend Latency Maximum 2 μs
56h
0005h
Program Suspend Latency Maximum 2 μs
Secured Silicon Sector (Customer OTP Area) Size 2N bytes
Hardware Reset Low Time-out during an embedded algorithm to read
N
mode Maximum 2 ns
Hardware Reset Low Time-out not during an embedded algorithm to read
N
mode Maximum 2 ns
N
N
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
30
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
57h
58h
59h
5Ah
5Bh
0004h
0017h (PL064)
000Fh (PL032)
0030h (PL064)
0018h (PL032)
0030h (PL064)
0018h (PL032)
0017h (PL064)
000Fh (PL032)
Bank Organization
00 = Data at 4Ah is zero, X = Number of Banks
Bank 1 Region Information
X = Number of Sectors in Bank 1
Bank 2 Region Information
X = Number of Sectors in Bank 2
Bank 3 Region Information
X = Number of Sectors in Bank 3
Bank 4 Region Information
X = Number of Sectors in Bank 4
15. Command Definitions
Writing specific address and data commands or sequences into the command register initiates
device operations. Table 15.1 defines the valid register command sequences. Writing incorrect
address and data values or writing them in the improper sequence may place the device in an
unknown state. A reset command is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is
latched on the rising edge of WE# or CE# , whichever happens first. Refer to AC Characteristic for
timing diagrams.
15.1 Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data. Each bank is ready to read array data after completing an Embedded
Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the corresponding bank enters the erasesuspend-read mode, after which the system can read data from any non-erase-suspended sector
within the same bank. The system can read array data using the standard read timing, except that if
it reads at an address within erase-suspended sectors, the device outputs status data. After
completing a programming operation in the Erase Suspend mode, the system may once again read
array data with the same exception. See Erase Suspend/Erase Resume Commands for more
information.
After the device accepts a Program Suspend command, the corresponding bank enters the
program-suspend-read mode, after which the system can read data from any non-programsuspended sector within the same bank. See Program Suspend/Program Resume Commands for
more information.
The system must issue the reset command to return a bank to the read (or erase-suspend-read)
mode if DQ5 goes high during an active program or erase operation, or if the bank is in the
autoselect mode. See the next section, Reset Command , for more information.
See also Requirements for Reading Array Data for more information. The table AC Characteristic
provides the read parameters, and Figure 16.2 shows the timing diagram.
15.2 Reset Command
Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits
are don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence
before erasing begins. This resets the bank to which the system was writing to the read mode. Once
erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence
before programming begins. This resets the bank to which the system was writing to the read mode.
If the program command sequence is written to a bank that is in the Erase Suspend mode, writing
the reset command returns that bank to the erase-suspend-read mode. Once programming begins,
however, the device ignores reset commands until the operation is complete.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
31
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
The reset command may be written between the sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the reset command must be written to return to the read
mode. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset
command returns that bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the banks
to the read mode (or erase-suspend-read mode if that bank was in Erase Suspend and programsuspend-read mode if that bank was in Program Suspend).
15.3 Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and device
codes, and determine whether or not a sector is protected. The autoselect command sequence may
be written to an address within a bank that is either in the read or erase-suspend-read mode. The
autoselect command may not be written while the device is actively programming or erasing in the
other bank.
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by
a third write cycle that contains the bank address and the autoselect command. The bank then
enters the autoselect mode. The system may read any number of autoselect codes without
reinitiating the command sequence.
Table 15.1 shows the address and data requirements. To determine sector protection information,
the system must write to the appropriate bank address (BA) and sector address (SA).
The system must write the reset command to return to the read mode (or erase-suspend-read mode
if the bank was previously in Erase Suspend).
15.4 Enter/Exit Secured Silicon Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing a random, eight word
electronic serial number (ESN). The system can access the Secured Silicon Sector region by
issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to
access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Silicon
Sector command sequence. The Exit Secured Silicon Sector command sequence returns the device
to normal operation. The Secured Silicon Sector is not accessible when the device is executing an
Embedded Program or embedded Erase algorithm. Table 15.1 shows the address and data
requirements for both command sequences. See also Secured Silicon Sector Flash Memory Region
for further information. Note that the ACC function and unlock bypass modes are not available when
the Secured Silicon Sector is enabled.
15.5 Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing
two unlock write cycles, followed by the program set-up command. The program address and data
are written next, which in turn initiate the Embedded Program algorithm. The system is not required
to provide further controls or timings. The device automatically provides internally generated
program pulses and verifies the programmed cell margin. Table 15.1 shows the address and data
requirements for the program command sequence. Note that the Secured Silicon Sector, autoselect,
and CFI functions are unavailable when a [program/erase] operation is in progress.
When the Embedded Program algorithm is complete, that bank then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by
using DQ7, DQ6, or RY/BY#. Refer to Write Operation Status for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that
a hardware reset immediately terminates the program operation. The program command sequence
should be reinitiated once that bank has returned to the read mode, to ensure data integrity. Note
that the Secured Silicon Sector, autoselect and CFI functions are unavailable when the Secured
Silicon Sector is enabled.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
32
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Programming is allowed in any sequence and across sector boundaries. A bit cannot be
programmed from “0” back to a “1.” Attempting to do so may cause that bank to set DQ5 = 1, or
cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a
succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.”
