7MBR25SA140 IGBT Modules IGBT MODULE (S series) 1400V / 25A / PIM Features Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage Continuous ICP 1ms Collector current Brake Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Condition VCES VGES IC Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque -IC PC VCES VGES IC Rating Tc=25°C Tc=75°C Tc=25°C Tc=75°C 1 device Continuous ICP 1ms PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1 device Tc=25°C Tc=75°C Tc=25°C Tc=75°C 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. 1400 ±20 35 25 70 50 25 180 1400 ±20 25 15 50 30 110 1400 1600 25 260 338 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A A A W V V A A W V V A A A 2s °C °C V N·m 7MBR25SA140 IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.2 2.3 2.7 3000 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr tr(i) toff tf VF Turn-off Brake Forward on voltage IF=25A 0.35 0.25 0.1 0.45 0.08 2.4 2.5 chip terminal Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current Forward on voltage ton tr toff tf IRRM VFM Reverse current Resistance IRRM R B value B IF=25A VCES=1400V, VGE=0V VCE=0V, VGE=±20V IC=15A, VGE=15V chip terminal V CC =800V IC=15A VGE=±15V RG=82 Ω V R=1400V IF=25A chip terminal VR=1600V T=25°C T=100°C T=25/50°C Symbol Condition Turn-off time Converter VCE=1400V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=25mA VGE=15V, Ic=25A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =800V IC=25A VGE=±15V RG=51Ω 2.2 2.3 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375 465 3305 1.2 0.6 mA µA V V pF µs 1.0 0.3 V 3.3 0.35 1.0 0.2 2.7 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 µs mA µA V µs mA V mA Ω K Thermal resistance Characteristics Item Min. Thermal resistance ( 1 device ) Contact thermal resistance Rth(j-c) * Rth(c-f) Characteristics Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound 0.69 1.30 1.14 0.90 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] [Inverter] 22(P1) 20(Gu) 1(R) 2(S) 3(T) 18(Gv) 19(Eu) 7(B) 14(Gb) 17(Ev) 4(U) 13(Gx) 16(Gw) 15(Ew) 5(V) 12(Gy) 6(W) 11(Gz) 10(En) 23(N) 24(N1) Unit °C/W 7MBR25SA140 IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 60 VGE= 20V15V 12V 50 Collector current : Ic [ A ] Collector current : Ic [ A ] 60 VGE= 20V 15V 12V 50 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 40 10V 30 20 10 40 10V 30 20 10 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 60 10 Tj= 25°C 5 Tj= 125°C Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 50 40 30 20 10 8 6 4 Ic= 50A Ic= 25A 2 Ic= 12.5A 0 0 0 1 2 3 4 5 5 10 Collector - Emitter voltage : VCE [ V ] 20 25 [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=25A, Tj= 25°C [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector - Emitter voltage : VCE [ V ] 10000 Capacitance : Cies, Coes, Cres [ pF ] 15 Gate - Emitter voltage : VGE [ V ] Cies 1000 Coes 1000 25 800 20 600 15 400 10 200 5 Cres 100 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 50 100 150 Gate charge : Qg [ nC ] 200 0 250 7MBR25SA140 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 51 ohm, Tj= 125°C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=51 ohm, Tj= 25°C 1000 1000 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff ton tr 100 500 ton tr 100 tf tf 50 50 0 10 20 30 40 0 10 20 30 40 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=25A, VGE=±15V, Tj= 25°C [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=51 ohm 5000 10 Eon(125°C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 500 toff ton 100 tr 8 Eon(25°C) 7 6 Eoff(125°C) 5 4 Eoff(25°C) 3 Err(125°C) 2 Err(25°C) 1 tf 50 10 0 50 100 500 0 10 20 Gate resistance : Rg [ohm] 30 40 50 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=25A, VGE=±15V, Tj= 125°C 20 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 9 60 Eon 50 15 40 10 30 20 5 Eoff 10 Err 0 10 0 50 100 Gate resistance : Rg [ohm] 500 0 200 400 600 800 1000 1200 1400 1600 IGBT Module 7MBR25SA140 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=51ohm [ Inverter ] Forward current vs. Forward on voltage (typ.) 60 300 Tj=125°C Tj=25°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 50 40 30 20 10 trr(125°C) 100 trr(25°C) Irr(125°C) Irr(25°C) 0 10 0 1 2 3 4 0 10 Forward on voltage : VF [ V ] 20 30 40 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 60 Tj= 25°C Forward current : IF [ A ] 50 Tj= 125°C 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Transient thermal resistance 200 5 Thermal resistanse : Rth(j-c) [ °C/W ] 100 FWD[Inverter] 1 IGBT[Brake] Conv. Diode IGBT[Inverter] 10 0.1 1 0.01 0.001 0.01 0.1 Pulse width : Pw [ sec ] 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 7MBR25SA140 IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 35 35 VGE= 20V15V 12V 30 25 Collector current : Ic [ A ] 25 Collector current : Ic [ A ] VGE= 20V15V 12V 30 10V 20 15 10 5 10V 20 15 10 5 8V 8V 0 0 0 1 2 3 4 5 0 2 3 4 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 35 Tj= 25°C Collector - Emitter voltage : VCE [ V ] Tj= 125°C 25 20 15 10 8 6 4 Ic= 30A Ic= 15A 2 Ic= 7.5A 5 0 0 0 1 2 3 4 5 5 Collector - Emitter voltage : VCE [ V ] 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=15A, Tj= 25°C [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] 5 10 30 Collector current : Ic [ A ] 1 Collector - Emitter voltage : VCE [ V ] Cies 1000 Coes 1000 25 800 20 600 15 400 10 200 5 100 Cres 50 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 50 100 Gate charge : Qg [ nC ] 0 150 IGBT Module Outline Drawings, mm mass : 180g 7MBR25SA140