FUJI TP869C08R

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TP869C08R
FUJI Diode
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Repetitive peak reverse voltage
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
Conditions
Ratings
Units
VRRM
-
80
V
Io
50Hz square wave duty =1/2
Tc =98˚C
40*
A
Sine wave, 10ms 1shot
IFSM
190
A
Tj
-
150
˚C
Tstg
-
-40 to +150
˚C
Conditions
Maximum
Units
0.71
V
Note* Out put current of center tap full wave connection.
Note**Rating per element
Electrical characteristics
Item
Forward voltage***
(at Ta=25˚C unless otherwise specified.)
Symbols
VF
IF = 20 A
Reverse current***
IR
VR =VRRM
200
µA
Thermal resistance
Rth(j-c)
Junction to case
1.00
˚C/W
Conditions
Maximum
Units
-
1.6
g
Note*** Rating per element
Mechanical characteristics
Item
Approximate mass
1
TP869C08R
FUJI Diode
http://www.fujisemi.com
Outline Drawings [mm]
2
TP869C08R
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
Forward Characteristic (typ.)
6
10
Tj=150°C
5
10
10
Tj=125°C
4
10
Tj=150°C
Tj=100°C
Tj=125°C
IR Reverse Current (uA)
IF Forward Current (A)
Tj=100°C
Tj=25°C
1
3
10
2
10
Tj= 25°C
1
10
0.1
0
10
-1
10
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
20
0.8
30
40
50
60
70
80
90
VR Reverse Voltage (V)
VF Forward Voltage (V)
Forward Power Dissipation (max.)
Reverse Power Dissipation (max.)
26
6
DC
360°
24
22
360°
λ
20
α
(W)
(W)
18
4
Square wave λ=60°
16
PR Reverse Power Dissipation
WF Forward Power Dissipation
VR
5
I0
Square wave λ=120°
Sine wave λ=180°
14
Square wave λ=180°
12
DC
10
8
3
α=180°C
2
6
1
4
2
Per 1 element
0
0
0
2
4
6
8
10
12
14
Io Average Output Current
16
18
20
0
22
(A)
20
40
60
VR Reverse Voltage
3
80
(V)
100
TP869C08R
FUJI Diode
http://www.fujisemi.com
Current Derating (Io-Tc) (max.)
Junction Capacitance Characteristic (max.)
160
150
140
1000
130
(°C)
Tc Case Temperature
110
Sine wave λ=180°
100
Square wave λ=180°
90
Square wave λ=120°
80
Cj Junction Capacitance (pF)
DC
120
100
Square wave λ=60°
70
360°
60
I0
50
VR=40V
λ
40
0
5
10
15
20
25
30
35
Io Average Output Current
40
45
50
55
10
1
(A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability (max.)
IFSM Peak Half - Wave Current
(A)
1000
100
10
1
10
10
100
VR Reverse Voltage (V)
100
Number of Cycles at 50Hz
4
1000
TP869C08R
FUJI Diode
http://www.fujisemi.com
Surge Current Ratings (max.)
IFSM Peak HAlf-Wave Current (A)
1000
100
1
10
100
1000
t Time (ms) Sinewave
Transient Thermal Impedance (max.)
1
Transient Thermal Impedance
(°C/W)
10
Rth(j-c):1.0°C/W
0
10
-1
10
-2
10
-3
10
-2
10
-1
0
10
10
t
Time
5
(sec)
1
10
2
10
TP869C08R
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
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may arise from the use of the applications described herein.
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become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
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he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
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6