15.5.1 Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program data to a bank faster than using the
standard program command sequence. The unlock bypass command sequence is initiated by
first writing two unlock cycles. This is followed by a third write cycle containing the unlock
bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock
bypass program command sequence is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass program command, A0h; the second cycle
contains the program address and data. Additional data is programmed in the same manner.
This mode dispenses with the initial two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Table 15.1 shows the
requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset
commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle
unlock bypass reset command sequence.
The device offers accelerated program operations through the WP#/ACC pin. When the system
asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode.
The system may then write the two-cycle Unlock Bypass program command sequence. The
device uses the higher voltage on the WP#/ ACC pin to accelerate the operation. Note that the
WP#/ACC pin must not be at VHH any operation other than accelerated programming, or device
damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected;
inconsistent behavior of the device may result.
Figure 15.1 illustrates the algorithm for the program operation. Refer to the table
Erase/Program Operations for parameters, and Figure 20.6 for timing diagrams.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
33
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 15.1 Program Operation
Note
See Table 15.1 for program command sequence.
15.6 Write Buffer Programming Operation
Write Buffer Programming allows the system to write a maximum of 32 words in one programming
operation. The results in a faster effective word programming time than the standard “word”
programming algorithms. The Write Buffer Programming command sequence is initiated by first
writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load
command written at the starting address in which programming will occur. At this point, the system
writes the number of “ word locations minus 1 “ that will be loaded into the page buffer at the
starting address in which programming will occur. This tells the device how many write buffer
addresses will be loaded with data and therefore when to expect the “Program Buffer of Flash”
confirm command. The number of locations to program cannot exceed the size of the write buffer or
the operation will abort. (NOTE: the number loaded = the number of locations to program minus 1.
For example, if the system will program 6 address locations, then 05h should be written to the
device.)
The system then writes the starting address/data combination. This starting address is the first
address/data pair to be programmed, and selects the “write-buffer-page” address. All subsequent
address/data pairs must fall within the “selected-write-buffer-page”.
The “write- buffer-page” is selected by using the addresses Amax– A5
The “write- buffer-page” addresses must be the same for all address/data pairs loaded into the
write buffer. (This means Write Buffer Programming cannot be performed across multiple “writebuffer-page”. This also means that Write Buffer Programming cannot be performed across multiple
sectors. If the system attempts to load programming data outside of the selected “write- buffer-page”,
the operation will ABORT.)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
34
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
After writing the Starting Address/Data pair, the system then writes the remaining address/data pars
into the write buffer. Write buffer locations may be loaded in any order.
Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter
will be decremented for every data load operation. Also, the last data loaded at a location
before the “Program Buffer to Flash” confirm command will be programmed into the device. It is the
software’s responsibility to comprehend ramifications of loading a write-buffer location more than
once. The counter decrements for each data load operation, NOT for each unique write-bufferaddress location.
Once the specified number of write buffer locations have been loaded, the system must then write
the “Program Buffer to Flash” command at the Sector Address. Any other address/data write
combinations will abort the Write Buffer Programming operation. The device will then “go busy”. The
Data Bar polling techniques should be used while monitoring the last address location loaded into
the write buffer. This eliminates the need to store an address in memory because the system can
load the last address location, issue the program confirm command at the last loaded address
location, and then data bar poll at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be
monitored to determine the device status during Write Buffer Programming.
The write-buffer “embedded” programming operation can be suspended using the standard
suspend/resume commands. Upon successful completion of the Write Buffer Programming
operation, the device will return to READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
▇
▇
▇
▇
Load a value that is greater than the page buffer size during the “Number of Locations to
Program” step.
Write to an address in a sector different than the one specified during the “Write-Buffer-Load”
command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting
Address” during the “write buffer data loading” stage of the operation.
Write data other than the “Confirm Command” after the specified number of “data load” cycle.
The ABORT condition is indicated by DQ = 1, DQ7 = DATA# (for the “last address location loaded”) ,
DQ6 = TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was
ABORTED. A “Write-to-Buffer-Abort reset” command sequence is required when using the Write
Buffer Programming feature in Unlock Bypass mode. Note that the Secured Silicon sector,
autoselect, and CFI functions are unavailable when a program operation is in progress.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed. Write buffer programming is allowed in any sequence of memory (or address)
locations. These flash devices are capable of handling multiple write buffer programming operations
on the same write buffer address range without intervening erases.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
35
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
36
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
15.7 Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing
two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then
followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The
device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically preprograms and verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any controls or timings during these
operations. Table 15.1 shows the address and data requirements for the chip erase command
sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read mode and
addresses are no longer latched. The system can determine the status of the erase operation by
using DQ7, DQ6, DQ2, or RY/ BY#. Refer to Write Operation Status for information on these status
bits.
Any commands written during the chip erase operation are ignored. Note that Secured Silicon Sector,
autoselect, and CFI functions are unavailable when a [program/erase] operation is in progress.
However, note that a hardware reset immediately terminates the erase operation. If that occurs, the
chip erase command sequence should be reinitiated once that bank has returned to reading array
data, to ensure data integrity.
Figure 15.2 illustrates the algorithm for the erase operation. Refer to the tables in Erase/Program
Operations for parameters, and Figure 20.8 for timing diagrams.
15.8 Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by
writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written,
and are then followed by the address of the sector to be erased, and the sector erase command.
