FUJI 2MBI200UC-120

2MBI200UC-120
IGBT Modules
IGBT MODULE (U series)
1200V / 200A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbols
VCES
VGES
Conditions
Ic
Continuous
Ic pulse
1ms
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Mounting (*2)
Screw torque
Terminals (*2)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
1 device
AC : 1min.
Maximum ratings
1200
±20
300
200
600
400
200
400
1040
150
-40 to +125
2500
3.5
4.5
Units
V
V
A
W
°C
°C
VAC
N·m
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
ICES
IGES
VGE (th)
VCE (sat)
(teminal)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(teminal)
VF
(chip)
trr
R lead
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 200mA
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
= 0V, VCE = 10V, f = 1MHz
VGE = 15V
IC = 200A
VGE
VCC = 600V
IC = 200A
VGE = ±15V
RG = 3Ω
VGE = 0V
IF = 200A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
IF = 200A
Characteristics
min.
typ.
max.
2.0
400
4.5
6.5
8.5
1.85
2.20
2.10
1.75
2.10
2.00
22
0.36
1.20
0.21
0.60
0.03
0.37
1.00
0.07
0.30
1.70
2.00
1.80
1.60
1.90
1.70
0.35
0.53
-
Units
mA
nA
V
V
nF
µs
V
µs
mΩ
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Symbols
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
Characteristics
min.
typ.
max.
0.12
0.20
0.025
-
Units
°C/W
2MBI200UC-120
IGBT Modules
Characteristics (Representative)
VGE=20V
Collector current : Ic [A]
400
15V
500
12V
VGE=20V 15V
400
Collector current : Ic [A]
500
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
300
10V
200
12V
300
10V
200
100
100
8V
8V
0
0
0
3
4
0
5
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
Tj=25°C Tj=125°C
300
200
100
0
8
6
4
Ic=400A
Ic=200A
Ic=100A
2
0
0
1
2
3
4
5
5
10
15
20
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Dynamic Gate charge (typ.)
Vcc=600V, Ic=200A, Tj= 25°C
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE
[ 5V/div ]
100.0
Capacitance : Cies, Coes, Cres [ nF ]
1
Collector-Emitter voltage : VCE [V]
400
Collector current : Ic [A]
2
Collector - Emitter voltage : VCE [ V ]
500
1
Cies
10.0
Cres
1.0
Coes
0.1
0
10
20
30
VGE
VCE
0
Collector-Emitter voltage : VCE [V]
300
600
900
Gate charge : Qg [ nC ]
2
25
1200
2MBI200UC-120
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=3Ω, Tj= 25°C
1000
ton
toff
tr
100
tf
0
200
300
tf
0
100
200
300
Collector current : Ic [ A ]
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=3Ω
40
1000
tr
100
tf
10
400
Eoff(125°C)
Eon(125°C)
30
Eoff(25°C)
20
Eon(25°C)
10
Err(125°C)
Err(25°C)
0
1.0
10.0
100.0
0
100
200
300
400
Gate resistance : Rg [ Ω ]
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 3Ω ,Tj <= 125°C
500
Eon
Collector current : Ic [ A ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
toff
ton
tr
100
400
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
100
ton
toff
150
1000
10
10
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=3Ω, Tj=125°C
10000
Switching time : ton, tr, toff, tf [ nsec ]
10000
Switching time : ton, tr, toff, tf [ nsec ]
IGBT Modules
100
50
Eoff
400
300
200
100
Err
0
1.0
10.0
0
100.0
0
Gate resistance : Rg [ Ω ]
400
800
1200
Collector - Emitter voltage : VCE [ V ]
3
2MBI200UC-120
Forward current vs. Forward on voltage (typ.)
chip
500
Tj=25°C
400
Tj=125°C
300
200
100
Irr (125°C)
Irr (25°C)
trr (125°C)
trr (25°C)
100
10
0
0
1
2
3
0
4
Forward on voltage : VF [ V ]
Transient thermal resistance (max.)
FWD
IGBT
0.100
0.010
0.001
0.001
0.010
0.100
100
200
300
Forward current : IF [ A ]
1.000
Thermal resistanse : Rth(j-c) [ °C/W ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=3Ω
1000
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
IGBT Modules
1.000
Pulse width : Pw [ sec ]
4
400
2MBI200UC-120
IGBT Modules
2MBI200UC-120
Outline Drawing ( Unit : mm )
Outline Drawings, 1.mm
2. Equivalent circuit
Equivalent Circuit Schematic
MS5F 5485
3
13
H04-004-03
5
2MBI200UC-120
IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. A lthough Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. T
he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment
• Electrical home appliances
• Personal equipment
• Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
6