HMC338 v03.1007 MIXERS - SUB-HARMONIC - CHIP 3 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 26 - 33 GHz Typical Applications Features The HMC338 is ideal for: Integrated LO Amplifier: -5 dBm Input • General Purpose Applications Sub-Harmonically Pumped (x2) LO • 26 and 33 GHz Microwave Radios High 2LO/RF Isolation: 33 dB • Up and Down Converter for Point-to-Point Radios Die Size: 1.32 x 0.97 x 0.1 mm • Satellite Communication Systems Functional Diagram General Description The HMC338 chip is a general purpose sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifier which can be used as an upconverter or downconverter in the 26 to 33 GHz frequency range. The chip utilizes a GaAs PHEMT technology that results in a small overall chip area of 1.28mm2. The 2LO to RF isolation is excellent eliminating the need for additional filtering. The LO amplifier is a single bias (+3V to +4V) two stage design with only -5 dBm nominal drive requirement. All data is measured with the chip in a 50 ohm test fixture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). Electrical Specifi cations, TA = +25° C, As a Function of Vdd IF = 1 GHz LO = -5 dBm & Vdd = +4V Parameter Min. Typ. IF = 1 GHz LO = -5 dBm & Vdd = +3V Max. Min. Typ. Units Max. Frequency Range, RF 26 - 33 27 - 32 GHz Frequency Range, LO 13 - 16.5 13.5 - 16 GHz Frequency Range, IF DC - 2.5 DC - 2.5 GHz Conversion Loss 9 12 9 12 dB Noise Figure (SSB) 9 12 9 12 dB 2LO to RF Isolation 18 33 12 30 2LO to IF Isolation 30 40 25 40 dB IP3 (Input) 5 11 3 9 dBm 1 dB Compression (Input) -5 2 -5 0 dBm Supply Current (Idd) 28 50 25 dB 50 *Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz. 3 - 42 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC338 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 26 - 33 GHz Conversion Gain vs. Temperature @ LO = -5 dBm, Vdd= +3V 0 0 -4 -4 -8 -12 + 25 C + 85 C - 55 C -16 -20 3 -8 -12 + 25 C + 85 C - 55 C -16 -20 25 26 27 28 29 30 31 32 33 34 35 36 37 25 26 27 28 FREQUENCY (GHz) 0 0 -4 -4 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 31 32 33 34 35 36 37 34 35 36 37 Conversion Gain vs. LO Drive @ Vdd = +3V -8 -12 - 7 dBm - 5 dBm - 3 dBm -8 -12 - 7 dBm -16 - 5 dBm - 3 dBm -20 -20 25 26 27 28 29 30 31 32 33 34 35 36 37 25 26 27 28 FREQUENCY (GHz) 29 30 31 32 33 FREQUENCY (GHz) Isolation @ LO = -5 dBm, Vdd = +4V Isolation @ LO = -5 dBm, Vdd = +3V 10 10 0 0 -10 -10 ISOLATION (dB) ISOLATION (dB) 30 FREQUENCY (GHz) Conversion Gain vs. LO Drive @ Vdd = +4V -16 29 MIXERS - SUB-HARMONIC - CHIP CONVERSION GAIN (dB) CONVERSION GAIN (dB) Conversion Gain vs. Temperature @ LO = -5 dBm, Vdd= +4V -20 -30 -40 -20 -30 -40 RF/IF LO/RF LO/IF -50 2LO/RF 2LO/IF RF/IF LO/RF LO/IF -50 -60 2LO/RF 2LO/IF -60 24 25 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) 35 36 37 24 25 26 27 28 29 30 31 32 33 34 35 36 37 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 43 HMC338 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 26 - 33 GHz Input IP3 vs. LO Drive @ Vdd = +3V* 20 16 16 IP3 (dBm) 20 12 8 -7 dBm -5 dBm -3 dBm 4 -7 dBm -5 dBm -3 dBm 12 8 4 0 0 27 28 29 30 31 32 33 27 28 FREQUENCY (GHz) 16 16 12 12 IP3 (dBm) 20 8 + 25 C + 85 C - 55 C 31 33 32 33 + 25 C + 85 C - 55 C 0 27 28 29 30 31 32 33 27 28 FREQUENCY (GHz) 60 60 50 50 IP2 (dBm) 70 40 -7 dBm -5 dBm -3 dBm 20 30 31 Input IP2 vs. LO Drive @ Vdd = +3V* 70 30 29 FREQUENCY (GHz) Input IP2 vs. LO Drive @ Vdd = +4V* 40 30 -7 dBm -5 dBm -3 dBm 20 10 10 0 0 27 28 29 30 31 32 33 FREQUENCY (GHz) 27 28 29 30 31 FREQUENCY (GHz) * Two-tone input power = -10 dBm each tone, 1 MHz spacing. 