Table 15.1 shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram prior to erase. The Embedded Erase
algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any controls or timings during these
operations. Note that Secured Silicon Sector, autoselect, and CFI functions are unavailable when a
[program/erase] operation is in progress.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section
on DQ3: Sector Erase Timer). The time-out begins from the rising edge of the final WE# pulse in the
command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data and
addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the
system can read data from the non-erasing bank. The system can determine the status of the erase
operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to Write Operation
Status for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other
commands are ignored. However, note that a hardware reset immediately terminates the erase
operation. If that occurs, the sector erase command sequence should be reinitiated once that bank
has returned to reading array data, to ensure data integrity.
Figure 15.2 illustrates the algorithm for the erase operation. Refer to the tables in Erase/Program
Operations for parameters, and Figure 20.8 for timing diagrams.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
37
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 15.2 Erase Operation
Notes
1.
2.
See Table 15.1 for erase command sequence.
See the section on DQ3 for information on the sector erase timer.
15.9 Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and
then read data from, or program data to, any sector not selected for erasure. The bank address is
required when writing this command. This command is valid only during the sector erase operation,
including the 80 µs time-out period during the sector erase command sequence. The Erase
Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during the sector erase operation, the device requires
a maximum of 35 µs to suspend the erase operation. However, when the Erase Suspend command
is written during the sector erase time-out, the device immediately terminates the time-out period and
suspends the erase operation. Addresses are “don’t-cares” when writing the Erase suspend
command.
After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The
system can read data from or program data to any sector not selected for erasure. (The device
“erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended
sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. Refer to Write Operation
Status for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspendread mode. The system can determine the status of the program operation using the DQ7 or DQ6
status bits, just as in the standard Word Program operation. Refer to Write Operation Status for
more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence.
The device allows reading autoselect codes even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the device exits the autoselect mode, the device
reverts to the Erase Suspend mode, and is ready for another valid operation. Refer to Table 9.6,
Secured Silicon Sector Addresses and Autoselect Command Sequence for details.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
38
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
To resume the sector erase operation, the system must write the Erase Resume command (address
bits are don’t care). The bank address of the erase-suspended bank is required when writing this
command. Further writes of the Resume command are ignored. Another Erase Suspend command
can be written after the chip has resumed erasing.
If the Secured Silicon Sector Protection Bit is verified as programmed without margin, the Secured
Silicon Sector Protection Bit Program Command should be reissued to improve program margin.
After programming a PPB, two additional cycles are needed to determine whether the PPB has been
programmed with margin. If the PPB has been programmed without margin, the program command
should be reissued to improve the program margin. Also note that the total number of PPB
program/erase cycles is limited to 100 cycles. Cycling the PPBs beyond 100 cycles is not
guaranteed.
After erasing the PPBs, two additional cycles are needed to determine whether the PPB has been
erased with margin. If the PPBs has been erased without margin, the erase command should be
reissued to improve the program margin. The programming of the PPB for a given sector or sector
group can be verified by writing a Sector Protection Status command to the device.
15.10 Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming
operation so that data can read from any non-suspended sector. When the Program Suspend
command is written during a programming process, the device halts the programming operation
within tPSL (program suspend latency) and updates the status bits. Addresses are “don’t-cares” when
writing the Program Suspend command. After the programming operation has been suspended, the
system can read array data from any non-suspended sector. The Program Suspend command may
also be issued during a programming operation while an erase is suspended. In this case, data may
be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from
the Secured Silicon Sector area, then user must use the proper command sequences to enter and
exit this region. The system may also write the autoselect command sequence when the device is in
Program Suspend mode. The device allows reading autoselect codes in the suspended sectors,
since the codes are not stored in the memory array. When the device exits the autoselect mode, the
device reverts to Program Suspend mode, and is ready for another valid operation. See “Autoselect
Command Sequence” for more information. After the Program Resume command is written, the
device reverts to programming. The system can determine the status of the program operation using
the DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation Status”
for more information. The system must write the Program Resume command (address bits are
“don’t care”) to exit the Program Suspend mode and continue the programming operation. Further
writes of the Program Resume command are ignored. Another Program Suspend command can be
written after the device has resumed programming.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
39
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
15.11 Command Definitions Tables
Table 15.1 contains the Memory Array Command Definitions.
Command (Notes)
Cycles
Table 15.1 Memory Array Command Definitions
Bus Cycles (Notes 1–4)
Addr
Data
Read (5)
1
RA
RD
Reset (6)
1
XXX
F0
Autoselect
(Note 7)
Manufacturer ID
4
555
AA
Addr
2AA
Data
Addr
Data
55
(BA)
555
90
Addr
Data
(BA)
100
001C
(BA)
000
007F
Device ID (10)
6
555
AA
2AA
55
(BA)
555
90
(BA)
X01
227E
Secured Silicon Sector
Factory Protect (8)
4
555
AA
2AA
55
(BA)
555
90
X03
(8)
Sector Group
Protect Verify(9)
4
555
AAA
2AA
55
(BA)
555
90
(SA)
X02
XX00
/
XX01
Addr
Data
Addr
Data
(BA)
X0E
(10)
(BA)
X0F
(10)
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer
6
555
AA
2AA
55
SA
25
SA
WC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset
3
555
AA
2AA
55
555
F0
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (11)
1
BA
B0
Program/Erase Resume (12)
1
BA
30
CFI Query (13)
1
55
98
555
20
Accelerated Program (15)
2
XX
A0
PA
PD
Unlock Bypass Entry (15)
3
555
AA
2AA
55
Unlock Bypass Program (15)
2
XX
A0
PA
PD
Unlock Bypass Erase (15)
2
XX
80
XX
10
Unlock Bypass CFI (13)(15)
1
XX
98
Unlock Bypass Reset (15)
2
XXX
90
XXX
00
Legend
BA = Address of bank switching to autoselect mode, bypass mode, or erase operation. Determined by PL064 Amax:A19,
PL032: Amax:A18.
