Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC1086 v04.0714 AMPLIFIERS - LINEAR & POWER - CHIP 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features The HMC1086 is ideal for: High Psat: +44.5 dBm • Test Instrumentation Power Gain at Psat: 14 dB • General Communications High Output IP3: +48 dBm • Radar Small Signal Gain: 22 dB Supply Voltage: +28 V @ 1.1 A 50 Ohm Matched Input/Output Die Size: 3.4 x 4 x 0.1 mm2 Functional Diagram General Description The HMC1086 is a 25W Gallium Nitride (GaN) Power Amplifier MMIC which operates between 2 and 6 GHz. The amplifier typically provides 22 dB of small signal gain, +44.5 dBm of saturated output power, and +48 dBm output IP3 at +33 dBm output power per tone. The HMC1086 draws 1100 mA quiescent current from a +28V DC supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCM). All electrical performance data was acquired with die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina. Electrical Specifications, TA = +25 °C, Vdd = VD1 = VD2 = +28V, Idd = 1100 mA [1] Parameter Min. Frequency Range Small Signal Gain Typ. Max. Min. 2 - 3.5 21 22 Typ. Max. Min. 3.5 - 5 22 23 21 Typ. Max. Units 5-6 GHz 22 dB Gain Flatness ±0.5 ±0.5 ±0.5 dB Gain Variation Over Temperature dB/ °C 0.012 0.016 0.024 Input Return Loss 10 15 15 dB Output Return Loss 8 8 8 dB Power Gain (Pin @ 25 dBm) 18 18 18 dB 44.5 45 44.5 dBm Output Third Order Intercept (IP3) [2] 48 48 48 dBm Power Added Efficiency 42 37 34 % 1100 1100 1100 mA Saturated Output Power (Psat) Quiescent Supply Current (Idd @ Vdd = +28V) [1] Assumes eutectic attach of die to a 40 mil CuMo carrier, and 25 °C is maintained at the back of the carrier. [2] Measurement taken at Pout / tone = +33 dBm. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1086 v04.0714 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Gain and Return Loss Gain vs. Vdd 30 20 25 GAIN (dB) RESPONSE (dB) 10 0 -10 -20 20 15 -30 -40 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 10 1.5 6.5 2 2.5 3 FREQUENCY (GHz) S21 S11 Vdd= 24V S22 Input Return Loss 4 0 -5 -2 5 5.5 6 6.5 Vdd= 28V Vdd= 32V -4 RETURN LOSS (dB) -15 -20 -25 -30 -6 -8 -10 -12 -14 -16 -35 -18 -40 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 -20 1.5 6.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz) FREQUENCY (GHz) S11 S22 Pout vs. Frequency Power Gain vs. Frequency 30 50 25 POWER GAIN (dB) 45 POUT (dBm) 4.5 Output Return Loss 0 -10 RETURN LOSS (dB) 3.5 FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - CHIP 30 40 35 30 20 15 10 5 0 25 2 3 4 5 6 P1dB 25dBm Input Power 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Psat 25dBm Input Power Psat For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1086 v04.0714 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Power Added Efficiency vs. Pin Pout vs. Pin 50 50 45 40 POUT (dBm) P.A.E. (%) 35 30 25 20 10 35 25 5 0 20 6 9 12 15 18 21 24 27 30 33 6 9 12 15 PIN (dBm) 2 GHz 4 GHz 21 2 GHz 6 GHz Pout vs. Temperature at Pin= 25dBm 24 27 30 33 45 45 POUT (dBm) 50 40 4 GHz 6 GHz Pout vs. Vdd at Pin= 25dBm 50 35 40 35 30 30 2 3 4 5 2 6 3 +25C 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) +85C Vdd= 24V -40C Vdd= 28V Psat vs. Vdd 50 50 45 45 PSAT (dBm) PSAT (dBm) 18 PIN (dBm) Psat vs. Temperature 40 35 40 35 30 30 2 3 4 5 6 FREQUENCY (GHz) +25C 3 40 30 15 POUT (dBm) AMPLIFIERS - LINEAR & POWER - CHIP 45 +85C 2 3 4 5 6 FREQUENCY (GHz) -40C Vdd= 24V Vdd= 28V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1086 v04.0714 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz 60 3.5 55 3 50 2.5 45 2 1.5 40 35 1 30 0.5 25 0 20 6 9 12 15 18 21 24 27 30 33 3 6 9 12 PIN (dBm) 2 GHz 4 GHz 6 GHz 2 GHz IM3 vs. Pin/Tone 21 24 27 4 GHz 6 GHz 0 REVERSE ISOLATION (dB) 50 40 IM3 (dBc) 18 Reverse Isolation 60 30 20 10 0 3 6 9 12 15 18 21 24 27 -20 -40 -60 -80 -100 1.5 2 2.5 3 PIN/TONE (dBm) 2 GHz 3.5 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz) 4 GHz 6 GHz S12 Power Dissipation vs. Pin Second Harmonic vs. Pin 70 0 SECOND HARMONIC (dB) 60 50 PDISS (W) 15 PIN/TONE (dBm) AMPLIFIERS - LINEAR & POWER - CHIP OIP3 vs Pin/Tone 4 IP3 (dBm) IDS (mA) Drain Current vs. Pin 40 30 20 -20 -40 -60 -80 10 0 -100 6 9 12 15 18 21 24 