MICROWAVE CORPORATION HMC258 v01.0801 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Typical Applications Features The HMC258 is ideal for: Integrated LO Amplifier: 0dBm Drive • Microwave Pt to Pt Radios Sub-Harmonically Pumped (x2) LO • VSAT High 2LO/RF Isolation: 40 dB • SATCOM Small Size: 0.8mm x 1.1mm Functional Diagram General Description The HMC258 chip is a compact sub-harmonically pumped (x2) single ended MMIC mixer with an integrated LO amplifier which can be used as an upconverter or downconverter. The chip utilizes a GaAs MESFET technology that results in a small overall chip area of 0.9mm2. The 2LO to RF isolation is excellent eliminating the need for additional filtering. The LO amplifier is a single bias (+5V) two stage design with only 0dBm drive requirement. A less stringent oscillator design is made possible by the low LO drive and sub-harmonic nature of the chip. All data is with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils). MIXERS - CHIP 5 Electrical Specifications, TA = +25° C, LO Drive = 0 dBm IF = 1 GHz Vdd = +5.0V Parameter Min. Max. Min. Typ. Units Max. Frequency Range, RF 14 - 21 17 - 20 GHz Frequency Range, LO 7 - 10.5 8.5 - 10 GHz Frequency Range, IF DC - 3 DC - 3 GHz Conversion Loss 10 13.5 9.5 12 dB Noise Figure (SSB) 10 13.5 9.5 12 dB 2LO to RF Isolation 30 40 34 40 dB 2LO to IF Isolation 30 40 ~ 50 38 40 ~ 50 dB IP3 (Input) 0 7 0 7 dBm 1 dB Compression (Input) -5 0 -4 1 dBm 50 mA Supply Current (Idd) 5 - 38 Typ. IF = 1 GHz Vdd = +5.0V 50 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC258 v01.0801 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Conversion Gain vs. Temperature @ LO = 0 dBm Isolation @ LO = 0 dBm 0 0 LO/RF +25 C -5 -10 ISOLATION (dB) CONVERSION GAIN (dB) -55 C -10 -15 LO/IF -20 RF/IF 2LO/RF -30 -40 +85 C -20 -50 2LO/IF -25 -60 14 15 16 17 18 19 20 21 22 23 13 14 15 16 RF FREQUENCY (GHz) Conversion Gain vs. LO Drive 18 19 20 21 22 23 20 22 Return Loss @ LO = 0 dBm 0 0 0 dBm +2 dBm -5 +4 dBm -5 RETURN LOSS (dB) CONVERSION GAIN (dB) 17 RF FREQUENCY (GHz) -10 -15 -2 dBm -4 dBm -10 LO -15 -20 RF -25 IF -30 -20 -35 -25 -40 13 14 15 16 17 18 19 20 21 22 23 0 2 4 6 8 RF FREQUENCY (GHz) 10 12 14 16 18 FREQUENCY (GHz) Upconverter Performance Conversion Gain vs. LO Drive IF Bandwidth @ LO = 0 dBm 0 0 -5 -5 0 dBm CONVERSION GAIN (dB) IF CONVERSION GAIN (dB) 5 MIXERS - CHIP 13 -10 -15 -20 -10 -15 -20 -4 dBm -25 +4 dBm +2 dBm -2 dBm -25 0 1 2 3 4 IF FREQUENCY (GHz) 5 6 13 14 15 16 17 18 19 20 21 22 23 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 39 HMC258 v01.0801 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Input IP3 vs. Temperature @ LO = 0 dBm Input IP3 vs. LO Drive +2 dBm 15 10 5 0 -2 dBm 0 dBm -5 -10 5 -55 C 15 10 5 0 +85 C 14 15 16 17 18 19 20 21 22 23 13 14 15 RF FREQUENCY (GHz) 18 19 20 21 22 23 SECOND ORDER INTERCEPT (dBm) 60 55 +2 dBm 50 45 0 dBm 40 35 30 -2 dBm 25 20 55 -55 C 50 45 +25 C 40 35 +85 C 30 25 20 13 14 15 16 17 18 19 20 21 22 23 13 14 15 RF FREQUENCY (GHz) ±5 ±4 17 18 19 20 21 22 23 P1dB vs. Temperature @ LO = 0 dBm nLO mRF 16 RF FREQUENCY (GHz) MxN Spurious Outputs @ LO Drive = 0 dBm ±3 6 ±2 ±1 0 4 -3 -55 C -44 -1 -57 -18 -52 -9 1 -52 P1dB (dBm) +25C -2 0 -30 -56 -26 +20 X -46 -2 2 0 -2 +85 C -49 -4 13 RF = 18 GHz @ -10 dBm LO = 8.5 GHz @ 0 dBm All values in dBc below the IF power level 5 - 40 17 Input IP2 vs. Temperature @ LO = 0 dBm 60 3 16 RF FREQUENCY (GHz) Input IP2 vs. LO Drive 2 +25 C -5 -10 13 SECOND ORDER INTERCEPT (dBm) MIXERS - CHIP 20 THIRD ORDER INTERCEPT (dBm) THIRD ORDER INTERCEPT (dBm) 20 14 15 16 17 18 19 20 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 21 22 23 HMC258 v01.0801 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Absolute Maximum Ratings RF / IF Input (Vdd = +5V) +13 dBm LO Drive (Vdd = +5V) +13 dBm Vdd +10 Vdc Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C NOTE: A 100pF single layer chip bypass capacitor is recommended on the Vdd port no further than 0.762mm (30 mils) from the HMC258 5 MIXERS - CHIP Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. BOND PADS ARE .004” SQUARE. 3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006”. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 41 HMC258 v01.0801 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz MIC Assembly Techniques MIXERS - CHIP 5 Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutuctically or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. The photo in figure 3 shows a typical assembly for the HMC258 MMIC chip. 5 - 42 Figure 3: Typical HMC258 Assembly For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC258 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 MIXERS - CHIP Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. 5 - 43