PA = Program Address (Amax:A0). Addresses latch on falling edge of WE# or CE# pulse, whichever happens later.
PD = Program Data (DQ15:DQ0) written to location PA. Data latches on rising edge of WE# or CE# pulse, whichever
happens first.
RA = Read Address (Amax:A0).
RD = Read Data (DQ15:DQ0) from location RA.
SA = Sector Address (Amax:A12) for verifying (in autoselect mode) or erasing.
WC = Word Count is the number of write buffer location to load minus 1.
WBL = Write Buffer Location. The address must be within the same write buffer page as PA.
X = Don’t care
Notes
1.
2.
3.
4.
5.
6.
See Table 9.1 for description of bus operations.
All values are in hexadecimal.
Shaded cells in table denote read cycles. All other cycles are write operations.
During unlock and command cycles, when lower address bits are 555 or 2AAh as shown in table, address bits higher
than A11 (except where BA is required) and data bits higher than DQ7 are don’t cares.
No unlock or command cycles required when bank is reading array data.
The Reset command is required to return to reading array (or to erase-suspend-read mode if previously in Erase
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
40
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
7.
8.
9.
10.
11.
12.
13.
14.
15.
Suspend) when bank is in autoselect mode, or if DQ5 goes high (while bank is providing status information).
Fourth cycle of autoselect command sequence is a read cycle. System must provide bank address to obtain
manufacturer ID or device ID information. See Autoselect Command Sequence for more information.
The data is DQ6=1 for customer locked .
The data is 00h for an unprotected sector group and 01h for a protected sector group.
Device ID must be read across cycles 4, 5, and 6. PL064 (X0Eh = 2202h, X0Fh = 2201h), PL032 (X0Eh = 220Ah,
X0Fh = 2201h).
System may read and program in non-erasing sectors, or enter autoselect mode, when in Program/Erase Suspend
mode. Program/ Erase Suspend command is valid only during a sector erase operation, and requires bank address.
Program/Erase Resume command is valid only during Erase Suspend mode, and requires bank address.
Command is valid when device is ready to read array data or when device is in autoselect mode.
WP#/ACC must be at VID during the entire operation of command.
Unlock Bypass Entry command is required prior to any Unlock Bypass operation. Unlock Bypass Reset command is
required to return to the reading array.
Table 15.2 Sector Protection Command Definitions
Command (Notes)
Cycles
Bus Cycles (Notes 1-4)
Addr
Reset
1
XXX
F0
Secured Silicon
Sector Entry (16)
3
555
AA
2AA
55
555
88
Secured Silicon
Sector Exit (16)
4
555
AA
2AA
55
555
90
XX
00
Secured Silicon
Protection Bit
Program (Notes 5, 6)
6
555
AA
2AA
55
555
60
OW
68
OW
48
Secured Silicon
Protection Bit Status
5
555
AA
2AA
55
555
60
OW
48
OW
RD
(0)
PPB Program
(Notes 5, 6, 11)
6
555
AA
2AA
55
555
60
(SA)
WP
68
(SA)
WP
PPB Status
4
555
AA
2AA
55
555
90
(SA)
WP
RD
(0)
All PPB Erase
(Notes 5, 6, 13, 14)
6
555
AA
2AA
55
555
60
WP
60
(SA)
PPB Lock Bit Set
3
555
AA
2AA
55
555
78
PPB Lock Bit Status (15)
4
555
AA
2AA
55
555
58
SA
RD
(1)
Data Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
OW
RD
(0)
48
(SA)
WP
RD
(0)
40
(SA)
WP
RD
(0)
Legend
OW = Address (A7:A0) is (00011010)
PD[3:0] = Password Data (1 of 4 portions)
PPB = Persistent Protection Bit
RD(0) = Read Data DQ0 for protection indicator bit.
RD(1) = Read Data DQ1 for PPB Lock status.
SA = Sector Address where security command applies. Address bits Amax:A12 uniquely select any sector.
SL = Persistent Protection Mode Lock Address (A7:A0) is (00010010)
WP = PPB Address (A7:A0) is (00000010)
X = Don’t care
SPMLB = Persistent Protection Mode Locking Bit
Notes
1.
2.
3.
4.
5.
6.
7.
8.
See Table 9.1 for description of bus operations.
All values are in hexadecimal.
Shaded cells in table denote read cycles. All other cycles are write operations.
During unlock and command cycles, when lower address bits are 555 or 2AAh as shown in table, address
bits higher than A11 (except where BA is required) and data bits higher than DQ7 are don’t cares.
The reset command returns device to reading array.
Cycle 4 programs the addressed locking bit. Cycles 5 and 6 validate bit has been fully programmed when
DQ0 = 1. If DQ0 = 0 in cycle 6, program command must be issued and verified again.
Data is latched on the rising edge of WE#.
Entire command sequence must be entered for each portion of password.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
41
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
9.
10.
11.
12.
13.
