FUJI FML16N60ES

http://www.fujisemi.com
FML16N60ES
FUJI POWER MOSFET
Super FAP-E3 series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TFP
7.0± 0.2
Equivalent circuit schematic
0.4± 0.1
4 D
9.0±0.2
0.5±0.2
1.5
(5.8)
G 1
Solder
Plating
(4.0)
(3.2)
(0.8)
(2.2)
1.0±0.2
3 S2
(2.1)
3
3.6±0.2
2.8±0.2
2
1
1.0±0.2
0.4±0.1
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
S1 2
(10.1)
2.0 2.5
2.0
Applications
10.1±0.3
0.5
0.1
9.0± 0.2
4
0.6±0.2
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
I DP
VGS
IAR
E AS
E AR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Drain-Source Voltage
Characteristics
600
600
±16
±64
±30
16
554.8
27
3.8
100
1.44
270
150
-55 to +150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
W
°C
°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BVDSS
VGS (th)
Zero Gate Voltage Drain Current
I DSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I GSS
R DS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
Q GS
Q SW
Q GD
IAV
VSD
trr
Qrr
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Drain-Source Crossover Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Conditions
I D =250µA, VGS=0V
I D =250µA, VDS=VGS
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
I D =8A, VGS=10V
I D =8A, VDS=25V
Tch=25°C
Tch=125°C
VDS=25V
VGS=0V
f=1MHz
Vcc =300V
VGS=10V
I D =8A
RG=18Ω
Vcc =300V
I D =16A
VGS=10V
L=1.74mH, Tch=25°C
I F=16A, VGS=0V, Tch=25°C
I F=16A, VGS=0V
-di/dt=100A/µs, Tch=25°C
min.
600
3.7
5
16
-
typ.
4.2
10
0.40
10
2100
230
13
43
41
94
20
56
20
21
9.5
0.90
0.7
9
max.
4.7
25
250
100
0.47
3150
345
19.5
64.5
61.5
141
30
114
25.5
33
14.5
1.08
-
Unit
V
V
min.
typ.
max.
0.46
87
52
Unit
°C/W
°C/W
°C/W
µA
nA
Ω
S
pF
ns
nC
A
V
µS
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Rth (ch-a)
Note *1 :Tch≤150°C
Note *2 :Stating Tch=25°C, IAS=5A, L=33.8mH, Vcc=50V, RG =10Ω,
E AS limited by maximum channel temperature and avalanche current.
Note *3 :Repetitive rating : Pulse width limited by maximum channel temperature.
Test Conditions
Channel to case
Channel to Ambient
Channel to Ambient Note*6
Note *4 :I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 :I F ≤-I D, dv/dt=6.3kV/µs, Vcc≤BVDSS, Tch≤150°C.
Note *6 :Surface mounted on 1000mm2, t=1.6mm FR-4 PCB (Drain pad area : 500mm2)
1
FML16N60ES
300
FUJI POWER MOSFET
http://www.fujisemi.com
Allowable Power Dissipation
PD=f(Tc)
2
10
Safe Operating Area
ID=f(VDS):Duty=0(Singlepulse), Tc=25˚c
t=
1 s
250
10µs
1
10
100µs
PD[W]
200
ID [A]
150
0
10
1ms
100
Power loss waveform :
Square waveform
-1
10
50
PD
t
0
-2
0
25
50
75
Tc [˚C]
100
125
10
150
1
2
10
3
10
10
VDS [V]
Typical Output Characteristics
ID=f(VDS):80µs pulse test, Tch=25˚C
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test, VDS=25V, Tch=25˚C
30
100
10V
8.0V
7.5V
25
10
ID [A]
20
ID [A]
0
10
7.0V
15
1
10
6.5V
5
VGS=6.0V
0.1
0
100
0
4
8
12
VDS [V]
16
20
24
0
2
4
6
VGS[V]
8
10
12
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test, Tch=25˚C
Typical Transconductance
gfs=f(ID):80µs pulse test, VDS=25V, Tch=25˚C
1.0
VGS=6.0V
6.5V
7V
0.9
8V 10V
20V
0.8
gfs [S]
RDS(on) [Ω]
10
0.7
0.6
1
0.5
0.4
0.3
0.1
0.1
1
10
0
100
5
10
15
ID [A]
ID [A]
2
20
25
30
FML16N60ES
FUJI POWER MOSFET
http://www.fujisemi.com
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6.5A,VGS=10V
2.0
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS, ID=250µA
8
1.8
7
1.6
6
5
1.2
max.
VGS(th) [V]
RDS(on) [Ω]
1.4
1.0
0.8
max.
0.6
typ.
4
typ.
3
min.
2
0.4
1
0.2
0
0.0
-50
-25
0
25
50
Tch [˚ C]
75
100
125
-50
150
-25
0
25
50
75
Tch [˚ C]
100
125
150
Typical Capacitance
C=f(VDS):VGS=0V, f=1MHz
Typical Gate Charge Characteristics
VGS=f(Qg):ID=13A, Tch=25˚C
14
12
4
10
Vcc= 120V
300V
480V
10
Ciss
3
8
C[pF]
VGS[V]
10
6
2
10
Coss
4
1
10
2
Crss
0
0
10
0
20
40
60
80
100
-2
10
-1
0
10
10
VDS [V]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test, Tch=25˚C
1
2
10
10
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=18Ω
3
100
10
10
10
td(off)
tf
td(on)
t [ns]
IF [A]
2
tr
1
10
1
0.1
0.00
0
10
0.25
0.50
0.75
VSD [V]
1.00
1.25
-1
1.50
10
3
0
1
10
10
ID [A]
2
10
FML16N60ES
FUJI POWER MOSFET
http://www.fujisemi.com
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V, I(AV)<=13A
700
600
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
1
10
IAS=6A
400
0
10
IAS=8A
Zth(ch-c) [˚C/W]
EAV[mJ]
500
300
IAS=13A
200
-1
10
-2
10
100
-3
0
10
0
25
50
75
100
125
-6
10
150
-5
10
-4
10
-3
10
t [sec]
starting Tch [˚C]
4
-2
10
-1
10
0
10
FML16N60ES
FUJI POWER MOSFET
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd.
is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
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he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
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