3 - 44 32 8 4 0 IP2 (dBm) 30 Input IP3 vs. Temperature @ LO = -5 dBm, Vdd = +3V* 20 4 29 FREQUENCY (GHz) Input IP3 vs. Temperature @ LO = -5 dBm, Vdd = +4V* IP3 (dBm) MIXERS - SUB-HARMONIC - CHIP 3 IP3 (dBm) Input IP3 vs. LO Drive @ Vdd = +4V* For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 32 33 HMC338 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 26 - 33 GHz Input IP2 vs. Temperature @ LO = -5 dBm, Vdd = +3V* 70 60 60 50 50 40 30 + 25 C + 85 C - 55 C 20 3 40 30 + 25 C + 85 C - 55 C 20 10 10 0 0 27 28 29 30 31 32 33 27 28 29 30 31 FREQUENCY (GHz) Input P1dB vs. Temperature @ LO = -5 dBm, Vdd = +4V Input P1dB vs. Temperature @ LO = -5 dBm, Vdd = +3V 10 10 8 8 6 6 4 4 P1dB (dBm) P1dB (dBm) FREQUENCY (GHz) 2 0 -2 + 25 C + 85 C - 55 C -4 -6 -4 -8 29 30 31 32 26 27 28 FREQUENCY (GHz) 30 IF Return Loss @ LO = -5 dBm, Vdd = +4V 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 29 FREQUENCY (GHz) RF & LO Return Loss @ LO = -5 dBm, Vdd = +4V -10 LO RF -15 32 + 25 C + 85 C - 55 C -6 -10 28 31 0 -2 -8 27 33 2 -10 26 32 MIXERS - SUB-HARMONIC - CHIP 70 IP2 (dBm) IP2 (dBm) Input IP2 vs. Temperature @ LO = -5 dBm, Vdd = +4V* -20 IF -10 -15 -20 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz) 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) * Two-tone input power = -10 dBm each tone, 1 MHz spacing. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 45 HMC338 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 26 - 33 GHz Upconverter Performance Conversion Gain, LO = -5 dBm, Vdd = +4V 3 - 46 0 0 -4 -4 CONVERSION GAIN (dB) MIXERS - SUB-HARMONIC - CHIP 3 CONVERSION GAIN (dB) IF Bandwidth @ LO = -5 dBm -8 -12 Vdd= +3V Vdd= +4V -16 -20 Vdd= +3V Vdd= +4V -8 -12 -16 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 25 26 27 28 29 FREQUENCY (GHz) 30 31 MxN Spurious @ IF Port, Vdd = +4V ±5 ±4 ±3 ±1 0 52 54 35 0 53 4 1 2 3 mIF ±5 ±4 ±3 -3 -1 58 51 88 35 36 37 28 -8 X 51 42 13 ±2 ±1 0 49 -2 33 55 -1 41 X 43 0 -5 19 -16 1 44 X 40 2 33 54 36 3 RF = 31 GHz @ -10 dBm LO = 15 GHz @ -5 dBm All values in dBc below IF power level. Measured as downconverter 34 nLO ±2 -3 -2 33 MxN Spurious @ RF Port, Vdd = +4V nLO mRF 32 FREQUENCY (GHz) 47 IF = 1 GHz @ -10 dBm LO = 15 GHz @ -5 dBm All values in dBc below RF power level. Measured as upconverter For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 45 15 63 69 HMC338 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 26 - 33 GHz Absolute Maximum Ratings RF / IF Input (Vdd = +5V) +13 dBm LO Drive (Vdd = +5V) +13 dBm Vdd +5.5 Vdc Continuous Pdiss (Ta = 85 °C) (derate 2.64 mW/°C above 85 °C) 238 mW Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MIXERS - SUB-HARMONIC - CHIP 3 Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS IN INCHES (MILLIMETERS) 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 47 HMC338 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 26 - 33 GHz Pad Descriptions Pad Number MIXERS - SUB-HARMONIC - CHIP 3 3 - 48 Function Description 1 Vdd Power supply for the LO Amplifier. An external RF bypass capacitor of 100 - 330 pF is required. A MIM border capacitor is recommended. The bond length to the capacitor should be as short as possible. The ground side of the capacitor should be connected to the housing ground. 2 RF This pad is AC coupled and matched to 50 Ohm. 3 IF This pad is DC coupled and should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. Any applied DC voltage to this pin will result in die non-function and possible die failure. 4 LO This pad is AC coupled and matched to 50 Ohm. Interface Schematic Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC338 v03.1007 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 26 - 33 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. 0.127mm (0.005”) Thick Alumina Thin Film Substrate An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. Handling Precautions Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Follow these precautions to avoid permanent damage. 3 mil Ribbon Bond Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 3 MIXERS - SUB-HARMONIC - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 49