14.
15.
16.
Command sequence returns FFh if PPMLB is set.
The password is written over four consecutive cycles, at addresses 0-3.
A 2 µs timeout is required between any two portions of password.
A 100 µs timeout is required between cycles 4 and 5.
A 1.2 ms timeout is required between cycles 4 and 5.
Cycle 4 erases all PPBs. Cycles 5 and 6 validate bits have been fully erased when DQ0 = 0. If DQ0 = 1 in
cycle 6, erase command must be issued and verified again. Before issuing erase command, all PPBs
should be programmed to prevent PPB overerasure.
DQ1 = 1 if PPB locked, 0 if unlocked.
Once the Secured Silicon Sector Entry Command sequence has been entered, the standard array cannot
be accessed until the Exit SecSi Sector command has been entered or the device has been reset.
16. Write Operation Status
The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3,
DQ5, DQ6, and DQ7. Table 16.1 and the following subsections describe the function of these bits.
DQ7 and DQ6 each offer a method for determining whether a program or erase operation is
complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to
determine whether an Embedded Program or Erase operation is in progress or has been completed.
16.1 DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase
algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid
after the rising edge of the final WE# pulse in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum
programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When
the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7.
The system must provide the program address to read valid status information on DQ7. If a program
address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then
that bank returns to the read mode.
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded
Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces
a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to
read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 400 µs, then the bank returns to the read mode. If not all
selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected. However, if the system reads DQ7 at an address
within a protected sector, the status may not be valid.
When the system detects DQ7 has changed from the complement to true data, it can read valid data
at DQ15–DQ0 on the following read cycles. Just prior to the completion of an Embedded Program or
Erase operation, DQ7 may change asynchronously with DQ15–DQ0 while Output Enable (OE#) is
asserted low. That is, the device may change from providing status information to valid data on DQ7.
Depending on when the system samples the DQ7 output, it may read the status or valid data. Even
if the device has completed the program or erase operation and DQ7 has valid data, the data
outputs on DQ15–DQ0 may be still invalid. Valid data on DQ15–DQ0 will appear on successive read
cycles.
Table 16.1 shows the outputs for Data# Polling on DQ7. Figure 16.1 shows the Data# Polling
algorithm. Figure 20.10 shows the Data# Polling timing diagram.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
42
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 16.1 Data# Polling Algorithm
Notes
1.
2.
VA = Valid address for programming. During a sector erase operation, a valid address is any sector
address within the sector being erased. During chip erase, a valid address is any non-protected sector
address.
DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
16.2 RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm
is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in
the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied
together in parallel with a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes
programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read
mode, the standby mode, or one of the banks is in the erase-suspend-read mode.
Table 16.1 shows the outputs for RY/BY#.
16.3 DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or
complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at
any address, and is valid after the rising edge of the final WE# pulse in the command sequence
(prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address
cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the
operation is complete, DQ6 stops toggling.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
43
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6
toggles for approximately 400 µs, then returns to reading array data. If not all selected sectors are
protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected
sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in
progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling.
However, the system must also use DQ2 to determine which sectors are erasing or erasesuspended. Alternatively, the system can use DQ7 (see the DQ7: Data# Polling ).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the
program command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded
Program algorithm is complete.
Table 16.1 shows the outputs for Toggle Bit I on DQ6. Figure 16.2 shows the toggle bit algorithm.
Figure 20.11 shows the toggle bit timing diagrams. Figure 20.12 shows the differences between
DQ2 and DQ6 in graphical form. See also the DQ2: Toggle Bit II .
Figure 16.2 Toggle Bit Algorithm
Note:
The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the DQ6: Toggle Bit I and DQ2: Toggle Bit II for more information.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
44
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
16.4 DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively
erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erasesuspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command
sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected for
erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot
distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison,
indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish
which sectors are selected for erasure. Thus, both status bits are required for sector and mode
information. Refer to Table 16.1 to compare outputs for DQ2 and DQ6.
Figure 16.2 shows the toggle bit algorithm in flowchart form, and the DQ2: Toggle Bit II explains the
algorithm. See also the DQ6: Toggle Bit I . Figure 20.11 shows the toggle bit timing diagram. Figure
20.12 shows the differences between DQ2 and DQ6 in graphical form.
16.5 Reading Toggle Bits DQ6/DQ2
Refer to Figure 16.2 for the following discussion. Whenever the system initially begins reading toggle
bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling.
Typically, the system would note and store the value of the toggle bit after the first read. After the
second read, the system would compare the new value of the toggle bit with the first. If the toggle bit
is not toggling, the device has completed the program or erase operation. The system can read
array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling,
the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the
system should then determine again whether the toggle bit is toggling, since the toggle bit may have
stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has
successfully completed the program or erase operation. If it is still toggling, the device did not
completed the operation successfully, and the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5
has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive
read cycles, determining the status as described in the previous paragraph. Alternatively, it may
choose to perform other system tasks. In this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the operation.
16.6 DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count
limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not
successfully completed.
The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was
previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under
this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5
produces a “1.”
Under both these conditions, the system must write the reset command to return to the read mode
(or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
16.7 DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or
not erasure has begun. (The sector erase timer does not apply to the chip erase command.). When
the time-out period is complete, DQ3 switches from a “0” to a “1.” See also the Sector Erase
Command Sequence.