27 30 33 5 10 15 PIN (dBm) 2 GHz 4 GHz 20 25 30 PIN (dBm) 6 GHz 2 GHz 4 GHz 6 GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1086 v04.0714 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz AMPLIFIERS - LINEAR & POWER - CHIP Absolute Maximum Ratings[1] 5 Drain Bias Voltage (Vdd) +32V Gate Bias Voltage (Vgg) -8 V to 0V Maximum Forward Gate Current 11 mA Maximum RF Input Power (RFIN) 33 dBm Maximum VSWR[2] 6:1 Maximum Junction Temperature (Tj) 225 °C Maximum Pdiss (T = 85 °C) (Derate 455 mW/°C above 85 °C) 63.6W Thermal Resistance (RTH)[3] 2.2°C/W Operating Temperature -40 °C to +85°C Storage Temperature -55 °C to 150 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS [1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings only. Continuous operation of the device at these conditions is not implied. [2] Assumes 0.5 mil AuSn die attach to a 40 mil CuMo Carrier with 85°C at the back of the carrier. [3] Restricted by maximum power dissipation Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] F or alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± .002 Outline Drawing For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1086 v04.0714 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Pad Descriptions Function Description 1 RFIN This Pad is RF coupled and is matched to 50 Ohms. The pad has zero Ohms DC resistance. 2, 10 VG1 Gate control voltage for first stage. 3, 9 VG2 Gate control voltage for second stage. 4,8 VD1 Drain bias for first stage. 5, 7 VD2 Drain bias for second stage. 6 RFOUT This Pad is RF coupled and is matched to 50 Ohms. Die Bottom GND Die Bottom must be connected to RF/DC ground. Pin Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] AMPLIFIERS - LINEAR & POWER - CHIP Pad Number 6 HMC1086 v04.0714 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz AMPLIFIERS - LINEAR & POWER - CHIP Application Circuit 7 Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1086 v04.0714 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz The die should be eutectically attached directly to the ground plane (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254 mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150 mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102 mm (4 mil) thick die to a copper tungsten or CuMo heat spreader which is then attached to the thermally conductive ground plane (Figure 2). 0.102mm (0.004”) Thick GaN MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076 mm to 0.152 mm (3 to 6 mils). Handling Precautions Figure 1. 0.102mm (0.004”) Thick GaN MMIC Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Copper Tungsten 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Die placement: A heated vacuum collect (180 °C) is the preferred method of pick up. Ensure that the area of vacuum contact on the die is minimized to prevent cracking under differential pressure. All air bridges (if applicable) must be avoided during placement. Minimize impact forces applied to the die during auto-placement. AMPLIFIERS - LINEAR & POWER - CHIP Mounting & Bonding Techniques for GaN MMICs Mounting The chip is back-metallized with a minimum of 5 microns of gold and is the RF ground and thermal interface. It is recommended that the chip be die mounted with AuSn eutectic preforms. The mounting surface should be clean and flat. Eutectic Reflow Process: An 80/20 gold tin 0.5 mil (13 um) thick preform is recommended with a work surface temperature of 280 °C. Limit exposure to temperatures above 300 °C to 30 seconds maximum. A die bonder or furnace with 95 % N2 / 5 % H2 reducing atmosphere should be used. No organic flux should be used. Coefficient of thermal expansion matching is critical for long term reliability. Die Attach Inspection: X-ray or acoustic scan is recommended. Wire Bonding Thermosonic ball or wedge bonding is the preferred interconnect technique. Gold wire must be used in a diameter appropriate for the pad size and number of bonds applied. Force, time and ultrasonics are critical parameters: optimize for a repeatable, high bond pull strength. Limit the die bond pad surface temperature to 200 °C maximum. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8