HMC1029 v01.0412 Amplifiers - Linear & Power - Chip GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER 29 - 37 GHz Typical Applications Features The HMC1029 is ideal for: Saturated Output Power: +35 dBm @ 25% PAE • Point-to-Point Radios High Output IP3: +42 dBm • Point-to-Multi-Point Radios High Gain: 24 dB • VSAT & SATCOM DC Supply: +6V @ 1400 mA • Military & Space No External Matching Required Die Size: 2.79 x 2.37 x 0.1 mm Functional Diagram [3] General Description The HMC1029 is a four stage GaAs pHEMT MMIC 2 Watt Power Amplifier which operates between 29 and 37 GHz. The HMC1029 provides 24 dB of gain, +35 dBm of saturated output power, and 25% PAE from a +6V power supply. The HMC1029 exhibits excellent linearity and is optimized for high capacity point-to-point and point-to-multi-point radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. Electrical Specifications, TA = +25° C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 mA [1] Parameter Min. Frequency Range Gain Typ. Max. Min. 29 - 34 21 Gain Variation Over Temperature 24 Typ. 34 - 37 19.5 0.025 Max. Units GHz 22.5 dB 0.03 dB/ °C Input Return Loss 20 18 dB Output Return Loss 14 20 dB 30.5 dBm Saturated Output Power (Psat) Output Power for 1 dB Compression (P1dB) 35 34 dBm Output Third Order Intercept (IP3)[2] 42 40 dBm 1400 1400 mA Total Supply Current (Idd) 27 31 27 [1] Adjust Vgg between -2 to 0V to achieve Idd = 1400 mA typical. [2] Measurement taken at +6V @ 1400 mA, Pout / Tone = +24 dBm [3] Vgg1 and Vgg2 connected internally, amplifier can be biased by either Vgg1 or Vgg2 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1029 v01.0412 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER 29 - 37 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 28 26 S21 S11 S22 10 GAIN (dB) RESPONSE (dB) 20 0 -10 24 22 20 -20 +25 C +85 C -55 C 18 16 -30 25 27 29 31 33 35 37 28 39 30 Input Return Loss vs. Temperature 36 38 0 +25 C +85 C -55 C -10 -10 RESPONSE (dB) RETURN LOSS (dB) 34 Output Return Loss vs. Temperature 0 -20 -30 -20 +25 C +85 C -55 C -30 -40 -40 28 30 32 34 36 38 28 30 FREQUENCY (GHz) 34 36 38 36 38 P1dB vs. Supply Voltage 34 32 32 P1dB (dBm) 34 30 +25C +85C -55C 28 32 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 32 FREQUENCY (GHz) FREQUENCY (GHz) Amplifiers - Linear & Power - Chip 30 30 26 30 5V 5.5V 6V 28 26 24 24 28 30 32 34 FREQUENCY (GHz) 36 38 28 30 32 34 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1029 v01.0412 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER 29 - 37 GHz 37 35 35 Psat (dBm) Psat (dBm) Psat vs. Supply Voltage 37 33 31 +25 C +85 C -55 C 29 31 5V 5.5V 6V 27 28 30 32 34 36 38 28 30 FREQUENCY (GHz) 32 34 P1dB vs. Supply Current (Idd) 32 35 Psat (dBm) 37 30 28 33 31 1200 mA 1200 mA 1400 mA 1400 mA 29 24 27 28 30 32 34 36 38 28 30 FREQUENCY (GHz) 34 36 38 Output IP3 vs. Supply Current, Pout/Tone = +24 dBm 46 46 41 41 36 +25 C +85 C -55 C 31 32 FREQUENCY (GHz) IP3 (dBm) IP3 (dBm) 38 Psat vs. Supply Current (Idd) 34 26 36 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +24 dBm 36 1200 mA 31 26 1400 mA 26 28 30 32 34 FREQUENCY (GHz) 3 33 29 27 P1dB (dBm) Amplifiers - Linear & Power - Chip Psat vs. Temperature 36 38 28 30 32 34 36 38 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1029 v01.0412 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER 29 - 37 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +24 dBm Output IM3 @ Vdd = +5V 70 60 50 IM3 (dBc) IP3 (dBm) 41 5V 5.5V 6V 36 40 30 30 GHz 31 GHz 32 GHz 34 GHz 35 GHz 36 GHz 20 31 10 26 0 28 29 30 31 32 33 34 35 36 37 38 10 12 14 16 FREQUENCY (GHz) 70 60 60 50 50 40 30 GHz 31 GHz 32 GHz 