After the sector erase command is written, the system should read the status of DQ7 (Data# Polling)
or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
45
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all further commands (except Erase
Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device will accept
additional sector erase commands. To ensure the command has been accepted, the system
software should check the status of DQ3 prior to and following each subsequent sector erase
command. If DQ3 is high on the second status check, the last command might not have been
accepted.
Table 16.1 shows the status of DQ3 relative to the other status bits.
Table 16.1 Write Operation Status
Status
Embedded Program
Standard Algorithm
Mode Embedded Erase
Algorithm
Erase
SuspendRead
Erase
Suspend
Mode
Erase
Suspended
Sector
Non-Erase
Suspended
Sector
Erase-Suspend
-Program
Program
Suspend
Mode
(Note 3)
Reading within
Program
Suspended Sector
Reading within
Non-program
Suspended Sector
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/BY#
DQ7#
Toggle
0
N/A
No toggle
0
0
Toggle
0
1
Toggle
0
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Invalid
Invalid
Invalid
Invalid
Invalid
(Not Allowed) (Not Allowed) (Not Allowed) (Not Allowed) (Not Allowed)
Data
Data
Data
Data
Data
1
1
Notes:
1.
2.
3.
DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the
maximum timing limits. Refer to DQ5: Exceeded Timing Limits for more information.
DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate
subsection for further details.
When reading write operation status bits, the system must always provide the bank address where the
Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy
bank.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
46
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
17. Absolute Maximum Ratings
Storage Temperature Plastic Packages
–65°C to +150°C
Ambient Temperature with Power Applied
–65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1)
–0.5 V to +4.0 V
A9, OE#, and RESET# (Note 2)
–0.5 V to +12.0 V
WP#/ACC (Note 2)
–0.5 V to +10.5 V
All other pins (Note 1)
–0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3)
200 mA
Notes:
1.
2.
3.
4.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may
overshoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC
+0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to
20 ns. See Figure 17.1
Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is –0.5 V. During voltage
transitions, A9, OE#, WP#/ACC, and RESET# may overshoot VSS to –2.0 V for periods of up to 20
ns. See Figure 17.1 . Maximum DC input voltage on pin A9, OE#, and RESET# is +12.5 V which
may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5
V which may overshoot to +12.0 V for periods up to 20 ns.
No more than one output may be shorted to ground at a time. Duration of the short circuit should not
be greater than one second.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only; functional operation of the device at these or any other
conditions above those indicated in the operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating conditions for extended periods may affect
device reliability
Figure 17.1 Maximum Overshoot Waveforms
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
47
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
18. Operating Ranges
Operating ranges define those limits between which the functionality of the device is guaranteed.
Industrial (I) Devices
Ambient Temperature (TA) ................–40°C to +85°C
Wireless (W) Devices
Ambient Temperature (TA) ................–25°C to +85°C
Supply Voltages
VCC ...................................................2.7–3.6 V
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
48
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
19.
DC Characteristics
Table 19.1 CMOS Compatible
Parameter
Parameter Description (notes)
Test Conditions
VIN = VSS to VCC,
VCC = VCC max
Min
Typ
Max
Unit
±1.0
µA
VCC = VCC max; VID= 11.5 V
35
µA
ILI
Input Load Current
ILIT
A9, OE#, RESET#
Input Load Current
ILR
Reset Leakage Current
VCC = VCC max; VID= 11.5 V
35
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, OE# = VIH
VCC = VCC max
±1.0
µA
ICC1
VCC Active Read Current
(1, 2)
OE# = VIH, VCC = VCC max
ICC2
VCC Active Write Current (2, 3)
VCC Standby Current (2)
ICC3
5 MHz
20
30
10 MHz
45
55
OE# = VIH, WE# = VIL
15
25
mA
CE#, RESET#, WP#/ACC
= VIO ± 0.3 V
0.2
5
µA
mA
ICC4
VCC Reset Current (2)
RESET# = VSS ± 0.3 V
0.2
5
µA
ICC5
Automatic Sleep Mode
(Notes 2, 4)
VIH = VIO ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
5
µA
ICC6
VCC Active Read-While-Program
Current (1, 2)
OE# = VIH,
ICC7
VCC Active Read-While-Erase
Current (1, 2)
OE# = VIH,
ICC8
VCC Active Program-While-EraseSuspended Current (2, 5)
OE# = VIH
ICC9
VCC Active Page Read Current (2)
OE# = VIH, 4 word Page Read
VIL
Input Low Voltage
VIO = 2.7–3.6 V
–0.5
VIH
Input High Voltage
VIO = 2.7–3.6 V
2
VCC+0.3
V
VHH
Voltage for ACC
Program Acceleration
VCC = 3.0 V ± 10%
8.5
9.5
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 3.0 V ± 10%
10.5
11.5
V
VOL
Output Low Voltage
IOL = 2.0 mA, VCC = VCC min,
VIO = 2.7–3.6 V
0.4
V
VOH
Output High Voltage
IOH = –100 µA, VIO = VCC min
VLKO
Low VCC Lock-Out Voltage (5)
5 MHz
21
45
10 MHz
46
70
5 MHz
21
45
10 MHz
46
70
17
25
mA
15
mA
0.8
V
10
VCC0.2V
2.3
mA
mA
V
2.5
V
Notes
1.
2.
3.
4.
5.
The ICC current listed is typically less than 5 mA/MHz, with OE# at VIH.
