HMC330 v01.0301 MIXERS - CHIP 3 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC330 is ideal for: Sub-Harmonically Pumped (x2) LO • LMDS Input IP3: 17 dBm • Point-to-Point Radios • SATCOM 2LO/RF Isolation: 48 dB ns g i s De General Description w e N is a broadband double balr MMIC The HMC330 o f edsub-harmonically pumped passive mixer anced d n me that may be used as an upconverter or downconm o verter. The mixer requires no external matching ec R or bias. This design was optimized to provide t No better 1dB compression performance as comSmall Size: 0.97 mm2 Functional Diagram pared to the HMC266 under the same LO drive levels. The HMC330 provides greater than 38 dB LO to RF and 2LO to RF isolation performance. Measurements were made with the chip mounted and ribbon bonded into a 50-ohm microstrip test fixture that contains 5-mil alumina substrates between the chip and K-connectors. Measured data includes the parasitic effects of the assembly. RF connections to the chip were made with 0.076 mm (3-mil) ribbon bond with minimal length <0.31mm (<12 mil). Electrical Specifi cations, TA = +25° C LO = +14 dBm, IF = 2.5 GHz Parameter Units Min. Typ. Max. Frequency Range, RF 25 - 40 GHz Frequency Range, LO 12.5 - 20 GHz Frequency Range, IF 2-4 GHz Conversion Loss 13 17 dB Noise Figure (SSB) 13 17 dB 2LO to RF Isolation 40 48 dB LO to RF Isolation 30 38 dB 2LO to IF Isolation 50 60 dB RF to IF Isolation 27 37 dB LO to IF Isolation 38 48 dB IP3 (Input) +13 +17 dBm 1 dB Compression (Input) +4 +8 dBm * Unless otherwise noted, all measurements performed as downconverter, IF= 2.5 GHz. 3-1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC330 v01.0301 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR Conversion Gain vs. Temperature @ LO = +14 dBm 0 Isolation @ LO = +14 dBm 0 -30 -40 wD e N or f d de n e mm o c Re t o N -50 3 ns g i s e -60 -15 -70 -80 -20 20 25 30 35 40 20 25 35 40 Return Loss@ LO = +14 dBm Conversion Gain vs. LO Drive 0 0 -5 +12 dBm +14 dBm +10 dBm -10 RETURN LOSS (dB) CONVERSION GAIN (dB) 30 FREQUENCY (GHz) FREQUENCY (GHz) -15 MIXERS - CHIP -10 RF/IF LO/RF LO/IF 2LO/RF 2LO/IF -20 ISOLATION (dB) CONVERSION GAIN (dB) -10 +25C -55C +85C -5 -5 -10 LO RF +8 dBm +16 dBm -15 -20 20 25 30 35 0 40 5 10 15 20 25 30 35 40 FREQUENCY (GHz) FREQUENCY (GHz) Upconverter Performance Conversion Gain @ LO = +14 dBm IF Bandwidth @ LO = +14 dBm 0 0 CONVERSION GAIN (dB) RETURN LOSS CONVERSION GAIN RESPONSE (dB) -5 -10 -15 -20 -5 -10 -15 -20 0 1 2 3 FREQUENCY (GHz) 4 5 20 25 30 35 40 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-2 HMC330 v01.0301 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR Input IP3 vs. Temperature @ LO = +14 dBm * Input IP3 vs. LO Drive * 30 MIXERS - CHIP +12 dBm +14 dBm +16 dBm 20 15 -55C +25C +85C 25 IP3 (dBm) 25 IP3 (dBm) 3 30 20 ew N r fo d e end m com e R Not ns g i s De 15 10 10 20 25 30 35 40 20 25 FREQUENCY (GHz) 30 35 40 FREQUENCY (GHz) Input IP2 vs. Temperature @ LO = +14 dBm * Input IP2 vs. LO Drive * 95 95 -55C +25C +85C +12 dBm +14 dBm +16 dBm 90 IP2 (dBm) IP2 (dBm) 90 85 85 80 80 20 25 30 35 40 20 25 FREQUENCY (GHz) 30 Input P1dB vs. Temperature @ LO = +14 dBm nLO 14 mRF 13 +25C -55C +85C 12 ±5 ±4 ±3 44 61 ±2 ±1 11 10 -2 71 -1 71 0 35 5 8 1 x 61 7 2 9 75 85 3 5 25 30 35 0 -3 6 40 FREQUENCY (GHz) RF = 30.5 GHz @ -10 dBm LO = 14 GHz @ +14 dBm All values in dBc below IF output power level. * Two-tone input power = -10 dBm each tone, 1 MHz spacing. 3-3 40 MxN Spurious Outputs as a Down Converter 15 P1dB (dBm) 35 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 HMC330 v01.0301 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR Absolute Maximum Ratings RF / IF Input +27 dBm Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C wD e N or f d de n e mm o c Re t o N %,%#42/34!4)#3%.3)4)6%$%6)#% /"3%26%(!.$,).'02%#!54)/.3 ns g i s e Outline Drawing Die Packaging Information [1] Standard Alternate WP-8 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 MIXERS - CHIP LO Drive +13 dBm NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004”. 3. TYPICAL BOND PAD IS .004” SQUARE. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-4 HMC330 v01.0301 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). MIXERS - CHIP 3 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) ew N r Microstrip substrates should be brought as close to the die as possible in order to fo minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm e (3 d mils). d mils) is Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm en(<12 recommended to minimize inductance on RF, LO & IF ports. m com e R Handling Precautions ot N damage. Follow these precautions to avoid permanent Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting ns g i s De RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). 3-5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC330 Notes: GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR wD e N or f d de n e mm o c Re t o N ns g i s e For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 MIXERS - CHIP v01.0301 3-6