FUJI 3MBI150U-120

3MBI150U-120
IGBT Module U-Series
Features
1200V / 150A 3 in one-package
Applications
· High speed switching
· Voltage drive
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Low inductance module structure
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Conditions
Symbol
VCES
VGES
IC
Continuous Tc=25°C
Tc=80°C
1ms
Tc=25°C
Tc=80°C
ICp
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *2
-IC
-IC pulse
PC
Tj
Tstg
Viso
1 device
AC:1min.
Rating
1200
±20
200
150
400
300
150
300
735
+150
-40 to +125
2500
3.5
Unit
V
V
A
W
°C
VAC
N·m
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
t rr
R lead
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=150mA
VGE=15V, IC=150A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC =600V
IC=150A
VGE=±15V
RG=2.2 Ω
VGE=0V
IF=150A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
IF=150A
Characteristics
Min.
Typ.
–
–
–
–
4.5
6.5
–
2.15
–
2.40
–
1.75
–
2.00
–
17
–
0.36
–
0.21
–
0.03
–
0.37
–
0.07
–
2.00
–
2.10
–
1.60
–
1.70
–
–
–
2.4
Max.
1.0
200
8.5
2.50
–
2.10
–
–
1.20
0.60
–
1.00
0.30
2.30
–
1.90
–
0.35
–
Unit
Characteristics
Min.
Typ.
–
–
–
–
–
0.05
Max.
0.17
0.28
–
mA
nA
V
V
nF
µs
V
µs
mΩ
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance
Contact Thermal resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
Conditions
IGBT
FWD
With thermal compound
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Unit
°C/W
°C/W
°C/W
IGBT Module
3MBI150U-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Tj= 125°C / chip
400
400
15V
VGE=20V
12V
Collector current : Ic [A]
Collector current : Ic [A]
VGE=20V
300
300
200
10V
100
15V
12V
200
10V
100
8V
8V
0
0
0
1
2
3
4
0
5
Collector-Emitter voltage : VCE [V]
1
2
Collector current vs. Collector-Emitter voltage (typ.)
4
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
400
T j=25°C
Collector - Emitter voltage : VCE [ V ]
10
300
Collector current : Ic [A]
3
Collector-Emitter voltage : VCE [V]
T j=125°C
200
100
8
6
4
Ic=300A
Ic=150A
Ic= 75A
2
0
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
Vcc=600V, Ic=150A, Tj= 25°C
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE
[ 5V/div ]
Capacitance : Cies, Coes, Cres [ nF ]
100.0
Cies
10.0
Cres
1.0
Coes
VGE
VCE
0
0.1
0
10
20
Collector-Emitter voltage : VCE [V]
30
0
200
400
Gate charge : Qg [ nC ]
600
800
IGBT Module
3MBI150U-120
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 25°C
Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj=125°C
10000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
1000
ton
toff
tr
100
tf
1000
toff
ton
tr
100
tf
10
10
0
50
100
150
200
250
0
300
Collector current : Ic [ A ]
150
200
250
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C
Vcc=600V, VGE=±15V, Rg=2.2Ω
300
30
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
100
Collector current : Ic [ A ]
10000
ton
toff
1000
tr
100
tf
Eoff(125°C)
Eon(125°C)
25
20
Eoff(25°C)
Eon(25°C)
15
10
Err(125°C)
Err(25°C)
5
10
0
0.1
1.0
10.0
100.0
1000.0
0
100
200
300
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C
+VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <= 125°C
125
400
Eon
100
Collector current : Ic [ A ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
50
75
50
Eoff
25
300
200
100
Err
0
0
0.1
1.0
10.0
Gate resistance : Rg [ Ω ]
100.0
1000.0
0
400
800
1200
Collector - Emitter voltage : VCE [ V ]
3MBI150U-120
IGBT Module
Forward current vs. Forward on voltage (typ.)
Reverse recovery characteristics (typ.)
chip
Vcc=600V, VGE=±15V, Rg=2.2Ω
1000
400
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
350
Tj=25°C
300
250
200
Tj=125°C
150
100
trr (125°C)
Irr (125°C)
Irr (25°C)
trr (25°C)
100
50
10
0
0
1
2
3
4
Forward on voltage : VF [ V ]
Thermal resistanse : Rth(j-c) [ °C/W ]
1.000
FWD
IGBT
0.100
0.010
0.010
0.100
Pulse width : Pw [ sec ]
100
200
Forward current : IF [ A ]
Transient thermal resistance (max.)
0.001
0.001
0
1.000
300
IGBT Module
3MBI150U-120
Outline Drawings, mm
M634
(
) shows reference dimension.
Equivalent Circuit Schematic
16,17,18
1
2
7,8,9
13,14,15
3
4
10,11,12
5
6