34 GHz 35 GHz 36 GHz 20 10 22 24 20 22 24 40 30 30 GHz 31 GHz 32 GHz 34 GHz 35 GHz 36 GHz 20 10 0 0 10 12 14 16 18 20 22 24 10 12 14 16 Pout/TONE (dBm) 18 Pout/TONE (dBm) Power Compression @ 30 GHz Power Compression @ 33 GHz 40 35 Pout (dBm), Gain (dB), PAE (%) 40 Pout (dBm), Gain (dB), PAE (%) 20 Output IM3 @ Vdd = +6V 70 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd = +5.5V 30 18 Pout/TONE (dBm) Amplifiers - Linear & Power - Chip 46 Pout Gain PAE 30 25 20 15 10 5 0 35 Pout Gain PAE 30 25 20 15 10 5 0 -9 -6 -3 0 3 6 INPUT POWER (dBm) 9 12 15 -9 -6 -3 0 3 6 9 12 15 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1029 v01.0412 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER 29 - 37 GHz Power Compression @ 36 GHz Reverse Isolation vs. Temperature 0 -10 Pout Gain PAE 30 +25C +85C -55C -20 ISOLATION (dB) Pout (dBm), Gain (dB), PAE (%) 35 25 20 15 -30 -40 -50 10 -60 5 -70 0 -10 -8 -80 -6 -4 -2 0 2 4 6 8 10 12 14 28 16 30 32 Gain & Power vs. Supply Current @ 33 GHz 36 38 Gain & Power vs. Supply Voltage @ 33 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) 40 35 30 25 GAIN(dB) P1dB(dBm) Psat(dBm) 20 15 1200 34 FREQUENCY (GHz) INPUT POWER (dBm) Gain (dB), P1dB (dBm), Psat (dBm) Amplifiers - Linear & Power - Chip 40 35 30 25 GAIN (dB) P1dB (dBm) Psat (dBm) 20 15 1250 1300 1350 1400 5 Idd (mA) 5.2 5.5 5.7 6 Vdd (V) Power Dissipation POWER DISSIPATION (W) 12 10 8 6 30 GHz 31 GHz 32 GHz 34 GHz 35 GHz 36 GHz 4 2 0 -7 -3 1 5 9 13 17 INPUT POWER (dBm) 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1029 v01.0412 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER 29 - 37 GHz Drain Bias Voltage (Vdd) +7V RF Input Power (RFIN) +20 dBm Channel Temperature 150 °C Vdd (V) Idd (mA) +5.0 1400 +6.0 1400 Note: Amplifier will operate over full voltage ranges shown above, Vgg adjusted to achieve Idd = 1400 mA at +6V Continuous Pdiss (T= 85 °C) (derate 135 mW/°C above 85 °C) 8.8 W Thermal Resistance (channel to die bottom) 7.39 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Amplifiers - Linear & Power - Chip Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± .002 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC1029 v01.0412 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER 29 - 37 GHz Amplifiers - Linear & Power - Chip Pin Descriptions 7 Pad Number Function Description 1 RFIN RF signal input. This pin is AC coupled and matched to 50 Ohms over the operating frequency range. 2, 12 Vgg1, Vgg2 Gate control for amplifier. Amplifier can be biased by either Vgg1 or Vgg2. External bypass capacitors of 100pF, 0.01uF, and 4.7uF are required. 3, 4, 5, 6 Vdd1-4 Drain bias voltage for the top half of the amplifier. External bypass capacitors of 100pF required for each pin, followed by common 0.01uF and 4.7uF Capacitors. 7 RFOUT RF signal output. This pad is AC coupled and matched to 50 Ohms over the operating frequency range. 8, 9, 10, 11 Vdd5-8 Drain bias voltage for the bottom half of the amplifier. External bypass capacitors of 100 pF required for each pin followed by common 0.01uF and 4.7uF capacitors. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1029 v01.0412 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER 29 - 37 GHz Amplifiers - Linear & Power - Chip Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC1029 v01.0412 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER 29 - 37 GHz Amplifiers - Linear & Power - Chip Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1029 v01.0412 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER 29 - 37 GHz Amplifiers - Linear & Power - Chip Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10