HMC344 v02.0804 SWITCHES - CHIP 4 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz Typical Applications Features The HMC344 is ideal for: Broadband Performance: DC - 8.0 GHz • Telecom Infrastructure Low Insertion Loss: 1.8 dB @ 6.0 GHz • Microwave Radio & VSAT Integrated 2:4 TTL Decoder • Military & Space Small Size: 1.08 mm x 1.05 mm x 0.10 mm • Test Instrumentation General Description Functional Diagram The HMC344 is a broadband non-reflective GaAs MESFET SP4T switch chip. Covering DC to 8.0 GHz, this switch offers high isolation and low insertion loss and extends the frequency coverage of Hittite’s SP4T switch product line. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to two. The switch operates using a negative control voltage of 0/-5V, and requires a fixed bias of -5V. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System Parameter Frequency Typ. Max. Units 1.8 1.9 2.1 2.2 dB dB Insertion Loss Isolation DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 8.0 GHz 44 37 34 30 49 42 39 35 dB dB dB dB 10 7 14 10 dB dB Return Loss “On State” DC - 2.0 GHz DC - 8.0 GHz Return Loss “Off State” DC - 8.0 GHz 7 10 dB Input Power for 1 dB Compression 0.5 - 8.0 GHz 17 21 dBm Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone) 0.5 - 8.0 GHz 37 40 dBm 35 150 ns ns Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 4 - 20 Min. DC - 6.0 GHz DC - 8.0 GHz DC - 8.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC344 v02.0804 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz Insertion Loss vs. Temperature Isolation 0 1 RF1 RF2 RF3 RF4 + 25C + 85C - 55C -20 ISOLATION (dB) INSERTION LOSS (dB) -10 0 -1 -2 -30 -40 4 -50 -60 -3 -80 -4 0 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 0 9 Return Loss 2 3 4 5 6 FREQUENCY (GHz) 7 8 9 0.1 and 1 dB Input Compression Point 25 INPUT COMPRESSION POINT (dBm) 0 RFC RF1, RF2, RF3, RF4 ON RF1, RF2, RF3, RF4 OFF -5 -10 -15 24 1dB Compression Point 0.1dB Compression Point 23 22 21 20 19 18 17 16 15 -20 0 1 2 3 4 5 6 7 8 9 2 3 4 FREQUENCY (GHz) 5 6 7 8 9 FREQUENCY (GHz) Input Third Order Intercept Point iNPUT THIRD ORDER INTERCEPT (dBm) RETURN LOSS (dB) 1 SWITCHES - CHIP -70 45 44 43 42 41 40 39 RF1 RF2 RF3 RF4 38 37 36 35 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 21 HMC344 v02.0804 Absolute Maximum Ratings SWITCHES - CHIP 4 4 - 22 Bias Voltage Range (Vee) -7.0 Vdc Control Voltage Range (A & B) Vee -0.5V to +1.0 Vdc Channel Temperature 150 °C Thermal Resistance (Insertion Loss Path) 143 °C/W Thermal Resistance (Terminated Path) 1,030 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Maximum Input Power +24 dBm ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz Truth Table Control Input Signal Path State A B RF COM to: High High RF1 Low High RF2 High Low RF3 Low Low RF4 Bias Voltage & Current Vee Range= -5.0 Vdc ±10% Vee (Vdc) Idd (Typ) (mA) Idd (Max) (mA) -5.0 3.0 6.0 TTL/CMOS Control Voltages State Bias Condition Low -3V to 0 Vdc @ 60 uA Typ. High -5 to 4.2 Vdc @ 5 uA Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC344 v02.0804 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz Outline Drawing SWITCHES - CHIP 4 Die Packaging Information [1] NOTES: 1. DIMENSIONS IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS 0.004”. Standard Alternate WP-2 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3. TYPICAL BOND PAD IS 0.004” SQUARE. 4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 23 HMC344 v02.0804 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz Pad Descriptions Pad Number Function Description 1, 2, 3, 4, 5, 9 RF4, RFC, RF1, RF2, RF3 These pads are DC coupled and matched to 50 Ohms. Blocking capacitors are required. 6 A See truth table and control voltage table. 7 B See truth table and control voltage table. 8 Vee Supply Voltage -5.0 Vdc ±10% Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic SWITCHES - CHIP 4 TTL Interface Circuit Note: Control inputs A and B can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and to Vee (pad) of the RF Switch. 4 - 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC344 v02.0804 GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz Assembly Diagram SWITCHES - CHIP 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 25