Maximum ICC specifications are tested with VCC = VCCmax.
ICC active while Embedded Erase or Embedded Program is in progress.
Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep
mode current is 2 µA.
Not 100% tested.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
49
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
20. AC Characteristic
20.1 Test Conditions
Figure 20.1 Test Setups
3.3 V
2.7 kΩ
Device under Test
CL
6.2 kΩ
Note: Diodes are IN3064 or equivalent
Table 20.1 Test Specifications
Test Conditions
All Speeds
Output Load
Unit
1 TTL gate
Output Load Capacitance, CL (including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
0.0-3.0
V
Input timing measurement reference levels
Vcc/2
V
Output timing measurement reference levels
Vcc/2
V
Input Pulse Levels
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
50
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
20.2 Switching Waveforms
Table 20.2 Key To Switching Waveforms
Figure 20.2 Input Waveforms and Measurement Levels
20.3 VCC Ramp Rate
All DC characteristics are specified for a VCC ramp rate > 1V/100 µs. If the VCC ramp rate is < 1V/100
µs, a hardware reset required.+
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
51
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
20.4
Read Operations
Table 20.3 Read-Only Operations
Parameter
JEDEC
tAVAV
tAVQV
tELQV
Speed Options
Description (Notes)
Read Cycle Time (1)
Address to Output Delay
Test Setup
tGLQV
tEHQZ
tGHQZ
Std.
tRC
tACC
tCE
tPACC
tOE
tDF
tDF
tAXQX
tOH
Chip Enable to Output High Z (3)
Output Enable to Output High Z (1, 3)
Output Hold Time From Addresses,
CE# or OE#, Whichever Occurs First (3)
tOEH
Output Enable Hold Time (1)
CE#, OE# = VIL
OE# = VIL
Chip Enable to Output Delay
Page Access Time
Output Enable to Output Delay
Read
Toggle and Data# Polling
Min
Max
Max
Max
Max
Max
Max
70
70
70
70
25
25
16
16
Unit
ns
ns
ns
ns
ns
ns
ns
Min
5
ns
Min
Min
0
10
ns
ns
Notes
1.
2.
3.
Not 100% tested.
See Figure 20.1 and Table 20.1 for test specifications
Measurements performed by placing a 50 ohm termination on the data pin with a bias of VCC /2. The time
from OE# high to the data bus driven to VCC /2 is taken as tDF.
Figure 20.3 Read Operation Timings
Figure 20.4 Page Read Operation Timings
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
52
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
20.5
Reset
Table 20.4 Hardware Reset (RESET#)
Parameter
JEDEC Std
Description
RESET# Pin Low (During Embedded Algorithms) to Read Mode
tReady
(See Note)
RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode
tReady
(See Note)
tRP RESET# Pulse Width
tRH Reset High Time Before Read (See Note)
tRPD RESET# Low to Standby Mode
tRB RY/BY# Recovery Time
All Speed
Options
Unit
Max
20
µs
Max
500
ns
Min
Min
Min
Min
500
50
20
0
ns
ns
µs
ns
Note
Not 100% tested.
Figure 20.5 Reset Timings
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
53
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
20.6
Erase/Program Operations
Table 20.5 Erase and Program Operations
Parameter
JEDEC
Std
tAVAV
tWC
tAVWL
tWLAX
tDVWH
tWHDX
Speed Options (ns)
70
Description
Write Cycle Time (Note 1)
Min
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tELWL
70
tAH
Address Hold Time
Min
35
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDS
Data Setup Time
Min
30
ns
tDH
Data Hold Time
Min
0
ns
Min
10
ns
tOEPH Output Enable High during toggle bit polling
tGHWL
Unit
tGHWL Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
Min
0
ns
Min
0
ns
Min
35
ns
tCS
CE# Setup Time
tWHEH
tCH
CE# Hold Time
tWLWH
tWP
Write Pulse Width
tWPH
Write Pulse Width High
Min
25
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
Typ
6
µs
tWHDL
tWHWH 1 tWHW H1 Programming Operation (Note 2)
tWHWH 1 tWHW H1 Accelerated Programming Operation (Note 2)
Typ
4
µs
tWHWH 2 tWHW H2 Sector Erase Operation (Note 2)
Typ
0.5
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
ns
Min
35
ns
tBUSY
tPSL
Program Suspend Latency
Max
35
µs
tESL
Erase Suspend Latency
Max
35
µs
Notes:
1.
2.
Not 100% tested.
See Table 21.4 for more information.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
54
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
20.7
Timing Diagrams
Figure 20.6 Program Operation Timings
Notes
1.
PA = program address, PD = program data, DOUT is the true data at the program address
Figure 20.7 Accelerated Program Timing Diagram
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
55
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 20.8 Chip/Sector Erase Operation Timings
Notes
1.
SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation
Status )
Figure 20.9 Back-to-back Read/Write Cycle Timings
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
56
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 20.10 Data# Polling Timings (During Embedded Algorithms)
Note
VA = Valid address. The illustration shows first status cycle after command sequence, last status read cycle,
and array data read cycle
Figure 20.11 Toggle Bit Timings (During Embedded Algorithms)
Notes
1.
VA = Valid address; not required for DQ6. The illustration shows first two status cycle after command
sequence, last status read cycle, and array data read cycle
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
57
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 20.12 DQ2 vs. DQ6
Note
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or
CE# to toggle DQ2 and DQ6.
