2MBI200UC-120 IGBT Modules IGBT MODULE (U series) 1200V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Conditions Ic Continuous Ic pulse 1ms -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*2) Tc=25°C Tc=80°C Tc=25°C Tc=80°C 1 device AC : 1min. Maximum ratings 1200 ±20 300 200 600 400 200 400 1040 150 -40 to +125 2500 3.5 4.5 Units V V A W °C °C VAC N·m Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VCE (sat) (teminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (teminal) VF (chip) trr R lead VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 200mA Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*3) Tj=25°C Tj=125°C Tj=25°C Tj=125°C = 0V, VCE = 10V, f = 1MHz VGE = 15V IC = 200A VGE VCC = 600V IC = 200A VGE = ±15V RG = 3Ω VGE = 0V IF = 200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C IF = 200A Characteristics min. typ. max. 2.0 400 4.5 6.5 8.5 1.85 2.20 2.10 1.75 2.10 2.00 22 0.36 1.20 0.21 0.60 0.03 0.37 1.00 0.07 0.30 1.70 2.00 1.80 1.60 1.90 1.70 0.35 0.53 - Units mA nA V V nF µs V µs mΩ Note *3: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact thermal resistance Rth(c-f) Conditions IGBT FWD with Thermal Compound (*4) Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 0.12 0.20 0.025 - Units °C/W 2MBI200UC-120 IGBT Modules Characteristics (Representative) VGE=20V Collector current : Ic [A] 400 15V 500 12V VGE=20V 15V 400 Collector current : Ic [A] 500 Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 300 10V 200 12V 300 10V 200 100 100 8V 8V 0 0 0 3 4 0 5 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 Tj=25°C Tj=125°C 300 200 100 0 8 6 4 Ic=400A Ic=200A Ic=100A 2 0 0 1 2 3 4 5 5 10 15 20 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Dynamic Gate charge (typ.) Vcc=600V, Ic=200A, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 100.0 Capacitance : Cies, Coes, Cres [ nF ] 1 Collector-Emitter voltage : VCE [V] 400 Collector current : Ic [A] 2 Collector - Emitter voltage : VCE [ V ] 500 1 Cies 10.0 Cres 1.0 Coes 0.1 0 10 20 30 VGE VCE 0 Collector-Emitter voltage : VCE [V] 300 600 900 Gate charge : Qg [ nC ] 2 25 1200 2MBI200UC-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj= 25°C 1000 ton toff tr 100 tf 0 200 300 tf 0 100 200 300 Collector current : Ic [ A ] Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω 40 1000 tr 100 tf 10 400 Eoff(125°C) Eon(125°C) 30 Eoff(25°C) 20 Eon(25°C) 10 Err(125°C) Err(25°C) 0 1.0 10.0 100.0 0 100 200 300 400 Gate resistance : Rg [ Ω ] Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 3Ω ,Tj <= 125°C 500 Eon Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff ton tr 100 400 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 100 ton toff 150 1000 10 10 10000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj=125°C 10000 Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time : ton, tr, toff, tf [ nsec ] IGBT Modules 100 50 Eoff 400 300 200 100 Err 0 1.0 10.0 0 100.0 0 Gate resistance : Rg [ Ω ] 400 800 1200 Collector - Emitter voltage : VCE [ V ] 3 2MBI200UC-120 Forward current vs. Forward on voltage (typ.) chip 500 Tj=25°C 400 Tj=125°C 300 200 100 Irr (125°C) Irr (25°C) trr (125°C) trr (25°C) 100 10 0 0 1 2 3 0 4 Forward on voltage : VF [ V ] Transient thermal resistance (max.) FWD IGBT 0.100 0.010 0.001 0.001 0.010 0.100 100 200 300 Forward current : IF [ A ] 1.000 Thermal resistanse : Rth(j-c) [ °C/W ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=3Ω 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] IGBT Modules 1.000 Pulse width : Pw [ sec ] 4 400 2MBI200UC-120 IGBT Modules 2MBI200UC-120 Outline Drawing ( Unit : mm ) Outline Drawings, 1.mm 2. Equivalent circuit Equivalent Circuit Schematic MS5F 5485 3 13 H04-004-03 5 2MBI200UC-120 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. A ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. A lthough Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. T he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. 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