HMC450QS16G / 450QS16GE v02.0406 LINEAR & POWER AMPLIFIERS - SMT 11 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Typical Applications Features The HMC450QS16G / HMC450QS16GE is ideal for power and driver amplifier applications: Gain: 26 dB • GSM, GPRS, & Edge +40 dBm Output IP3 • CDMA & WCDMA Integrated Power Control (Vpd) • Base Stations & Repeaters Included in the HMC-DK002 Designer’s Kit Functional Diagram General Description 32% PAE @ 28.5 dBm Output Power The HMC450QS16G & HMC450QS16GE are high efficiency GaAs InGaP HBT Medium Power MMIC amplifiers operating between 800 and 1000 MHz. The amplifier is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the higher band HMC413QS16G 1.62.3 GHz PA. With a minimum of external components, the amplifier provides 26 dB of gain, +40 dBm OIP3 and +28.5 dBm of saturated power from a +5V supply voltage. The integrated power control (Vpd) can be used for full power down or RF output power/current control. The combination of high gain and high output IP3 make the HMC450QS16G & HMC450QS16GE ideal linear drivers for Cellular, PCS & 3G applications. Electrical Specifi cations, TA = +25° C, Vs = +5V, Vpd = +4V [1] Parameter Min. Frequency Range Typ. Max. 0.8 - 1.0 Gain 23 Gain Variation Over Temperature GHz 26 0.015 Units dB 0.025 dB/°C Input Return Loss 17 dB Output Return Loss 13 dB 26 dBm 28.5 dBm 40 dBm Output Power for 1 dB Compression (P1dB) 23 Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] 37 Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed tON, tOFF 8 dB 310 mA 12 mA 10 ns [1] Specifications and data reflect HMC450QS16G measured using the application circuit found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone output power of +15 dBm per tone, 1 MHz spacing. 11 - 114 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Broadband Gain & Return Loss Gain vs. Temperature 30 32 25 20 30 28 S21 S11 S22 5 0 -5 -10 26 11 24 -15 -20 +25 C +85 C -40 C 22 -25 -30 0.6 0.7 0.8 0.9 1 1.1 20 0.7 1.2 0.8 FREQUENCY (GHz) Input Return Loss vs. Temperature 1 1.1 Output Return Loss vs. Temperature 0 0 -5 +25 C +85 C -40 C -10 RETURN LOSS (dB) RETURN LOSS (dB) 0.9 FREQUENCY (GHz) -15 -20 +25 C +85 C -40 C -5 -10 -15 -25 -30 0.7 0.8 0.9 1 -20 0.7 1.1 0.8 FREQUENCY (GHz) 1 1.1 Power Down Isolation vs. Temperature 0 0 -10 -10 -20 -20 ISOLATION (dB) ISOLATION (dB) Reverse Isolation vs. Temperature +25 C +85 C -40 C -30 -40 -50 -30 +25 C +85 C -40 C -40 -50 -60 -60 -70 0.7 0.9 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT 10 GAIN (dB) RESPONSE (dB) 15 -70 0.8 0.9 FREQUENCY (GHz) 1 1.1 -80 0.7 0.8 0.9 1 1.1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 115 HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Psat vs. Temperature 30 30 29 29 28 28 27 27 PSAT (dBm) 11 P1dB (dBm) P1dB vs. Temperature 26 25 24 +25 C +85 C -40 C 23 22 24 +25 C +85 C -40 C 22 21 20 0.7 0.8 0.9 1 20 0.7 1.1 0.8 0.9 FREQUENCY (GHz) 1 1.1 12 44 10 NOISE FIGURE (dB) 42 OIP3 (dBm) 1.1 Noise Figure vs. Temperature 46 40 38 36 +25 C +85 C -40 C 34 8 6 +25 C +85 C -40 C 4 2 32 30 0.7 0.8 0.9 1 0 0.7 1.1 0.8 0.9 FREQUENCY (GHz) FREQUENCY (GHz) 30 28 24 Gain Psat P1dB 22 3 3.25 3.5 3.75 4 4.25 4.5 Vcc SUPPLY VOLTAGE (Vdc) 4.75 5 5.25 360 40 36 320 Icc 32 280 28 240 24 200 20 160 16 120 Gain Psat P1dB OIP3 12 80 40 8 2.8 3 3.2 3.4 3.6 3.8 Vpd (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 Icc (mA) 26 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Gain, Power, OIP3 and Supply Current vs. Power Down Voltage @ 900 MHz Gain and Power vs. Supply Voltage @ 900 MHz, Vpd= 4V 20 2.75 1 FREQUENCY (GHz) Output IP3 vs. Temperature GAIN (dB), P1dB (dBm), Psat (dBm) LINEAR & POWER AMPLIFIERS - SMT 25 23 21 11 - 116 26 HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz ACPR vs. Supply Voltage @ 900 MHz CDMA IS95, 9 Channels Forward Power Compression @ 900 MHz -25 -30 Pout (dBm) Gain (dB) PAE (%) 32 CDMA IS95 Frequency: 900 MHz Integration BW: 1.228 MHz Forward Link, 9 Channels -35 -40 ACPR (dBc) 28 24 20 16 4.5V -45 -50 5.5V 5V -55 11 -60 -65 12 -70 8 -75 4 -80 0 -20 -85 -16 -12 -8 -4 0 4 Source ACPR 8 8 10 12 INPUT POWER (dBm) 14 16 18 20 Channel Power (dBm) Power Dissipation@ 900 MHz 2 1.8 Max Pdiss @ +85C 1.6 1.4 1.2 1 -20 -15 -10 -5 0 5 10 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 22 24 LINEAR & POWER AMPLIFIERS - SMT 36 POWER DISSIPATION (W) Pout (dBm), GAIN (dB), PAE (%) 40 11 - 117 HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Typical Supply Current vs. Supply Voltage Absolute Maximum Ratings LINEAR & POWER AMPLIFIERS - SMT 11 Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage (Vpd1, Vpd2) +5Vdc RF Input Power (RFIN)(Vs = +5Vdc, VPD = +4.0 Vdc) +10 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 28 mW/°C above 85 °C) 1.86 W Thermal Resistance (junction to ground paddle) 35 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Vs (V) Icq (mA) 4.75 300 5.0 310 5.25 325 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC450QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC450QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H450 XXXX [2] H450 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 118 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Pin Descriptions Function Description 1, 2, 4, 5, 7, 8, 9, 10, 13, 15 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 3, 14 Vpd1, Vpd2 Power Control Pin. For maximum power, this pin should be connected to 4.0V. For 5V operation, a dropping resistor is required. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 6 RFIN This pin is AC coupled and matched to 50 Ohms from 0.8 to 1.0 GHz. 11, 12 RFOUT RF output and bias for the output stage. 16 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 LINEAR & POWER AMPLIFIERS - SMT Pin Number 11 - 119 HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Application Circuit LINEAR & POWER AMPLIFIERS - SMT 11 Recommended Component Values C1, C2, C7, C8 100 pF C3 1000 pF C4 3.9 pF C5 1.2 pF C6 27 pF C9, C10 2.2 μF L1 1.9 nH L2 1.0 nH L3 56 nH R1, R2 50 Ohms TL1 TL2 TL3 TL4 TL5 TL6 Impedance 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm Physical Length 0.08” 0.05” 0.02” 0.02” 0.02” 0.02” Electrical Length 4˚ 2.5˚ 1.02˚ 1.02˚ 1.02˚ 1.02˚ PCB Material: 10 mil Rogers 4350 Er = 3.48 11 - 120 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC450QS16G / 450QS16GE v02.0406 GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz Evaluation PCB List of Materials for Evaluation PCB 108349 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1, C7, C8 100 pF Capacitor, 0402 Pkg. C2 100 pF Capacitor, 0603 Pkg. C3 1000 pF Capacitor, 0603 Pkg. C4 3.9 pF Capacitor, 0402 Pkg. C5 1.2 pF Capacitor, 0402 Pkg. C6 27 pF Capacitor, 0402 Pkg. C9, C10 2.2 uF Capacitor, Tantalum L1 1.9 nH Inductor 0402 Pkg. L2 1.0 nH Inductor, 0402 Pkg. L3 56nH Inductor, 0805 Pkg. R1, R2 50 Ohms Resistor, 0402 Pkg. U1 HMC450QS16G / HMC450QS16GE Power Amp. PCB [2] 108191 Evaluation PCB, 10 mils The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 121