6MBI50S-140 IGBT Modules IGBT MODULE ( S series) 1400V / 50A 6 in one-package Features · Compact Package · P.C.Board Mount Module · Low VCE(sat) Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tj=25°C current Tj=75°C 1ms Tj=25°C Tj=75°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *2 Rating 1400 ±20 75 50 150 100 50 100 360 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A Equivalent Circuit Schematic A A A W °C °C V N·m *1:All terminals should be connected together when isolation test will be done. *2: Recommendable value : 2.5 to 3.5 N·m (M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Diode forward on voltage Cies Coes Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time Characteristics Min. Typ. – – – – 5.5 7.2 – 2.4 – 3.0 – 6000 – 1250 – 1100 – 0.35 – 0.25 – 0.1 – 0.45 – 0.08 – 2.6 – 2.2 – – Max. 1.0 0.2 8.5 2.75 – – – – 1.2 0.6 – 1.0 0.3 3.4 – 0.35 Characteristics Min. Typ. Max. Conditions Unit VGE=0V, VCE=1400V VCE=0V, VGE=±20V VCE=20V, IC=50mA Tj=25°C VGE=15V, IC=50A Tj=125°C VGE=0V VCE=10V f=1MHz VCC =800V IC=50A VGE=±15V RG=24Ω mA µA V V Tj=25°C Tj=125°C IF=50A V IF=50A, VGE=0V pF µs µs Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 – – – – – 0.05 0.35 0.75 – Conditions Unit IGBT FWD the base to cooling fin °C/W °C/W °C/W *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6MBI50S-140 IGBT Module Characteristics [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 120 120 VGE= 20V15V12V VGE= 20V 15V 12V 100 Collector current : Ic [ A ] Collector current : Ic [ A ] 100 80 10V 60 40 80 10V 60 40 20 20 8V 8V 0 0 0 1 2 3 4 5 0 2 3 4 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 120 5 10 Tj= 25°C Tj= 125°C Collector - Emitter voltage : VCE [ V ] 100 Collector current : Ic [ A ] 1 Collector - Emitter voltage : VCE [ V ] 80 60 40 20 8 6 4 Ic= 100A Ic= 50A 2 Ic= 25A 0 0 0 1 2 3 4 5 5 Collector - Emitter voltage : VCE [ V ] 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=50A, Tj= 25°C [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 20000 1000 25 800 20 600 15 400 10 200 5 Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] 10000 Cies Coes 1000 Cres 100 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 100 200 300 Gate charge : Qg [ nC ] 400 0 500 6MBI50S-140 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 24ohm, Tj= 125°C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 24ohm, Tj= 25°C 1000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff 500 ton tr 100 500 ton tr 100 tf tf 50 50 0 20 40 60 80 0 20 40 60 80 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=50A, VGE=±15V, Tj= 25°C [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=24ohm 5000 20 Eon(125°C) 18 Switching loss : Eon, Eoff, Err [ mJ/pulse ] tr 1000 500 100 50 10 tf 16 Eon(25°C) 14 12 Eoff(125°C) 10 8 Eoff(25°C) 6 4 Err(125°C) 2 Err(25°C) 0 50 100 500 0 20 40 60 80 100 Collector current : Ic [ A ] Gate resistance : Rg [ohm] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=50A, VGE=±15V, Tj= 125°C 40 120 Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] ton toff 100 30 80 20 60 40 Eoff 10 20 Err 0 10 0 50 100 Gate resistance : Rg [ohm] 500 0 200 400 600 800 1000 1200 1400 1600 6MBI50S-140 IGBT Module Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=24ohm Forward current vs. Forward on voltage (typ.) 120 300 Tj=125°C Tj=25°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 100 80 60 40 20 0 trr(125°C) 100 trr(25°C) Irr(125°C) Irr(25°C) 10 0 1 2 3 4 0 20 Forward on voltage : VF [ V ] 40 60 80 Forward current : IF [ A ] Transient thermal resistance 3 Thermal resistanse : Rth(j-c) [ °C/W ] 1 FWD 0.1 0.01 0.001 0.01 0.1 M623 1 Pulse width : Pw [ sec ] Outline Drawings, mm 107.5±1 93±0.3 4-ø6.1±0.3 15.24 16.02 2-ø5.5±0.3 15.24 15.24 15.24 17 13 ø2.6±0.1 3 12 27.6±0.3 + 0.5 0 93±0.3 A 1.15±0.2 1±0.2 1.5±0.3 2.5±0.3 11.43 11.43 11.43 11.43 11.43 ø0.4 6.5±0.5 3.5±0.5 17±1 20.5±1 Section A-A 12 1 3.81 16.02 ø2.25±0.1 A 0.8±0.2 32±0.3 11 45±1 41.91 69.6±0.3 Shows theory dimensions