HMC327MS8G / 327MS8GE v06.1209 11 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features The HMC327MS8G(E) is ideal for: High Gain: 21 dB • Wireless Local Loop Saturated Power: +30 dBm @ 45% PAE • WiMAX & Fixed Wireless Output P1dB: +27 dBm • Access Points Single Supply: +5V • Subscriber Equipment Power Down Capability Low External Part Count LINEAR & POWER AMPLIFIERS - SMT Compact MSOP Package: 14.8 mm2 Functional Diagram General Description The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a single +5V supply. Power down capability is available to conserve current consumption when the amplifier is not in use. Electrical Specifi cations, TA = +25 °C, Vs = 5V, Vctl = 5V Parameter Min. Frequency Range Typ. Max. 3-4 Gain 17 Gain Variation Over Temperature GHz 21 24 dB 0.025 0.035 dB / °C Input Return Loss 15 Output Return Loss 8 dB 27 dBm 30 dBm 40 dBm Output Power for 1dB Compression (P1dB) 24 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 36 Noise Figure Supply Current (Icq) Vctl* = 0V/5V dB 5 dB 0.002 / 250 mA Control Current (Ipd) Vctl* = 5V 7 mA Switching Speed tON, tOFF 40 ns *See Application Circuit for proper biasing configuration. 11 - 2 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 24 20 S21 S11 S22 5 GAIN (dB) -5 16 +25 C +85 C -40 C 12 -15 4 -25 0 2 2.5 3 3.5 4 4.5 5 2.5 3 FREQUENCY (GHz) 4 4.5 Output Return Loss vs. Temperature 0 0 +25 C +85 C -40 C +25 C +85 C -40 C -3 RETURN LOSS (dB) -5 RETURN LOSS (dB) 3.5 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 -15 -20 -6 -9 -12 -25 -30 2.5 -15 3 3.5 4 2.5 4.5 3 P1dB vs. Temperature 4 4.5 4 4.5 Psat vs. Temperature 34 30 30 Psat (dBm) 34 26 +25 C +85 C -40 C 22 3.5 FREQUENCY (GHz) FREQUENCY (GHz) P1dB (dBm) 11 8 18 LINEAR & POWER AMPLIFIERS - SMT RESPONSE (dB) 15 26 +25 C +85 C -40 C 22 18 14 14 2.5 3 3.5 FREQUENCY (GHz) 4 4.5 2.5 3 3.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 3 HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Power Compression @ 3.5 GHz Output IP3 vs. Temperature 44 Pout Gain PAE 40 39 32 IP3 (dBm) 34 24 16 24 8 19 0 -5 -1 3 7 11 +25 C +85 C -40 C 29 14 2.5 15 3 INPUT POWER (dBm) Noise Figure vs. Temperature +25 C +85 C -40 C 6 GAIN (dB) NOISE FIGURE (dB) 4 4 28 32 26 30 24 28 22 26 2 20 0 18 P1dB Psat Gain 3 3.5 4.5 Gain & Power vs. Supply Voltage 10 8 3.5 FREQUENCY (GHz) 4 4.5 24 22 4.75 5 FREQUENCY (GHz) 5.25 Vcc SUPPLY VOLTAGE (V) Reverse Isolation vs. Temperature Power Down Isolation 0 0 -10 +25 C +85 C -40 C -20 ISOLATION (dB) ISOLATION (dB) -10 -30 -40 -20 -30 -50 -60 -40 2.5 3 3.5 FREQUENCY (GHz) 11 - 4 4 4.5 2.5 3 3.5 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4.5 P1dB (dBm) & Psat (dBm) LINEAR & POWER AMPLIFIERS - SMT 11 Pout (dBm), GAIN (dB), PAE (%) 48 HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Absolute Maximum Ratings 20 150 Icq 100 15 P1dB Psat Gain 10 50 0 5 2.5 Icq (mA) GAIN (dB), P1dB (dBm), Psat (dBm) 200 25 3 3.5 4 4.5 Collector Bias Voltage (Vcc) +5.5V Control Voltage (Vpd) +5.5V RF Input Power (RFIN)(Vs = Vctl = +5V) +16 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 29 mW/°C above 85 °C) 1.88 W Thermal Resistance (junction to ground paddle) 34 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 5 Vctl (V) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 11 LINEAR & POWER AMPLIFIERS - SMT 250 30 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC327MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC327MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H327 XXXX [2] H327 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 5 HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Pin Descriptions Pin Number Function Description 1 Vpd Power Control Pin. For proper control bias, this pin should be connected to 5V through a series resistor of 130 Ohms. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 2, 4, 7 GND Ground: Backside of package has exposed metal ground paddle that must be connected to ground thru a short path. Vias under the device are required. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 5, 6 RFOUT RF output and bias for the output stage. The power supply for the output device needs to be supplied to these pins. 8 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed as close to the device as possible. LINEAR & POWER AMPLIFIERS - SMT 11 Interface Schematic Application Circuit TL1 TL2 TL3 Impedance 50 Ohm 50 Ohm 50 Ohm Length 0.038” 0.231” 0.1” Note: C3 should be located <0.020” from Pin 8 (Vcc) Note: C2 Should be located < 0.020” from L1 11 - 6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC327MS8G / 327MS8GE v05.0509 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Evaluation PCB List of Materials for Evaluation PCB 104991 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 2 mm DC Header C1 - C3 330 pF Capacitor, 0603 Pkg. C4 1.2 pF Capacitor, 0603 Pkg. C5 2 pF Capacitor, 0402 Pkg. C6 2.2 μF Capacitor, Tantalum L1 3 nH Inductor, 0805 Pkg. R1 130 Ohm Resistor, 0603 Pkg. U1 HMC327MS8G(E) Amplifier PCB [2] 104829 Eval Board The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 7