FUJI MS868C15

http://www.fujisemi.com
MS868C15
FUJI Diode
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Repetitive peak surge reverse voltage
VRSM
Repetitive peak reverse voltage
VRRM
Average output current
Io
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
IFSM
Conditions
Ratings
Units
150
V
150
V
Square wave duty =1/2
Tc = 113˚C
30*
A
Sine wave, 10ms
190
A
tw=500ns, duty=1/40
-
Tj
-
150
˚C
Tstg
-
-40 to +150
˚C
Conditions
Maximum
Units
Note* Out put current of center tap full wave connection.
Note**Rating per element
Electrical characteristics
Item
(at Ta=25˚C unless otherwise specified.)
Symbols
Forward voltage***
VF
IF = 15 A
0.90
V
Reverse current***
IR
VR =150V
200
µA
Thermal resistance
Rth(j-c)
Junction to case
1.2
˚C/W
Conditions
Maximum
Units
-
0.8
g
Note*** Rating per element
Mechanical characteristics
Item
Approximate mass
1
MS868C15
FUJI Diode
http://www.fujisemi.com
Outline Drawings [mm]
2
MS868C15
FUJI Diode
http://www.fujisemi.com
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
Tj=150°C
Tj=125°C
101
10
Tj=100°C
100
Tj=125°C
Tj=100°C
IR Reverse Current (mA)
IF Forward Current (A)
Tj=150°C
Tj=25°C
1
10-1
Tj=25°C
10-2
0.1
10-3
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140 150 160
VR Reverse Voltage (V)
VF Forward Voltage (V)
Reverse Power Dissipation (max.)
Forward Power Dissipation (max.)
12
22
360°
360°
DC
20
I0
α
(W)
18
16
Reverse Power Dissipation
Square wave λ=60°
14
Square wave λ=120°
Sine wave λ=180°
12
Square wave λ=180°
DC
10
8
8
6
α =180°
4
PR
WF
Forward Power Dissipation (W)
VR
10
λ
6
4
2
2
Per 1element
0
0
2
4
Io
6
8
10
12
Average Output Current
14
16
0
18
0
(A)
20
40
60
VR
3
80
100
Reverse Voltage
120
(V)
140
160
MS868C15
FUJI Diode
http://www.fujisemi.com
Current Derating (Io-Tc) (max.)
Junction Capacitance Characteristic (max.)
1000
150
DC
120
Sine wave λ=180°
Square wave λ=180°
Square wave λ=120°
100
360°
Square wave λ=60°
I0
90
VR=75V
λ
0
5
10
Io
15
20
25
30
Average Output Current
35
40
10
45
1
(A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability (max.)
1000
100
IFSM
Peak Half - Wave Current (A)
100
Cj
110
Junction Capacitance (pF)
130
Tc
Case Temperature
(°C)
140
10
1
10
100
Number of Cycles at 50Hz
4
10
100
VR
Reverse Voltage (V)
1000
MS868C15
FUJI Diode
http://www.fujisemi.com
Surge Current Ratings (max.)
IFSM Peak Half-Wave Current (A)
1000
100
10
10
100
1000
t Time (ms) Sinewave
Transient Thermal Impedance
(°C/W)
Transient Thermal Impedance (max.)
10
1
10
0
Rth(j-c):1.2°C/W
10
-1
10
-2
10
-3
10
-2
10
-1
10
t
Time
5
(sec)
0
10
1
10
2
MS868C15
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
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may arise from the use of the applications described herein.
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become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
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he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
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6