HITTITE HMC999

HMC999
v00.0611
Amplifiers - Linear & Power - Chip
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Typical Applications
Features
The HMC999 is ideal for:
High P1dB Output Power: 38 dBm
• Test Instrumentation
High Psat Output Power: 40 dBm
• Military Communications
High Output IP3: 47 dBm
• Jammers and Decoys
High Gain: 11 dB
• Radar, EW & ECM Subsystems
Supply Voltage: +28V, +40V or +48V @ 1100 mA
• Space
50 Ohm Matched Input/Output
Die Size: 3.66 x 1.91 x 0.1 mm
Functional Diagram
General Description
The HMC999 is a GaN HEMT MMIC Distributed
Power Amplifier which operates between 0.01 and 10
GHz. The amplifier provides 11 dB of gain, 47 dBm
output IP3 and 38 dBm of output power at 1 dB gain
compression while requiring 1100 mA from a +48 V
supply. The HMC999 amplifier provides 10 Watts of
saturated power in a chip area only 7 mm2, equating
to a power density of 1.5 W/mm2 over 3 decades of
bandwidth. All data is taken with the chip connected
via two 25 mm (1 mil) wire bonds of minimal length
0.31 mm (12 mils).
Electrical Specifications, TA = +25°C [2], Vdd = +48 V, Vgg2 = +22 V, Idd = 1100 mA* [1]
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
0.01 - 2
10.5
12.5
Typ.
Max.
Min.
2-6
9
11
8.5
Typ.
Max.
Units
6 - 10
GHz
10.5
dB
Gain Flatness
±0.8
±0.4
±0.7
dB
Gain Variation Over Temperature
0.017
0.02
0.025
dB/ °C
20
18
15
dB
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
13
36.5
38.5
15
36
38
34.5
14
dB
36.5
dBm
40.5
40
39.5
dBm
Output Third Order Intercept (IP3)
48
47
45.5
dBm
Supply Current
(Idd) (Vdd = 48V, Vgg = 22V Typ.)
1100
1100
1100
mA
* Adjust Vgg1 between -5 to 0 V to achieve Idd = 1100 mA typical.
[1] S parameter and OIP3 data taken at Idd=1000mA
[2] Probe station chuck temperature adjusted to bring backside of die to +25°C
0-1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
20
16
10
14
S21
S11
S22
0
-10
-20
+25C
+85C
12
10
8
-30
6
0
2
4
6
8
10
12
14
0
1
2
3
FREQUENCY (GHz)
0
0
-5
-5
+25C
+85C
-15
-20
-25
6
7
8
9
10
+25C
+85C
-10
-15
-20
-25
-30
-30
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
FREQUENCY (GHz)
5
6
7
8
9
10
Gain & Return Loss @ Vdd = 40V,
Idd = 1000 mA
20
20
10
10
RESPONSE (dB)
S21
S11
S22
0
-10
-20
-30
0.001
4
FREQUENCY (GHz)
Low Frequency Gain & Return Loss @
Vdd = 48V, Idd = 1000 mA
RESPONSE (dB)
5
Output Return Loss vs. Temperature @
Vdd = 48V, Idd = 1000 mA
RETURN LOSS (dB)
RETURN LOSS (dB)
Input Return Loss vs. Temperature @
Vdd =48V, Idd = 1000 mA
-10
4
FREQUENCY (GHz)
Amplifiers - Linear & Power - Chip
Gain vs. Temperature @ Vdd = 48V,
Idd = 1000 mA
GAIN (dB)
RESPONSE (dB)
Gain & Return Loss @ Vdd = 48V,
Idd = 1000 mA
S21
S11
S22
0
-10
-20
-30
0.01
0.1
FREQUENCY (GHz)
1
10
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
0-2
HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
16
10
14
S21
S11
S22
0
GAIN (dB)
RESPONSE (dB)
Gain vs. Supply Current @ Vdd = 48V
20
-10
-20
10
500 mA
600 mA
700 mA
800 mA
900 mA
1000 mA
6
0
2
4
6
8
10
12
14
0
1
2
3
FREQUENCY (GHz)
Gain vs. Supply Voltage @ Idd = 1000 mA
5
6
7
8
9
10
7
8
9
10
7
8
9
10
P1dB vs. Temperature
16
50
+48V
+40V
+28V
+25C
+85C
45
P1dB (dBm)
14
12
10
8
40
35
30
6
25
0
1
2
3
4
5
6
7
8
9
0
10
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Psat vs. Temperature
50
50
+28V
+40V
+48V
+25C
+85C
45
Psat (dBm)
45
P1dB (dBm)
4
FREQUENCY (GHz)
P1dB vs. Supply Voltage
40
35
30
40
35
30
25
25
0
1
2
3
4
5
6
FREQUENCY (GHz)
0-3
12
8
-30
GAIN (dB)
Amplifiers - Linear & Power - Chip
Gain & Return Loss @ Vdd = 28V,
Idd = 1000 mA
7
8
9
10
0
1
2
3
4
5
6
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
50
45
45
40
35
+28V
+40V
+48V
30
600 mA
700 mA
800 mA
900 mA
1000 mA
1100 mA
40
35
30
25
25
0
1
2
3
4
5
6
7
8
9
0
10
1
2
3
Psat vs. Supply Current
5
6
7
8
9
10
Output IP3 @ Pout = 26 dBm / Tone
50
60
55
45
25C
50
IP3 (dBm)
Psat (dBm)
4
FREQUENCY (GHz)
FREQUENCY (GHz)
40
35
600 mA
700 mA
800 mA
900 mA
1000 mA
1100 mA
30
45
40
35
25
30
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Amplifiers - Linear & Power - Chip
P1dB vs. Supply Current
50
P1dB (dBm)
Psat (dBm)
Psat vs. Supply Voltage
Output IM3 @ Vdd = +48V
80
70
2 GHz
4 GHz
6 GHz
8 GHz
IM3 (dBc)
