http://www.fujisemi.com 2MBI450VJ-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 450A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Symbols VCES VGES Ic Ic pulse Collector current -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals (*4) PC-Board (*5) Conditions Inverter Items Collector-Emitter voltage Gate-Emitter voltage Continuous 1ms Tc=80°C Tc=80°C 1ms 1 device AC : 1min. Maximum ratings 1200 ±20 450 900 450 900 2270 175 150 125 -40 to +125 Units V V 2500 VAC 3.5 4.5 0.6 Nm A W °C Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6) Note *5: Recommendable value : 0.4-0.6 Nm (M2.5) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions ICES IGES VGE (th) VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 450mA VCE (sat) (terminal) Collector-Emitter saturation voltage Inverter VCE (sat) (chip) Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Forward on voltage Thermistor VF (chip) VGE = 15V IC = 450A Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 450A VGE = ±15V RG = 0.52Ω VGE = 0V IF = 450A Reverse recovery time trr Resistance R B value B IF = 450A T=25°C T=100°C T=25/50°C Symbols Conditions Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.25 2.70 2.55 2.60 1.75 2.20 2.05 2.10 41 550 1200 180 600 120 1050 2000 110 350 2.20 2.65 2.35 2.30 1.70 2.15 1.85 1.80 200 600 5000 465 495 520 3305 3375 3450 Units mA nA V V nF nsec V nsec Ω K Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*6) Rth(c-f) Inverter IGBT Inverter FWD with Thermal Compound Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 0.066 0.100 0.0167 - Units °C/W 2MBI450VJ-120-50 IGBT Modules http://www.fujisemi.com Characteristics (Representative) [INVERTER] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 1000 1000 VGE=20V15V VGE= 20V 15V 12V Collector current: Ic [A] Collector current: Ic [A] 12V 800 800 600 10V 400 600 10V 400 200 200 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage: VCE [V] 1 2 3 4 5 Collector-Emitter voltage: VCE [V] [INVERTER] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 10 1000 150°C 800 Collector Current: Ic [A] Collector-Emitter Voltage: VCE [V] Tj=25°C 125°C 600 400 200 8 6 4 Ic=900A Ic=450A Ic=225A 2 0 0 0 1 2 3 4 5 5 10 15 20 Gate-Emitter Voltage: VGE [V] Collector-Emitter Voltage: VCE [V] [INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C Dynamic Gate Charge (typ.) Vcc=600V, Ic=450A, Tj= 25°C 1000 Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] Gate Capacitance: Cies, Coes, Cres [nF] *** [INVERTER] 100 Cies 10 Cres Coes 1 0 10 20 25 30 VCE 0 Collector-Emitter voltage: VCE [V] 1000 VGE 2000 3000 4000 Gate charge: Qg [nC] 2 5000 6000 2MBI450VJ-120-50 IGBT Modules http://www.fujisemi.com [INVERTER] [INVERTER] Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=25°C Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 toff 1000 ton tr 100 tf 10 0 200 400 600 800 Tj=125oC Tj=150oC toff 1000 ton tr tf 100 10 1000 0 200 Collector current: Ic [A] 800 1000 [INVERTER] [INVERTER] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C, 150°C Vcc=600, VGE=±15V, Rg=0.52Ω, Tj=125°C, 150°C o Switching loss: Eon, Eoff, Err [mJ/pulse] Switching time: ton, tr, toff, tf [nsec] 600 Collector current: Ic [A] 10000 toff Tj=125 C Tj=150oC ton tr 1000 tf 100 10 0.1 1 10 150 Tj=125oC Tj=150oC Eoff 100 Err 50 Eon 0 0 100 200 Gate resistance: Rg [Ω] 400 600 800 1000 Collector current: Ic [A] [INVERTER] [INVERTER] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=600V, Ic=450A, VGE=±15V, Tj=125°C, 150°C +VGE=15V, -VGE=15V, Rg=0.52Ω, Tj=150°C 1400 250 Tj=125oC Tj=150oC 200 Eon 1200 Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] 400 150 100 Eoff 50 1000 800 600 400 200 Err 0 0 0 1 10 0 100 500 1000 Collector-Emitter voltage: VCE [V] Gate resistance: Rg [Ω] 3 1500 2MBI450VJ-120-50 IGBT Modules http://www.fujisemi.com [INVERTER] [INVERTER] Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=25°C 1000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 10000 Forward current: IF [A] 800 Tj=25°C 600 400 125°C 200 150°C 0 1000 Irr trr 100 10 0 1 2 3 0 Forward on voltage: VF [V] 200 400 600 800 1000 Forward current: IF [A] [INVERTER] Reverse Recovery Characteristics (typ.) Transient Thermal Resistance (max.) Vcc=600V, VGE=±15V, Rg=0.52Ω, Tj=125°C, 150°C Thermal resistanse: Rth(j-c) [°C/W] *** Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 10000 Tj=125oC Tj=150oC 1000 Irr trr 100 10 0 200 400 600 800 Temperature characteristic (typ.) Resistance : R [kΩ] 100 10 1 0.1 20 40 60 IGBT 0.01 0.01 0.1 Pulse Width : Pw [sec] [THERMISTOR] 0 FWD 0.1 0.001 0.001 1000 Forward current: IF [A] -60 -40 -20 1 80 100 120 140 160 Temperature [°C] 4 1 2MBI450VJ-120-50 IGBT Modules http://www.fujisemi.com Outline Drawings, mm Equivalent Circuit Schematic [ Inverter ] [ Thermistor ] + CX1 T1 T2 G1.1 G1.2 G1.3 EX1.1 EX1.2 EX1.3 G2.1 G2.2 G2.3 EX2.1 EX2.2 EX2.3 GND Cu-Base 5 2MBI450VJ-120-50 IGBT Modules http://www.fujisemi.com WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. A ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. 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