21. Protect/Unprotect
Table 21.1 Temporary Sector Unprotect
Unit
Parameter
JEDEC
Std
tVIDR
Description
All Speed Options
VID Rise and Fall Time (See Note)
Min
500
ns
tVHH
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary Sector Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for Temporary
Sector Unprotect
Min
4
µs
Note
Not 100% tested
Figure 21.1 Temporary Sector Unprotect Timing Diagram
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
58
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 21.2 Sector/Sector Block Protect and Unprotect Timing Diagram
Notes
1.
For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
21.1 Controlled Erase Operations
Table 21.2 Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
Description (Notes)
JEDEC
Std
70
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
Unit
tELAX
tAH
Address Hold Time
Min
35
ns
tDVEH
tDS
Data Setup Time
Min
30
ns
tEHDX
tDH
tGHEL
tGHEL
Data Hold Time
Min
0
ns
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
25
ns
Typ
6
µs
tWHWH1 tWHWH1 Programming Operation (Note 2)
tWHWH1 tWHWH1 Accelerated Programming Operation (Note 2)
Typ
4
µs
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
Notes
1.
2.
Not 100% tested.
See Erase And Programming Performance for more information.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
59
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 21.3 Alternate CE# Controlled Write (Erase/Program) Operation Timings 555 for program PA
for program
Notes
1.
2.
3.
Figure indicates last two bus cycles of a program or erase operation.
PA = program address, SA = sector address, PD = program data.
DQ7# is the complement of the data written to the device. DOUT is the data written to the device
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
60
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Table 21.4 Erase And Programming Performance
Parameter
Sector Erase Time
Chip Erase Time
Typ (Note 1) Max (Note 2)
0.5
2
PL064
71
113.6
sec
PL032
39
62.4
sec
6
100
µs
Word Program Time
Accelerated Word Program Time
Chip Program Time
(Note 3)
Unit
sec
Comments
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
4
60
µs
PL064
25.2
50.4
sec
PL032
12.6
25.2
sec
Notes
1.
2.
3.
4.
5.
6.
Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 100,000 cycles.
Additionally, programming typical assume checkerboard pattern. All values are subject to change.
Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles. All values are subject to change.
The typical chip programming time is considerably less than the maximum chip programming time listed,
since most bytes program faster than the maximum program times listed.
In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before
erasure.
System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the
program command. See Table 15.1 for further information on command definitions.
The device has a minimum erase and program cycle endurance of 100,000 cycles.
22. 48-PIN TSOP PACKAGE CAPACITANCE
Parameter Symbol
Test Setup
Typ
Max
Unit
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
CIN
B
Parameter
Description
B
B
B
B
B
B
B
B
B
B
B
Note: Test conditions are Temperature = 25°C and f = 1.0 MHz
23. BGA Pin Capacitance
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6.3
7
pF
COUT
Output Capacitance
VOUT = 0
7
8
pF
CIN2
Control Pin Capacitance
VIN = 0
5.5
8
pF
CIN3
WP#/ACC Pin
Capacitance
VIN = 0
11
12
pF
Notes
1.
2.
Sampled, not 100% tested.
Test conditions TA = 25°C, f = 1.0 MHz.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
61
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
24. Physical Dimensions
Figure 24.1 TSOP 48-pin 12mm x 20mm
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
62
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
63
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 24.2 48-ball TFBGA package outline (PL032)
SYMBOL
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
64
DIMENSION IN MM
MIN.
NOR
MAX
A
---
---
1.30
A1
0.23
0.29
---
A2
0.84
0.91
---
D
7.90
8.00
8.10
E
5.90
6.00
6.10
D1
---
5.60
---
E1
---
4.00
---
e
---
0.80
---
b
0.35
0.40
Note : 1. Coplanarity: 0.1 mm
0.45
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Figure 24.3 56-ball Fine-Pitch Ball Grid Array (FBGA) 7 x 9 mm Package
SYMBOL
DIMENSION IN MM
MIN.
NOR
MAX
A
---
---
1.20
A1
0.25
0.30
0.35
A2
0.71
0.76
0.81
D
6.90
7.00
7.10
E
8.90
9.00
9.10
D1
---
5.60
---
E1
---
5.60
---
e
---
0.80
---
b
0.35
0.40
0.45
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
65
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27
EN29PL064/032
Revisions List
Revision No
Description
A
Initial Release
2007/9/19
Update the 48 Ball package thickness from 1.31mm to 1.2mm in
2007/12/21
page 64
Correct the Manufacturer ID at Table 9.7 Autoselect Codes (High
2008/1/3
B
C
D
Date
Voltage Method) in page 21
1. Change the customer-lockable words from 128 words to 64
words in page 1, 21, 26 and 27
2. Change the page access times from 20ns to 25ns in page 1,
2, 5 and 52.
3. Remove 65ns speed grade in page 1, 2, 5, 52, 54 and 59.
4. Change VID from 11.5-12.5V to 10.5-11.5V in page 11and 49.
2008/3/27
5. Update the CFI table in page 29 and 30.
6. Remove the 48-ball FBGA Connection Diagrams for PL064 in
page 8
7. Correct the 48 Ball package thickness from 1.2mm to 1.3mm
in page 64
8. Add the 56 Ball FBGA Connection Diagrams and Physical
Dimensions in page 9 and page 65
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
66
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2008/03/27