60
50
40
30
20
10
10
12
14
16
18
20
22
24
26
28
30
32
34
Pout/Tone (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
0-4
HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Power Compression @ 4 GHz
Reverse Isolation vs. Temperature
0-5
-10
Pout(dBm), GAIN(dB), PAE(%)
REVERSE ISOLATION (dB)
1800
45
+25C
+85C
-20
-30
-40
-50
-60
40
1600
Pout
Gain
35
1400
PAE
30
1200
25
1000
800
20
Idd
15
0
1
2
3
4
5
6
7
8
9
600
10
400
5
200
0
0
-70
0
10
Idd (mA)
4
8
12
16
20
24
28
32
INPUT POWER (dBm)
FREQUENCY (GHz)
Power Dissipation
60
POWER DISSIPATION (W)
Amplifiers - Linear & Power - Chip
0
4 GHz
8 GHz
56
52
48
44
40
0
4
8
12
16
20
24
28
32
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Second Harmonics vs. Idd @
Pout = +26 dBm, Vdd = 48V
Second Harmonics vs. Vdd @
Pout = +26 dBm, Idd = 1100 mA
60
50
40
30
800mA
900mA
1000mA
1100mA
20
10
60
+48V
+40V
+28V
50
40
30
20
10
0
0
0
2
4
6
8
10
12
0
2
FREQUENCY(GHz)
70
60
60
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
8
10
12
Second Harmonics vs. Temperature
Vdd = 48V & Vgg = 22V & Idd = 1100 mA
Pout = 26 dBm
70
50
40
30
+14 dBm
+18 dBm
+22 dBm
+26 dBm
+30 dBm
10
6
FREQUENCY(GHz)
Second Harmonics vs. Pout
Vdd = 48V & Vgg = 22V & Idd = 1100 mA
20
4
+25C
+85C
50
40
30
20
10
0
0
0
2
4
6
8
10
12
0
2
FREQUENCY(GHz)
4
6
8
10
12
FREQUENCY(GHz)
Amplifiers - Linear & Power - Chip
70
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
70
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
56V
Gate Bias Voltage (Vgg1)
-5 to 0V
Gate Bias Voltage (Vgg2)
6V to (Vdd - 8V)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RF Input Power @ Fin < 0.2GHz (RFIN) 28 dBm
RF Input Power @ Fin > 0.2GHz (RFIN) 36 dBm
Channel Temperature
225 °C
Continuous Pdiss (T= 85 °C)
(derate 729 mW/°C above 85 °C)
102 W
Thermal Resistance
[1]
1.37 °C/W
Output Power into VSWR > 7:1
40 dBm
Storage Temperature
-65 to 150 °C
Operating Temperature
-55 to 85 °C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
28
1100
40
1100
48
1100
[1] Includes 0.5 mil thick thermally conductive epoxy layer. Epoxy thermal conductivity = 60 W/mC
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
0-6
HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Amplifiers - Linear & Power - Chip
Outline Drawing
Die Packaging Information
[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
0-7
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS ±.002
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Pad Descriptions
Function
Description
1
RFIN
This pad is DC coupled and matched to 50 Ohms.
External blocking capacitor is required
2, 6
VGG2
Gate control 2 for amplifier. Attach bypass capacitor
per application circuit herein. For nomiinal operation
+22V should be applied to either pad 2 or pad 6.
3, 4
AGC1, AGC2
Low frequency termination. Attach bypass capacitor
per application circuit herein.
6
RFOUT &
VDD
RF output for amplifier. Connect DC bias (Vdd)
network to provide drain current Idd). See application
circuit herein.
7, 8
VGG1
Gate control 1 for amplifier. Attach bypass capacitor
per application circuit herein. Please follow “MMIC
Amplifier Biasing Procedure” application note. This
voltage may be applied to either pad.
Die Bottom
GND
Die bottom must be connected to RF/DC ground
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Amplifiers - Linear & Power - Chip
Pad Number
0-8
HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Amplifiers - Linear & Power - Chip
Assembly Diagram
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing ~1800 mA
0-9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the
die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
copper tungsten heat spreader which is then attached to the thermally
conductive ground plane (Figure 2).
0.102mm (0.004”) Thick GaN MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
0.102mm (0.004”) Thick GaN MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.150mm (0.005”) Thick
Copper Tungsten
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Amplifiers - Linear & Power - Chip
Mounting & Bonding Techniques for Millimeterwave GaN MMICs
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
0 - 10