HITTITE HMC330_01

HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Typical Applications
Features
The HMC330 is ideal for:
Sub-Harmonically Pumped (x2) LO
• LMDS
Input IP3: 17 dBm
• Point-to-Point Radios
2LO/RF Isolation: 48 dB
• SATCOM
Small Size: 0.97 mm2
Functional Diagram
General Description
The HMC330 MMIC is a broadband double
balanced sub-harmonically pumped passive
mixer that may be used as an upconverter or
downconverter. The mixer requires no external
matching or bias. This design was optimized to
provide better 1dB compression performance
as compared to the HMC266 under the same
LO drive levels. The HMC330 provides greater
than 38 dB LO to RF and 2LO to RF isolation
performance. Measurements were made with the
chip mounted and ribbon bonded into a 50-ohm
microstrip test fixture that contains 5-mil alumina
substrates between the chip and K-connectors.
Measured data includes the parasitic effects of
the assembly. RF connections to the chip were
made with 0.076 mm (3-mil) ribbon bond with
minimal length <0.31mm (<12 mil).
MIXERS - CHIP
5
Electrical Specifi cations, TA = +25° C
LO = +14 dBm, IF = 2.5 GHz
Parameter
Units
Min.
Typ.
Max.
Frequency Range, RF
25 - 40
GHz
Frequency Range, LO
12.5 - 20
GHz
Frequency Range, IF
2-4
Conversion Loss
Noise Figure (SSB)
GHz
13
17
13
17
dB
2LO to RF Isolation
40
48
dB
LO to RF Isolation
30
38
dB
2LO to IF Isolation
50
60
dB
RF to IF Isolation
27
37
dB
LO to IF Isolation
38
48
dB
IP3 (Input)
+13
+17
dBm
1 dB Compression (Input)
+4
+8
dBm
* Unless otherwise noted, all measurements performed as downconverter, IF= 2.5 GHz.
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dB
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Conversion Gain vs.
Temperature @ LO = +14 dBm
Isolation @ LO = +14 dBm
0
0
+25C
-55C
+85C
-5
RF/IF
LO/RF
LO/IF
2LO/RF
2LO/IF
-20
ISOLATION (dB)
CONVERSION GAIN (dB)
-10
-10
-15
-30
-40
-50
-60
5
-70
-20
-80
25
30
35
40
20
25
FREQUENCY (GHz)
35
40
FREQUENCY (GHz)
Return Loss@ LO = +14 dBm
Conversion Gain vs. LO Drive
0
0
-5
+12 dBm
+14 dBm
+10 dBm
-10
RETURN LOSS (dB)
CONVERSION GAIN (dB)
30
MIXERS - CHIP
20
-15
-5
-10
LO
RF
+8 dBm
+16 dBm
-20
-15
20
25
30
35
40
0
5
10
FREQUENCY (GHz)
15
20
25
30
35
40
FREQUENCY (GHz)
Upconverter Performance
Conversion Gain @ LO = +14 dBm
IF Bandwidth @ LO = +14 dBm
0
0
RETURN LOSS
CONVERSION GAIN (dB)
CONVERSION GAIN
RESPONSE (dB)
-5
-10
-15
-20
-5
-10
-15
-20
0
1
2
3
FREQUENCY (GHz)
4
5
20
25
30
35
40
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Input IP3 vs.
Temperature @ LO = +14 dBm *
Input IP3 vs. LO Drive *
30
30
+12 dBm
+14 dBm
+16 dBm
20
15
5
-55C
+25C
+85C
25
IP3 (dBm)
IP3 (dBm)
25
20
15
10
10
20
25
30
35
40
20
25
30
35
Input IP2 vs.
Temperature @ LO = +14 dBm *
95
95
-55C
+25C
+85C
+12 dBm
+14 dBm
+16 dBm
90
IP2 (dBm)
90
85
85
80
80
20
25
30
35
40
20
25
FREQUENCY (GHz)
30
40
MxN Spurious Outputs
as a Down Converter
15
nLO
14
mRF
13
+25C
-55C
+85C
12
P1dB (dBm)
35
FREQUENCY (GHz)
Input P1dB vs.
Temperature @ LO = +14 dBm
±5
±4
±3
44
61
±2
±1
11
10
-2
71
-1
71
9
0
35
5
8
1
x
61
7
2
6
3
25
30
35
0
-3
5
40
FREQUENCY (GHz)
75
85
RF = 30.5 GHz @ -10 dBm
LO = 14 GHz @ +14 dBm
All values in dBc below IF output power level.
* Two-tone input power = -10 dBm each tone, 1 MHz spacing.
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40
FREQUENCY (GHz)
Input IP2 vs. LO Drive *
IP2 (dBm)
MIXERS - CHIP
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
26
HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Absolute Maximum Ratings
RF / IF Input
+13 dBm
LO Drive
+27 dBm
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
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/"3%26%(!.$,).'02%#!54)/.3
MIXERS - CHIP
5
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
WP-8
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
3. TYPICAL BOND PAD IS .004” SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 97
HMC330
v01.0301
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
MIXERS - CHIP
5
3 mil Ribbon Bond
Microstrip substrates should be brought as close to the die as possible in order
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
3 mil Ribbon Bond
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v01.0301
HMC330
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 25 - 40 GHz
Notes:
MIXERS - CHIP
5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 99