http://www.fujisemi.com 6MBI300V-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 300A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Junction temperature Operation temperature Storage temperature Conditions VCES VGES Ic Icp -Ic -Ic pulse Pc Tj Top Tstg Isolation voltage between terminal and copper base (*1) Viso between thermistor and others (*2) Screw torque Mounting (*3) Terminals (*4) Continuous 1ms 1ms 1 device AC : 1min. - Tc=80°C Tc=80°C Maximum ratings 1200 ±20 300 600 300 600 1600 175 150 -40 to +125 V V A W °C 2500 VAC 3.5 4.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6) 1 Units 6MBI300V-120-50 IGBT Modules http://www.fujisemi.com Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions ICES IGES VGE (th) VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, IC = 300mA VCE (sat) (terminal) Collector-Emitter saturation voltage Inverter VCE (sat) (chip) Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C IC = 300A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VGE = 15V IC = 300A VCC = 600V IC = 300A VGE = +15V RG = 0.93Ω VF (terminal) VGE = 0V IF = 300A VF (chip) VGE = 0V IF = 300A Reverse recovery time trr Resistance R B value B IF = 300A T = 25°C T = 100°C T = 25 / 50°C Items Symbols Conditions Thermal resistance (1device)(*5) Rth(j-c) Contact thermal resistance (1device) (*6) Rth(c-f) Thermistor Forward on voltage Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.20 2.65 2.50 2.55 1.75 2.20 2.05 2.10 27 550 1200 180 600 120 1050 2000 110 350 2.15 2.60 2.30 2.25 1.70 2.15 1.85 1.80 200 600 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs V µs Ω K Thermal resistance characteristics Inverter IGBT Inverter FWD with Thermal Compound Characteristics min. typ. max. 0.094 0.150 0.0167 - Note *5: This value is including margins. This will be revised in future. Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic [ Inverter ] 2 [ Thermistor ] Units °C/W 6MBI300V-120-50 IGBT Modules http://www.fujisemi.com Characteristics (Representative) [INVERTER] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 700 700 15V 15V 600 12V 500 Vge=20V 400 300 10V 200 100 Vge= 20V Collector current: Ic [A] Collector current: Ic [A] 600 400 300 10V 200 100 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage: Vce [V] 1 2 3 4 [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Vge= 15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 700 10 Collector-Emitter Voltage: Vce [V] 125°C 600 500 Tj=25°C 400 150°C 300 200 100 0 8 6 4 Ic=600A Ic=300A Ic=150A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter Voltage: Vce [V] 15 20 [INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) Vge= 0V, ƒ= 1MHz, Tj= 25°C Dynamic Gate Charge (typ.) Vcc=600V, Ic=300A, Tj= 25°C Collector-Emitter voltage: Vce [200V/div] Gate-Emitter voltage: Vge [5V/div] 100 Cies 10 Coes Cres 1 0 10 20 25 Gate-Emitter Voltage: Vge [V] [INVERTER] Gate Capacitance: Cies, Coes, Cres [nF] *** 5 Collector-Emitter voltage: Vce [V] [INVERTER] Collector Current: Ic [A] 12V 500 30 Vge 0 Collector-Emitter voltage: Vce [V] Vce 500 1000 1500 2000 2500 3000 3500 Gate charge: Qg [nC] 3 6MBI300V-120-50 IGBT Modules http://www.fujisemi.com [INVERTER] [INVERTER] Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=25°C Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 toff 1000 ton tr 100 tf 10 0 100 200 300 400 500 600 Tj=125oC Tj=150oC toff 1000 ton tr tf 100 10 0 700 100 300 400 500 600 700 Collector current: Ic [A] Collector current: Ic [A] [INVERTER] [INVERTER] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, Ic=300A, Vge=±15V, Tj=25°C Vcc=600, Vge=±15V, Rg=0.93Ω, Tj=125°C, 150°C Switching loss: Eon, Eoff, Err [mJ/pulse] 10000 Switching time: ton, tr, toff, tf [nsec] 200 toff ton tr 1000 tf 100 10 0.1 1 10 100 Tj=125oC Tj=150oC 80 Eoff 60 40 Err 20 Eon 0 0 100 100 200 300 400 500 600 700 Collector current: Ic [A] Gate resistance: Rg [Ω] [INVERTER] Reverse bias safe operating area (max.) Vcc=600V, Ic=300A, Vge=±15V, Tj=125°C, 150°C +Vge=15V, -Vge≤15V, Rg≥0.93Ω, Tj=150°C 150 800 Tj=125oC Tj=150oC Eon Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] [INVERTER] Switching loss vs. Gate resistance (typ.) 100 Eoff 50 600 400 200 Err 0 0 0 1 10 100 0 Gate resistance: Rg [Ω] 500 1000 Collector-Emitter voltage: Vce [V] 4 1500 6MBI300V-120-50 IGBT Modules http://www.fujisemi.com [INVERTER] [INVERTER] Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=25°C 10000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 700 Forward current: If [A] 600 Tj=25°C 500 400 300 125°C 200 100 150°C 0 1000 Irr trr 100 10 0 1 2 3 0 Forward on voltage: Vf [V] 100 200 300 400 500 600 700 Forward current: If [A] [INVERTER] Reverse Recovery Characteristics (typ.) Transient Thermal Resistance (max.) Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=125°C, 150°C 1 Thermal resistanse: Rth(j-c) [°C/W] *** Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 10000 Tj=125oC Tj=150oC 1000 Irr trr 100 10 0 Forward current: If [A] Temperature characteristic (typ.) Resistance : R [kΩ] 100 10 1 0.1 20 40 60 IGBT 0.01 0.01 0.1 Pulse Width : Pw [sec] [THERMISTOR] 0 0.1 0.001 0.001 100 200 300 400 500 600 700 -60 -40 -20 FWD 80 100 120 140 160 Temperature [°C] 5 1 6MBI300V-120-50 IGBT Modules http://www.fujisemi.com Outline Drawings, mm WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. A ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. 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T he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. 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