FUJI TP869C10R

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TP869C10R
FUJI Diode
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Repetitive peak reverse voltage
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Conditions
Ratings
Units
VRRM
-
100
V
Io
50Hz square wave duty =1/2
Tc =105˚C
40*
A
Sine wave, 10ms 1shot
IFSM
190
A
Tj
-
150
˚C
Tstg
-
-40 to +150
˚C
Conditions
Maximum
Units
0.82
V
Note* Out put current of center tap full wave connection.
Note**Rating per element
Electrical characteristics
Item
Forward voltage***
(at Ta=25˚C unless otherwise specified.)
Symbols
VF
IF = 20 A
Reverse current***
IR
VR =VRRM
200
µA
Thermal resistance
Rth(j-c)
Junction to case
1.00
˚C/W
Conditions
Maximum
Units
-
1.6
g
Note*** Rating per element
Mechanical characteristics
Item
Approximate mass
1
TP869C10R
FUJI Diode
http://www.fujisemi.com
Outline Drawings [mm]
2
TP869C10R
FUJI Diode
http://www.fujisemi.com
Forward Characteristic
(typ.)
Reverse Characteristic
(typ.)
105
Tj=150℃
10
10
(A)
Tj=125℃
(uA)
Tj=150℃
Tj=125℃
1
Reverse Current
Tj=100℃
Forward Current
4
IR
IF
Tj=25℃
Tj=100℃
103
102
101
Tj= 25℃
0.1
100
0.01
0.0
10-1
0.1
0.2
0.3
VF
0.4
0.5
Forward Voltage
0.6
0.7
0.8
0
0.9
10
20
30
40
VR
(V)
Forward Power Dissipation (max.)
50
60
70
Reverse Voltage
80
90
100
110
(V)
Reverse Power Dissipation (max.)
26
9
360°
24
DC
360°
8
22
VR
I0
λ
(W)
(W)
20
18
α
7
Power Dissipation
Sine wave λ=180°
Square wave λ=180°
12
DC
10
8
6
5
α=180°
4
Reverse
Square wave λ=120°
14
3
PR
WF
Forward Power Dissipation
6
Square wave λ=60°
16
2
4
1
2
Per 1element
0
0
0
2
4
Io
6
8
10
12
14
Average Output Current
16
18
20
22
0
(A)
20
40
VR
3
60
Reverse Voltage
80
100
(V)
120
TP869C10R
FUJI Diode
http://www.fujisemi.com
Current Derating
(Io-Tc) (max.)
Junction Capacitance Characteristic (max.)
160
150
1000
140
DC
110
Sine wave λ=180°
Square wave λ=180°
100
Square wave λ=120°
Junction Capacitance (pF)
120
100
Cj
Case Temperature
(℃)
130
Tc
90
Square wave λ=60°
360°
80
I0
70
VR=50V
λ
60
0
5
10
Io
15
20
25
30
35
40
Average Output Current
45
50
10
55
1
(A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability (max.)
IFSM Peak Half - Wave Current
(A)
1000
100
10
1
10
100
Number of Cycles at 50Hz
4
10
100
VR
Reverse Voltage (V)
1000
TP869C10R
FUJI Diode
http://www.fujisemi.com
Transient Thermal Impedance (max.)
1
(°C/W)
10
Rth(j-c):1.0°C/W
0
Transient Thermal Impedance
10
-1
10
-2
10
-3
10
-2
10
-1
0
10
10
t
5
Time
(sec)
1
10
2
10
TP869C10R
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
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is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or
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may arise from the use of the applications described herein.
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become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. T
he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
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6