HMC906 v03.0911 Amplifiers - Linear & Power - Chip 3 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Typical Applications Features The HMC906 is ideal for: Saturated Output Power: +34 dBm @ 22% PAE • Point-to-Point Radios High Output IP3: +43 dBm • Point-to-Multi-Point Radios High Gain: 23 dB • VSAT DC Supply: +6V @ 1200 mA • Military & Space No External Matching Required Die Size: 3.18 x 2.73 x 0.1 mm Functional Diagram General Description The HMC906 is a four stage GaAs pHEMT MMIC 2 Watt Power Amplifier which operates between 27.3 and 33.5 GHz. The HMC906 provides 23 dB of gain, and +34 dBm of saturated output power and 22% PAE from a +6V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via two 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +6 V, Idd = 1200 mA [1] Parameter Min. Frequency Range Gain 20 Gain Variation Over Temperature Input Return Loss Typ. Max. Min. 27.3 - 31.5 23 20 0.022 10 14 Typ. 31.5 - 33.5 10 Max. Units GHz 23 dB 0.026 dB/ °C 14 dB Output Return Loss 8 12 10 12 dB Output Power for 1 dB Compression (P1dB) 31 33 30.5 32.5 dBm 33.5 dBm 42 dBm 1200 mA Saturated Output Power (Psat) Output Third Order Intercept (IP3)[2] 34 40 Total Supply Current (Idd) 43 1200 39 [1] Adjust Vgg (pad 2 or 12) between -2 to 0V to achieve Idd = 1200 mA typical. [2] Measurement taken at +6V @ 1200 mA, Pout / Tone = +23 dBm 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 30 30 0 22 -10 +25C +85C -55C 18 -20 -30 14 20 22 24 26 28 30 32 FREQUENCY (GHz) 34 36 38 29 -10 -10 RETURN LOSS (dB) 0 -20 +25C +85C -55C -40 31 32 33 34 -20 +25C +85C -55C -30 -40 27 28 29 30 31 32 33 34 25 26 27 28 FREQUENCY (GHz) 30 31 32 33 34 P1dB vs. Supply Voltage 37 35 35 P1dB (dBm) 37 33 31 +25C +85C -55C 29 29 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 30 Output Return Loss vs. Temperature 0 -30 28 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 27 33 31 +5.0V +5.5V +6.0V 29 27 Amplifiers - Linear & Power - Chip 3 26 S21 S11 S22 10 GAIN (dB) RESPONSE (dB) 20 27 27 28 29 30 31 FREQUENCY (GHz) 32 33 34 27 28 29 30 31 32 33 34 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-2 HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Psat vs. Supply Voltage 37 35 35 Psat (dBm) 37 33 +25C +85C -55C 31 31 +5.0V +5.5V +6.0V 27 27 27 28 29 30 31 32 33 27 34 28 29 31 32 33 34 33 34 Psat vs. Supply Current (Idd) 37 37 35 35 Psat (dBm) P1dB (dBm) P1dB vs. Supply Current (Idd) 33 31 1000mA 1200mA 1300mA 29 30 FREQUENCY (GHz) FREQUENCY (GHz) 33 1000 mA 1200 mA 1300 mA 31 29 27 27 27 28 29 30 31 32 33 34 27 28 29 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +23 dBm 31 32 Output IP3 vs. Supply Current, Pout/Tone = +23 dBm 50 45 45 40 40 IP3 (dBm) 50 +25C +85C -55C 35 30 FREQUENCY (GHz) 30 1000 mA 1200 mA 1300 mA 35 30 25 25 27 28 29 30 31 FREQUENCY (GHz) 3-3 33 29 29 IP3 (dBm) Amplifiers - Linear & Power - Chip 3 Psat (dBm) Psat vs. Temperature 32 33 34 27 28 29 30 31 32 33 34 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +23 dBm Output IM3 @ Vdd = +5V 50 70 60 3 IM3 (dBc) IP3 (dBm) 50 40 +5.0V +5.5V +6.0V 35 40 30 29 GHz 30 GHz 31 GHz 32 GHz 33 GHz 20 30 10 25 0 27 28 29 30 31 32 33 34 13 15 17 FREQUENCY (GHz) 70 60 60 50 50 40 30 29 GHz 30 GHz 31 GHz 32 GHz 33 GHz 10 23 25 27 23 25 27 40 29 GHz 30 GHz 31 GHz 32 GHz 33 GHz 30 20 10 0 0 13 15 17 19 21 23 25 27 13 15 17 Pout/TONE (dBm) 19 21 Pout/TONE (dBm) Power Compression @ 29.5 GHz Reverse Isolation vs. Temperature 36 0 32 Pout Gain PAE 28 -10 ISOLATION (dB) Pout (dBm), GAIN (dB), PAE (%) 21 Output IM3 @ Vdd = +6V 70 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd = +5.5V 20 19 Pout/TONE (dBm) Amplifiers - Linear & Power - Chip 45 24 20 16 12 -20 +25C +85C -55C -30 -40 -50 8 -60 4 0 -70 -9 -6 -3 0 3 6 INPUT POWER (dBm) 9 12 15 27 28 29 30 31 32 33 34 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-4 HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Gain & Power vs. Supply Current @ 29.5 GHz Gain & Power vs. Supply Voltage @ 29.5 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) 35 30 Gain P1dB Psat 25 20 1000 35 30 25 Gain P1dB Psat 20 15 15 1100 1200 5 1300 5.5 Idd (mA) 6 Vdd (V) Power Dissipation 10 9 POWER DISSIPATION (W) Amplifiers - Linear & Power - Chip 3 Gain (dB), P1dB (dBm), Psat (dBm) 40 8 7 6 5 Max Pdis @ 85C 28GHz 29GHz 30GHz 31GHz 4 3 2 1 0 0 4 8 12 16 INPUT POWER (dBm) Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vd) +7V Vdd (V) Idd (mA) RF Input Power (RFIN) +20 dBm +5.0 1200 Channel Temperature 150 °C +5.5 1200 +6.0 1200 Continuous Pdiss (T= 85 °C) (derate 135 mW/°C above 85 °C) 8.8 W Thermal Resistance (channel to die bottom) 7.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd = 1200 mA at +6.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± 0.002” For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - Chip 3 3-6 HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Pad Descriptions Pad Number Function Description RFIN This pad is AC coupled and matched to 50 Ohms over the operating frequency range. 2, 12 Vgg Gate control for amplifier. External bypass caps 100 pF, 0.01 µF and 4.7 µF are required. Only one pad connection is required as these two pads are connected on-chip. 3-6 Vdd1 Drain bias voltage for the top half of the amplifier. External bypass capacitors of 100 pF required for each pad, followed by common 0.1 µF and 4.7 µF are capacitors. 7 RFOUT This pad is AC coupled and matched to 50 Ohms. 8 - 11 Vdd2 Drain bias voltage for the lower half of the amplifier. External bypass capacitors of 100 pF required for each pad, followed by common 0.1 µF and 4.7 µF are capacitors. Die Bottom GND Die bottom must be connected to RF/DC ground. 1 Amplifiers - Linear & Power - Chip 3 Interface Schematic Application Circuit *Vgg may be applied to either pad 2 or pad 12. 3-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Assembly Diagram [1] [1] Vgg may be applied to either pad 2 or pad 12. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - Chip 3 3-8 HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Amplifiers - Linear & Power - Chip 3 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). 3-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC906 v03.0911 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Notes: Amplifiers - Linear & Power - Chip 3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3 - 10